IRFR9214TRLPBF [INFINEON]
Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
| 型号： | IRFR9214TRLPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95375A
IRFR/U9214PbF
HEXFET® Power MOSFET
D
l P-Channel
VDSS = -250V
l Surface Mount (IRFR9214)
l Straight Lead (IRFU9214)
l Advanced Process Technology
l Fast Switching
RDS(on) = 3.0Ω
G
l Fully Avalanche Rated
l Lead-Free
ID = -2.7A
S
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
D-Pak
I-Pak
TO-251AA
TO-252AA
The D-Pak is designed for surface mounting using vapor
phase, infrared, orwavesolderingtechniques. Thestraight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-2.7
-1.7
-11
A
PD @TC = 25°C
Power Dissipation
50
W
W/°C
V
Linear Derating Factor
0.40
± 20
100
-2.7
5.0
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
-5.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
260 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
2.5
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
50
°C/W
110
12/07/04
IRFR/U9214PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-250
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.25 V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance 3.0
Ω
V
S
VGS = -10V, ID = -1.7A
VDS = VGS, ID = -250µA
VDS = -50V, ID = -1.7A
VDS = -250V, VGS = 0V
VDS = -200V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
-2.0 -4.0
0.9
Forward Transconductance
-100
-500
100
-100
14
3.1
6.8
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -1.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = -200V
VGS = -10V, See Fig. 6 and 13
11
14
20
17
VDD = -125V
RiseTime
ID = -1.7A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG =21 Ω
RD =70 See Fig. 10
Between lead,
6mm (0.25in.)
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
nH
pF
G
from package
7.5
and center of die contactꢀ
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
220
Output Capacitance
75
11
VDS = -25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-2.7
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-11
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
-5.8
150 220
V
TJ = 25°C, IS = -2.7A, VGS = 0V
ns
TJ = 25°C, IF = -1.7A
Qrr
ton
870 1300 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 27mH
RG = 25Ω, IAS = -2.7A. (See Figure 12)
ISD ≤ -2.7A, di/dt ≤ 600A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀThis is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
,
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
IRFR/U9214PbF
10
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
TOP
BOTTOM -4.5V
BOTTOM -4.5V
1
1
-4.5V
-4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
10
-2.7A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
1
V
= -50V
DS
20µs PULSE WIDTH
V
=-10V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
4
5
6
7
8
9
10
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRFR/U9214PbF
20
16
12
8
400
I = -1.7 A
D
V
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
V
V
V
=-200V
=-125V
=-50V
iss
gs
gd ,
ds
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
300
200
100
0
C
C
iss
4
oss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
3
6
9
12
15
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
100us
1
1
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
1.0
10
100
1000
2.0
3.0
4.0
5.0
-V , Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFR/U9214PbF
RD
VDS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
2
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFR/U9214PbF
L
V
DS
200
160
120
80
I
D
TOP
-1.3A
-1.8A
BOTTOM -2.8A
D.U.T
AS
-
+
R
G
V
DD
A
I
DRIVER
-20V
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
40
I
AS
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFR/U9214PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
IRFR/U9214PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MB LY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 9 = 1999
WEE K 16
IRFU120
916A
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in assembly line position
AS S E MB L Y
LOT CODE
indicates "Lead-F ree"
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WE EK 16
A = AS S E MB L Y S IT E CODE
IRFR/U9214PbF
I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
WIT H AS S E MB L Y
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WE E K 19
IRFU120
919A
78
LOT CODE 5678
AS SEMBLED ON WW 19, 1999
56
IN THE AS SEMBLY LINE "A"
LINE A
AS S E MB L Y
LOT CODE
Note: "P" in assembly line
position indicates "Lead-Free"
OR
PART NUMBER
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56
78
YEAR 9 = 1999
AS S E MB LY
LOT CODE
WEEK 19
A = AS S E MB L Y S I T E CODE
IRFR/U9214PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
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