IRFR3708TRLPBF [INFINEON]
Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
| 型号： | IRFR3708TRLPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93935B
IRFR3708
IRFU3708
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
VDSS
30V
RDS(on) max
ID
61A
12.5mΩ
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
D-Pak
IRFR3708
I-Pak
IRFU3708
and Current
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
30
V
V
VGS
Gate-to-Source Voltage
± 12
61
51
244
87
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
W
61
0.58
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 175
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.73
50
Units
RθJC
RθJA
RθJA
–––
–––
–––
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
110
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 9
www.irf.com
1
8/22/00
IRFR/U3708
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.6
8.5
12.5
VGS = 10V, ID = 15A
RDS(on)
Static Drain-to-Source On-Resistance
10.0 14.0 mΩ VGS = 4.5V, ID = 12A
15.0 30.0
VGS = 2.8V, ID = 7.5A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS(th)
IDSS
Gate Threshold Voltage
–––
–––
–––
–––
–––
2.0
20
V
–––
–––
–––
–––
µA
Drain-to-Source Leakage Current
100
200
-200
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
IGSS
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 15V, ID = 50A
ID = 24.8A
49
––– –––
24 –––
6.7 –––
5.8 –––
S
Qg
–––
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 15V
VGS = 4.5V
14
21
VGS = 0V, ID = 24.8A, VDS = 15V
VDD = 15V
7.2 –––
50 –––
ID = 24.8A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 17.6 –––
––– 3.7 –––
RG = 0.6Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2417 –––
––– 707 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V
–––
52 –––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
213
62
Units
mJ
A
IAR
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
––– –––
––– –––
61
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
244
S
––– 0.88 1.3
––– 0.80 –––
V
TJ = 25°C, IS = 31A, VGS = 0V
TJ = 125°C, IS = 31A, VGS = 0V
TJ = 25°C, IF = 31A, VR=20V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 41
––– 64
––– 43
62
96
65
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 31A, VR=20V
nC di/dt = 100A/µs
Qrr
––– 70 105
2
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IRFR/U3708
1000
100
10
1000
100
10
VGS
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
VGS
TOP
TOP
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
61A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
V
= 15V
20µs PULSE WIDTH
DS
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
2.0
3.0
4.0
5.0 6.0
°
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFR/U3708
3500
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 24.8A
GS
C
V
= 15V
= C + C
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
2800
2100
1400
700
0
oss
ds
C
iss
6
4
C
oss
rss
2
C
0
1
10
100
0
10
Q
20
30
40
50
V
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
10us
T = 175 C
J
°
T = 25 C
J
100us
1ms
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.1
0.8
1.4
2.0
2.6
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFR/U3708
RD
70
60
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U3708
0.025
0.017
0.015
0.013
0.011
0.009
0.007
0.020
0.015
VGS = 4.5V
I
= 31A
0.010
0.005
D
VGS = 10V
200
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0 10.0
0
50
100
150
250
300
V
Gate -to -Source Voltage (V)
I
, Drain Current ( A )
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
600
DS
D.U.T.
-
V
I
G
D
10A
V
GS
TOP
3mA
Charge
20.7A
BOTTOM 24.8A
480
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Gate Charge Test Circuit
360
240
120
0
and Waveform
15V
V
(B R )D S S
DRIVER
L
t
p
V
DS
D.U.T
R
+
G
V
DD
-
25
50
75
100
125
150
175
I
AS
20 V
°
Starting T , Junction Temperature ( C)
J
0.01
t
Ω
p
I
A S
Fig 15a&b. Unclamped Inductive Test circuit
Fig 15c. Maximum Avalanche Energy
and Waveforms
Vs. Drain Current
6
www.irf.com
IRFR/U3708
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.09 4)
2.19 (.08 6)
6.73 (.265 )
6.35 (.250 )
1.14 (.045)
0.89 (.035)
- A
-
1.27 (.050 )
0.88 (.035 )
5 .46 (.215 )
5 .21 (.205 )
0.58 (.02 3)
0.46 (.01 8)
4
6.4 5 (.2 45)
5.6 8 (.2 24)
6.2 2 (.2 45)
5.9 7 (.2 35)
10 .42 (.4 10 )
9.40 (.37 0)
1.02 (.04 0)
1.64 (.02 5)
LE AD A SS IG N M E NTS
1 - G A TE
1
2
3
2 - D R A IN
0 .51 (.02 0)
M IN.
- B
-
3 - S O U R CE
4 - D R A IN
1 .5 2 (.06 0)
1 .1 5 (.04 5)
0.89 (.035 )
0.64 (.025 )
3X
0 .5 8 (.0 23)
0 .4 6 (.0 18)
1.1 4 (.0 45)
0.7 6 (.0 30)
2X
0.25 (.01 0)
M
A M B
N O TE S :
2.28 (.09 0)
1
2
3
4
D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5 M , 1 982 .
C O N TR O LL ING D IM EN SIO N : IN C H .
4 .57 (.18 0)
C O N FO R MS TO JE D E C O U TLIN E TO -252 AA .
D IM E N S IO N S SH O W N A R E B EF O R E S O LD ER D IP ,
S O LD ER D IP M A X. +0.16 (.0 06).
D-Pak (TO-252AA) Part Marking Information
www.irf.com
7
IRFR/U3708
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .73 (.26 5)
6 .35 (.25 0)
2.38 (.094)
2.19 (.086)
- A
-
0.58 (.023)
0.46 (.018)
1.27 (.050)
0.88 (.035)
5 .4 6 (.21 5)
5 .2 1 (.20 5)
L EAD A SSIG N MEN TS
1 - G ATE
4
2 - D RA IN
6.4 5 (.245)
5.6 8 (.224)
3 - SO U R C E
4 - D RA IN
6 .22 (.2 45)
5 .97 (.2 35)
1.52 (.060)
1.15 (.045)
1
2
3
- B
-
N O TE S:
1
2
3
4
D IM EN SIO N IN G & TO LER AN C IN G P ER AN SI Y14.5M , 198 2.
C O NTR OL LIN G D IM EN SIO N : IN C H .
2.28 (.0 90)
1.91 (.0 75)
9.65 (.380)
8.89 (.350)
C O NF O R MS TO JEDE C O UTLINE TO -25 2AA.
D IM EN SIO N S S HO W N A R E BE FO RE SO L DE R D IP,
SO LDE R DIP M AX. +0.16 (.006).
1.14 (.045 )
0.76 (.030 )
1 .14 (.04 5)
0 .89 (.03 5)
3X
0.89 (.0 35)
0.64 (.0 25)
3X
0.25 (.010 )
M
A M B
0.58 (.023)
0.46 (.018)
2.28 (.09 0)
2X
I-Pak (TO-251AA) Part Marking Information
8
www.irf.com
IRFR/U3708
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TR L
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIR ECTIO N
N O TES :
1. CO NTRO LLING DIMEN SIO N : MILLIMETER.
2. ALL D IM EN SIO N S ARE SH O W N IN M ILLIM ETERS ( IN CHES ).
3. O UTLINE C O NFO RMS TO EIA-481 & EIA-541.
13 INC H
16 m m
NO TES :
1. OU TLINE CO NFO RM S TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Calculated continuous current based on maximum allowable
Starting TJ = 25°C, L = 0.7 mH
RG = 25Ω, IAS = 24.8 A.
junction temperature. Package limitation current is 30A.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 8/00
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9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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