IRFPS60N50C [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	IRFPS60N50C
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET 晶体晶体管开关脉冲局域网
文件：	总3页 (文件大小：55K)
中文：	中文翻译
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PD- 93932

PROVISIONAL

IRFPS60N50C

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

V_DSS

500V

R_DS(on)typ.

I_D

60A

l Switch Mode Power Supply (SMPS)

l UninterruptIble Power Supply

l High Speed Power Switching

0.038Ω

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

Super-247™

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

240

P_D@T_C= 25°C

Power Dissipation

390

W/°C

Linear Derating Factor

3.1

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case )

300

°C

Recommended clip force

Avalanche Characteristics

Symbol

E_AS

Parameter

Single Pulse Avalanche Energy

Typ.

Max.

600

Units

–––

I_AR

Avalanche Current

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Typ.

–––

Max.

0.32

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.24

–––

°C/W

www.irf.com

6/2/00

IRFPS60N50C

PROVISIONAL

Static @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

500 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– 0.68 ––– V/°C Reference to 25°C, I_D= 1mA

R_DS(on)

V_GS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– 0.038 0.043

3.5 ––– 5.5

Ω

V_GS= 10V, I_D= 36A

V_DS= V_GS, I_D= 250µA

V_DS= 500V, V_GS= 0V

V_DS= 400V, V_GS= 0V, T_J= 125°C

V_GS= 20V

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

µA

I_DSS

I_GSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

V_GS= -20V

Dynamic @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

34 ––– –––

––– 330 –––

––– 77 –––

––– 160 –––

Conditions

V_DS= 50V, I_D= 36A

I_D= 36A

g_fs

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 400V

V_GS= 10V,

V_DD= 250V

–––

39 –––

49 –––

94 –––

11 –––

I_D= 36A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 1.3Ω

V_GS= 10V,

V_GS= 0V

C_iss

C_oss

C_rss

C_oss

C_osseff.

Input Capacitance

––– 10760 –––

––– 6120 –––

––– 240 –––

––– 25760 –––

––– 240 –––

––– 780 –––

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

V_DS= 25V

ƒ = 1.0MHz

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 400V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 0V to 400V ꢀ

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

(Body Diode)

MOSFET symbol

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

––– ––– 240

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– 1.5

––– 920 1380

T_J= 25°C, I_S= 36A, V_GS= 0V

T_J= 125°C, I_F= 36A

Q_rr

t_on

––– 20

µC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature.

Starting T_J= 25°C, L = 0.93mH, R_G= 25Ω,

I_AS= 36A,

I_SD≤ 36A, di/dt ≤ 42A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

www.irf.com

IRFPS60N50C

PROVISIONAL

Super-247™ Package Outline

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 6/00

www.irf.com

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