IRFPS40N60KPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFPS40N60KPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95702
SMPS MOSFET
IRFPS40N60KPbF
HEXFET® Power MOSFET
Applications
l Hard Switching Primary or PFC Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
VDSS
600V
RDS(on) typ.
ID
40A
0.110 Ω
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
Parameter
SUPER TO-247AC
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
40
24
A
160
PD @TC = 25°C
Power Dissipation
570
W
W/°C
V
Linear Derating Factor
4.5
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
5.5
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
300
°C
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
600
40
Units
mJ
–––
–––
–––
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
57
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
Max.
0.22
–––
40
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
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1
9/10/04
IRFPS40N60KPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
600 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 0.110 0.130
3.0 ––– 5.0
Ω
V
VGS = 10V, ID = 24A
VDS = VGS, ID = 250µA
––– ––– 50
––– ––– 250
––– ––– 100
––– ––– -100
V
DS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
GS = 30V
VGS = -30V
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
21 ––– –––
Conditions
VDS = 50V, ID = 24A
ID = 38A
S
Qg
––– ––– 330
––– ––– 84
––– ––– 150
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 480V
VGS = 10V, See Fig. 6 and 13
–––
47 –––
VDD = 300V
––– 110 –––
ID = 38A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
97 –––
60 –––
RG = 4.3Ω
VGS = 10V,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 7970 –––
––– 750 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
75 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V ꢀ
––– 9440 –––
––– 200 –––
––– 260 –––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
––– ––– 40
MOSFET symbol
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
––– ––– 160
integral reverse
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
––– ––– 1.5
––– 630 950
––– 730 1090
V
TJ = 25°C, IS = 38A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF = 38A
ns
Reverse Recovery Time
Reverse Recovery Charge
di/dt = 100A/µs
––– 14
––– 17
––– 39
20
25
58
µC
A
Qrr
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See Fig. 11)
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 0.84mH, RG = 25Ω,
as Coss while VDS is rising from 0 to 80% VDSS
IAS = 38A, dv/dt =5.5V/ns (See Figure 12a)
ISD ≤ 38A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
2
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IRFPS40N60KPbF
1000
100
10
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
1
4.5V
0.1
4.5V
0.01
0.001
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
1000
38A
=
I
D
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
°
T = 150
C
J
°
C
T = 25
J
1
0.1
0.01
V
= 50V
DS
V
= 10V
GS
20µs PULSE WIDTH
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
4
6
8
10
11 13
15
T , Junction Temperature
(
C)
V
, Gate-to-Source Voltage (V)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFPS40N60KPbF
100000
12
10
7
D
I
= 38A
V
= 0V,
f = 1 MHZ
V
V
V
= 480V
= 300V
= 120V
GS
iss
rss
oss
DS
DS
DS
C
C
C
= C + C
,
C
SHORTED
gs
gd
ds
= C
gd
= C + C
ds
gd
10000
1000
100
Ciss
Coss
Crss
5
2
0
10
0
50
Q
100
150
200
250
1
10
100
1000
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
100µsec
1msec
T = 150
J
C
°
C
T = 25
J
1
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.2
0.6
0.9
1.3
1.6
1
10
100
1000
10000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFPS40N60KPbF
RD
40
30
20
10
0
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
C)
, Case Temperature
(
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFPS40N60KPbF
1200
5.0
4.5
4.0
3.5
3.0
2.5
2.0
I
D
TOP
17A
24A
38A
960
BOTTOM
I
= 250µA
720
480
240
0
D
25
50
75
100
125
C)
150
-75 -50 -25
0
25
50
75 100 125 150
°
(
Starting Tj, Junction Temperature
T
, Temperature ( °C )
J
Fig 12a. Maximum Avalanche Energy
Fig 14. Threshold Voltage Vs. Temperature
Vs. Drain Current
15V
V
(BR)DSS
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01Ω
t
p
I
AS
Fig 12d. Unclamped Inductive Waveforms
Fig 12c. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
VGS
V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Basic Gate Charge Waveform
Fig 13a. Gate Charge Test Circuit
6
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IRFPS40N60KPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFPS40N60KPbF
Case Outline and Dimensions — Super-247
Super-247 (TO-274AA) Part Marking Information
E X A M P LE : T H IS IS A N IR F P S 3 7N 5 0A W IT H
A S S E M B L Y LO T C O D E 17 89
A S S E M B LE D O N W W 1 9, 19 97
IN T H E A S S E M B LY L IN E "C "
P A R T N U M B E R
IN T E R N A T IO N A L R E C T IF IE R
L O G O
IR FP S 37N 50A
719C
17
89
D A T E C O D E
Y E A R 7 = 19 97
W E E K 1 9
LIN E C
A S S E M B L Y L O T C O D E
N ote: "P " in a sse m bly line p osition
ind icate s "Le ad-F ree "
T O P
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
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