IRFR3911PBF [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRFR3911PBF |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总10页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95373A
IRFR3911PbF
SMPS MOSFET
IRFU3911PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
100V
RDS(on) max
ID
14A
0.115Ω
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3911
I-Pak
IRFU3911
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
14
9.5
56
A
PD @TC = 25°C
Power Dissipation
56
W
W/°C
V
Linear Derating Factor
0.37
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 20
Peak Diode Recovery dv/dt
Operating Junction and
7.1
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
RθJA
RθJA
Junction-to-Case
–––
–––
–––
2.7
50
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
110
Notes through ꢀare on page 10
www.irf.com
1
12/06/04
IRFR/U3911PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.115
2.0 ––– 4.0
Ω
V
VGS = 10V, ID = 8.4A
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
––– ––– 20
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 8.4A
ID = 8.4A
gfs
9.6
–––
–––
–––
–––
–––
–––
–––
––– –––
21 32
S
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
4.3 6.5
6.6 9.9
7.9 –––
26 –––
52 –––
25 –––
nC VDS = 80V
VGS = 10V
VDD = 500V
ID = 8.4A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 22Ω
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 740 –––
––– 110 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 700 –––
––– 61 –––
––– 130 –––
18 –––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
68
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
8.4
A
EAR
Repetitive Avalanche Energy
0.0056
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
14
56
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 86 –––
––– 290 –––
V
TJ = 25°C, IS = 8.4A, VGS = 0V
ns
TJ = 25°C, IF = 8.4A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFR/U3911PbF
100
10
1
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
5.0V
BOTTOM 4.5V
4.5V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
100.00
10.00
1.00
14A
=
I
D
T
= 25°C
J
2.5
2.0
1.5
1.0
0.5
0.0
T
= 175°C
J
V
= 15V
DS
20µs PULSE WIDTH
V
= 10V
GS
3.0
5.0
V
7.0
9.0
11.0
13.0
15.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
T , Junction Temperature
( C)
, Gate-to-Source Voltage (V)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFR/U3911PbF
12
10
7
10000
D
I
= 8.4A
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds gd
1000
100
10
Ciss
5
Coss
Crss
2
0
0
5
10
15
20
25
1
10
, Drain-to-Source Voltage (V)
100
Q
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0V
GS
0.1
0.10
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRFR/U3911PbF
RD
15
12
9
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
V
DS
90%
0
25
50
75
100
125
150
175
°
( C)
T
, Case Temperature
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
SINGLE PULSE
(THERMAL RESPONSE)
0.01
DM
0.02
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFR/U3911PbF
120
96
72
48
24
0
15V
I
D
TOP
3.4A
5.9A
8.4A
DRIVER
+
L
BOTTOM
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
( C)
Starting T , Junction Temperature
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRFR/U3911PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
IRFR/U3911PbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S EMBL Y
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 9 = 1999
WE EK 16
IRFU120
916A
ASS EMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in ass embly line position
AS S E MB L Y
LOT CODE
indicates "L ead-F ree"
OR
PART NUMBER
DATE CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WEE K 16
A = ASSEMBLYSITE CODE
8
www.irf.com
IRFR/U3911PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S EMBLY
DAT E CODE
YEAR 9 = 1999
WEEK 19
RECTIFIER
LOGO
IRFU120
919A
78
LOT CODE 5678
AS SEMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S E MB L Y
LOT CODE
Note: "P" in assembly line
position indicates "Lead-Free"
OR
PART NUMBER
DATE CODE
P = DE S I GNAT E S L E AD- F R E E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 9 = 1999
AS S E MB LY
LOT CODE
WEE K 19
A = AS S E MB L Y S IT E CODE
www.irf.com
9
IRFR/U3911PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 1.9mH
RG = 25Ω, IAS = 8.4A.
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 8.4A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
10
www.irf.com
相关型号：
IRFR3911TRLPBF
Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
IRFR3911TRPBF
Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
IRFR4104TR
Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
INFINEON
IRFR4104TRLPBF
Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明