IRFR3711ZTRLPBF [INFINEON]
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| 型号： | IRFR3711ZTRLPBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 晶体 晶体管 功率场效应晶体管 开关 脉冲 |
| 文件： | 总10页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 94061
IRFR3711
IRFU3711
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
VDSS
20V
RDS(on) max
ID
110A
6.5mΩ
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
Benefits
l Ultra-Low Gate Impedance
D-Pak
IRFR3711
I-Pak
IRFU3711
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-to-Source Voltage
± 20
110
69
440
V
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TA = 25°C
PD @TC = 25°C
Maximum Power Dissipationꢀ
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
120
0.96
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.04
50
Units
RθJC
RθJA
RθJA
–––
–––
–––
Junction-to-Ambient (PCB mount)ꢀ
Junction-to-Ambient
°C/W
110
Notes through are on page 10
www.irf.com
1
2/7/01
IRFR/U3711
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
1.0
5.2
6.7
6.5
8.5
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 16V
mΩ
V
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 3.0
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 16V, ID = 30A
ID = 15A
53
––– –––
29 44
S
Qg
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
7.3 –––
8.9 –––
33 –––
12 –––
nC VDS = 10V
VGS = 4.5V
VGS = 0V, VDS = 10V
VDD = 10V
––– 220 –––
ID = 30A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
17 –––
12 –––
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2980 –––
––– 1770 –––
––– 280 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
460
Units
mJ
IAR
Avalanche Current
–––
30
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
––– –––
––– –––
110
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
440
S
––– 0.88 1.3
––– 0.82 –––
V
TJ = 25°C, IS = 30A, VGS = 0V
VSD
Diode Forward Voltage
TJ = 125°C, IS = 30A, VGS = 0V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 50
––– 61
––– 48
––– 65
75
92
72
98
ns
TJ = 25°C, IF = 16A, VR=10V
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 16A, VR=10V
nC di/dt = 100A/µs
Qrr
2
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IRFR/U3711
1000
100
10
1000
100
10
VGS
15V
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
TOP
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
°
°
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
110A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
100
V
= 25V
DS
V
=10V
GS
20µs PULSE WIDTH
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
V
4.0
5.0
6.0 7.0 8.0
T , Junction Temperature ( C)
J
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFR/U3711
10
8
I
D
=
30A
100000
V
= 0V,
f = 1 MHZ
V
V
= 16V
= 10V
GS
DS
DS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
6
Ciss
Coss
4
Crss
2
1
10
, Drain-to-Source Voltage (V)
100
0
0
10
Q
20
30
40
50
V
DS
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100µsec
1msec
°
T = 25 C
J
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
1
0.1
0.2
0.8
1.4
2.0
2.6
1
10
, Drain-toSource Voltage (V)
100
V
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U3711
RD
120
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
0.01
t
1
t
0.02
0.01
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U3711
1400
1200
1000
800
600
400
200
0
I
15V
D
TOP
13A
19A
30A
BOTTOM
D RIVER
L
V
DS
D.U .T
R
+
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFR/U3711
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFR/U3711
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.09 4)
2.19 (.08 6)
6.73 (.265 )
6.35 (.250 )
1.14 (.045)
0.89 (.035)
- A
-
1.27 (.050 )
0.88 (.035 )
5 .46 (.215 )
5 .21 (.205 )
0.58 (.02 3)
0.46 (.01 8)
4
6.4 5 (.2 45)
5.6 8 (.2 24)
6.2 2 (.2 45)
5.9 7 (.2 35)
10 .42 (.4 10 )
9.40 (.37 0)
1.02 (.04 0)
1.64 (.02 5)
LE AD A SS IG N M E NTS
1 - G A TE
1
2
3
2 - D R A IN
0 .51 (.02 0)
M IN.
- B
-
3 - S O U R CE
4 - D R A IN
1 .5 2 (.06 0)
1 .1 5 (.04 5)
0.89 (.035 )
0.64 (.025 )
3X
0 .5 8 (.0 23)
0 .4 6 (.0 18)
1.1 4 (.0 45)
0.7 6 (.0 30)
2X
0.25 (.01 0)
M
A M B
N O TE S :
2.28 (.09 0)
1
2
3
4
D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5 M , 1 982 .
C O N TR O LL ING D IM EN SIO N : IN C H .
4 .57 (.18 0)
C O N FO R M S TO JE D E C O U TLIN E TO -252 AA .
D IM E N S IO N S SH O W N A R E B EF O R E S O LD ER D IP ,
S O LD ER D IP M A X. +0.16 (.0 06).
D-Pak (TO-252AA) Part Marking Information
8
www.irf.com
IRFR/U3711
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .73 (.26 5)
6 .35 (.25 0)
2.38 (.094)
2.19 (.086)
- A
-
0.58 (.023)
0.46 (.018)
1.27 (.050)
0.88 (.035)
5 .4 6 (.21 5)
5 .2 1 (.20 5)
L EAD A SSIG N M EN TS
1 - G ATE
4
2 - D RA IN
6.4 5 (.245)
5.6 8 (.224)
3 - SO U R C E
4 - D RA IN
6 .22 (.2 45)
5 .97 (.2 35)
1.52 (.060)
1.15 (.045)
1
2
3
- B
-
N O TE S:
1
2
3
4
D IM EN SIO N IN G & TO LER AN C IN G P ER AN SI Y14.5M , 198 2.
C O NTR OL LIN G D IM EN SIO N : IN C H .
2.28 (.0 90)
1.91 (.0 75)
9.65 (.380)
8.89 (.350)
C O NF O R MS TO JEDE C O UTLINE TO -25 2AA.
D IM EN SIO N S S HO W N A R E BE FO RE SO L DE R D IP,
SO LDE R DIP M AX. +0.16 (.006).
1.14 (.045 )
0.76 (.030 )
1 .14 (.04 5)
0 .89 (.03 5)
3X
0.89 (.0 35)
0.64 (.0 25)
3X
0.25 (.010 )
M
A M B
0.58 (.023)
0.46 (.018)
2.28 (.09 0)
2X
I-Pak (TO-251AA) Part Marking Information
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9
IRFR/U3711
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IRECTIO N
FEED DIR ECTION
N O TES
:
1. CO NTRO LLING D IMENSIO N : M ILLIM ETER.
2. ALL D IM EN SION S ARE SHO W N IN M ILLIM ETERS ( INCHES ).
3. OU TLINE C ON FO RMS TO EIA-481 & EIA-541.
13 INCH
16 m m
NO TES :
1. OU TLINE CON FO RMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
Calculated continuous current based on maximum allowable
Starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 30A.
junction temperature. Package limitation current is 30A.
ꢀWhen mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/01
10
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