IRFR8314 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;型号: | IRFR8314 |
厂家: | Infineon |
描述: | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
文件: | 总10页 (文件大小:549K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRFR8314PbF
HEXFET® Power MOSFET
Application
VDSS
30
V
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
RDS(on) max
(@ VGS = 10V)
2.2
m
(@ VGS = 4.5V)
Qg (typical)
3.1
40
nC
A
Benefits
ID (Silicon Limited)
ID (Package Limited)
179
90A
Fully Characterized Avalanche Voltage and Current
Lead-Free, RoHS Compliant
D
S
G
G
D
S
Gate
Drain
Source
Standard Pack
Base part number Package Type
IRFR8314PbF D-Pak
Orderable Part Number
Form
Quantity
Tape and Reel
2000
IRFR8314TRPbF
Absolute Maximum Rating
Symbol
Parameter
Max.
30
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
V
A
VGS
± 20
179
127
90
ID @ TC = 25°C
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
357
125
63
PD @TC = 25°C
Maximum Power Dissipation
W
W
W/°C
PD @TC = 100°C Maximum Power Dissipation
Linear Derating Factor
0.83
TJ
Operating Junction and
-55 to + 175
300
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
1.2
Units
Junction-to-Case
RJC
RJA
RJA
–––
–––
–––
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
°C/W
50
110
Notes through are on page 9
1
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IRFR8314PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
––– –––
V
VGS = 0V, ID = 250µA
–––
–––
–––
18
1.6
2.6
––– mV/°C Reference to 25°C, ID = 1mA
BVDSS/TJ
RDS(on)
2.2
3.1
VGS = 10V, ID = 90A
GS = 4.5V, ID = 72A
m
V
VGS(th)
Gate Threshold Voltage
1.2
1.7
2.2
V
VDS = VGS, ID = 100µA
Gate Threshold Voltage Coefficient
––– -7.0 ––– mV/°C
VGS(th)/TJ
––– –––
1.0
V
DS =24 V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
––– ––– 150
––– ––– 100
––– ––– -100
189 ––– –––
VDS =24V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
V
V
GS = 20V
GS = -20V
DS = 15V, ID =72A
IGSS
nA
S
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
36
10
7.7
10
8.3
20
2.0
19
98
54
Qgs1
Qgs2
Qgd
Qgodr
Qsw
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Gate Resistance
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 15V
nC VGS = 4.5V
ID = 72A
td(on)
tr
Turn-On Delay Time
VDD = 15V
ns ID = 72A
Rise Time
td(off)
Turn-Off Delay Time
–––
–––
28
30
–––
–––
RG= 1.8
tf
Fall Time
VGS = 4.5V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 4945 –––
––– 908 –––
––– 493 –––
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS (Thermally limited)
EAS (tested)
IA
180
279
72
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
A
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Continuous Source Current
(Body Diode)
IS
––– ––– 179
A
V
Pulsed Source Current
(Body Diode)
ISM
––– ––– 357
VSD
Diode Forward Voltage
––– –––
1.0
47
TJ = 25°C,IS = 72A,VGS = 0V
trr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
31
87
ns TJ = 25°C IF = 72A ,VDD=15V
Qrr
130 nC di/dt = 360A/µs
2
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IRFR8314PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
5.5V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
BOTTOM
BOTTOM
2.8V
2.8V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
I
= 90A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 15V
DS
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
T
GS
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14
V
= 0V,
= C
f = 1 MHZ
GS
I = 72A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
12
rss
oss
gd
V
V
= 24V
= 15V
= C + C
DS
DS
ds
gd
10
8
C
iss
6
C
oss
4
C
rss
2
100
0
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
V
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
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IRFR8314PbF
1000
100
10
100µsec
1msec
100
10
1
T
= 175°C
J
LIMITED BY PACKAGE
OPERATION IN THIS
AREA LIMITED BY R
T
= 25°C
(on)
J
DS
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
V
GS
= 0V
0.1
0.1
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
DS
V
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
2.5
2.0
1.5
1.0
0.5
0.0
200
180
Limited By Package
160
140
120
100
80
I
= 150µA
D
ID = 250µA
I
= 1.0mA
D
D
I
= 1.0A
60
40
20
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
25
50
75
100
125
150
175
T
T
, Case Temperature (°C)
J
C
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
10
1
0.1
0.01
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR8314PbF
8
6
4
2
0
800
700
600
500
400
300
200
100
0
I
I
= 90A
D
D
TOP
16A
33A
BOTTOM 72A
T
= 125°C
= 25°C
J
T
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
V
Gate -to -Source Voltage (V)
J
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. Typical On-Resistance vs. Gate Voltage
5
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IRFR8314PbF
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 15a. Unclamped Inductive Test Circuit
Fig 15b. Unclamped Inductive Waveforms
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
6
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IRFR8314PbF
D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 1 = 2001
WEEK 16
IRFR120
116A
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in assembly line position
ASSEMBLY
LOT CODE
indicates "Lead-Free"
"P" in assembly line position indicates
"Lead-Free" qualification to the consumer-level
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
OR
IRFR120
12 34
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO THE
CONSUMER LEVEL (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 1 = 2001
WEEK 16
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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IRFR8314PbF
D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFR8314PbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
D-Pak
MSL1
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is
90A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.07mH, RG = 50, IAS = 72A, VGS =10V.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ approximately 90°C.
This value determined from sample failure population, starting TJ =25°C,
L=0.07mH, RG = 50, IAS = 72A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Revision History
Date
Comments
07/01/2014
The Device is active without bulk part which is removed from Table on page 1
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact Internaꢀonal Recꢀfier, please visit hꢁp://www.irf.com/whoto‐call/
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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