IRFR2405TRL [INFINEON]
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3;
| 型号： | IRFR2405TRL |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93861
IRFR2405
IRFU2405
HEXFET® Power MOSFET
l Surface Mount (IRFR2405)
l Straight Lead (IRFU2405)
l Advanced Process Technology
l Dynamic dv/dt Rating
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.016Ω
G
l Fully Avalanche Rated
Description
ID = 56A
Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
S
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D-Pak
IRFR2405
I-Pak
IRFU2405
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
56
40
220
110
0.71
± 20
130
34
A
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
11
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.4
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
110
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
3/1/00
IRFR/U2405
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 0.0118 0.016
Ω
V
S
VGS = 10V, ID = 34A
VDS = 10V, ID = 250µA
VDS = 25V, ID = 34A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
2.0
30
––– 4.0
––– –––
Forward Transconductance
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
–––
–––
–––
–––
70 110
ID = 34A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
16
19
23
29
nC VDS = 44V
VGS = 10V
VDD = 28V
15 –––
––– 130 –––
ID = 34A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
55 –––
78 –––
RG = 6.8Ω
VGS = 10V
D
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
6mm (0.25in.)
nH
G
from package
–––
7.5
and center of die contact
S
Ciss
Input Capacitance
––– 2430 –––
––– 470 –––
––– 100 –––
––– 2040 –––
––– 350 –––
––– 350 –––
VGS = 0V
Coss
Output Capacitance
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
––– –––
––– –––
56
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
220
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 62 93
––– 170 260
V
TJ = 25°C, IS = 34A, VGS = 0V
ns
TJ = 25°C, IF = 34A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 0.22mH
RG = 25Ω, IAS = 34A.
as Coss while VDS is rising from 0 to 80% VDSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
ISD ≤ 34A, di/dt ≤ 190A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
2
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IRFR/U2405
1000
100
10
1000
100
10
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
20µs PULSE WIDTH
°
°
J
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
56A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
100
V
= 25V
DS
20µs PULSE WIDTH
V
= 10V
GS
10
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5.0
V
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFR/U2405
20
16
12
8
4000
I
D
= 34A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 44V
= 27V
= 11V
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
3200
2400
1600
800
0
oss
ds
C
iss
4
C
C
oss
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100
10
1
°
T = 175 C
J
100us
°
T = 25 C
J
1ms
°
T = 25 C
10ms
C
J
°
T = 175 C
V
= 0 V
GS
2.0
Single Pulse
1
0.4
0.8
1.2
1.6
2.4
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U2405
RD
60
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U2405
240
200
160
120
80
1 5V
I
D
TOP
14A
24A
34A
BOTTOM
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
40
V
(BR)DSS
0
25
50
75
100
125
150
175
t
p
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Q
G
Same Type as D.U.T.
50KΩ
.2µF
Q
Q
GD
12V
GS
.3µF
+
V
DS
D.U.T.
-
V
G
V
GS
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFR/U2405
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFR/U2405
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.09 4)
2.19 (.08 6)
6.73 (.265 )
6.35 (.250 )
1.14 (.045)
0.89 (.035)
- A
-
1.27 (.050 )
0.88 (.035 )
5 .46 (.215 )
5 .21 (.205 )
0.58 (.02 3)
0.46 (.01 8)
4
6.4 5 (.2 45)
5.6 8 (.2 24)
6.2 2 (.2 45)
5.9 7 (.2 35)
10 .42 (.4 10 )
9.40 (.37 0)
1.02 (.04 0)
1.64 (.02 5)
LE AD A SS IG N M E NTS
1 - G A TE
1
2
3
2 - D R A IN
0 .51 (.02 0)
M IN.
- B
-
3 - S O U R CE
4 - D R A IN
1 .5 2 (.06 0)
1 .1 5 (.04 5)
0.89 (.035 )
0.64 (.025 )
3X
0 .5 8 (.0 23)
0 .4 6 (.0 18)
1.1 4 (.0 45)
0.7 6 (.0 30)
2X
0.25 (.01 0)
M
A M B
N O TE S :
2.28 (.09 0)
1
2
3
4
D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5 M , 1 982 .
C O N TR O LL ING D IM EN SIO N : IN C H .
4 .57 (.18 0)
C O N FO R M S TO JE D E C O U TLIN E TO -252 AA .
D IM E N S IO N S SH O W N A R E B EF O R E S O LD ER D IP ,
S O LD ER D IP M A X. +0.16 (.0 06).
D-Pak (TO-252AA) Part Marking Information
8
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IRFR/U2405
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .73 (.26 5)
6 .35 (.25 0)
2.38 (.094)
2.19 (.086)
- A
-
0.58 (.023)
0.46 (.018)
1.27 (.050)
0.88 (.035)
5 .4 6 (.21 5)
5 .2 1 (.20 5)
L EAD A SSIG N M EN TS
1 - G ATE
4
2 - D RA IN
6.4 5 (.245)
5.6 8 (.224)
3 - SO U R C E
4 - D RA IN
6 .22 (.2 45)
5 .97 (.2 35)
1.52 (.060)
1.15 (.045)
1
2
3
- B
-
N O TE S:
1
2
3
4
D IM EN SIO N IN G
&
TO LER AN C IN G P ER AN SI Y14.5M , 198 2.
2.28 (.0 90)
1.91 (.0 75)
9.65 (.380)
8.89 (.350)
C O NTR OL LIN G D IM EN SIO N : IN C H .
C O NF O R MS TO JEDE C O UTLINE TO -25 2AA.
D IM EN SIO N S S HO W N A R E BE FO RE SO L DE R D IP,
SO LDE R DIP M AX. +0.16 (.006).
1.14 (.045 )
0.76 (.030 )
1 .14 (.04 5)
0 .89 (.03 5)
3X
0.89 (.0 35)
0.64 (.0 25)
3X
0.25 (.010 )
M
A M B
0.58 (.023)
0.46 (.018)
2.28 (.09 0)
2X
I-Pak (TO-251AA) Part Marking Information
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9
IRFR/U2405
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TR L
T RR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIR ECTIO N
FEED DIR ECTIO N
N O TES :
1. C O NTRO LLING D IM ENSIO N : M ILLIM ETER.
2. ALL DIM EN SION S ARE SH O W N IN M ILLIM ETERS ( INCHES ).
3. O U TLINE CO NFO RM S TO EIA-481 & EIA-541.
13 INCH
16 m m
NO TES :
1. O UTLINE CO NFO RM S TO EIA-481.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 3/00
10
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相关型号：
IRFR2405TRR
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
INFINEON
IRFR2407TRLPBF
Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
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