IRFS17N20DTRR [INFINEON]

Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SMD-220, D2PAK-3;


型号：	IRFS17N20DTRR
厂家：	Infineon
描述：	Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SMD-220, D2PAK-3 局域网开关脉冲晶体管
文件：	总12页 (文件大小：151K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD- 93902A

IRFB17N20D

IRFS17N20D

SMPS MOSFET

IRFSL17N20D

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

200V

R_DS(on)max

I_D

16A

0.17Ω

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

TO-262

TO-220AB

IRFB17N20D

IRFS17N20D

IRFSL17N20D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

140

Linear Derating Factor

0.90

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

2.7

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topologies

l Telecom 48V input Forward Converter

Notes through ꢀ are on page 11

www.irf.com

4/26/00

IRFB/IRFS/IRFSL17N20D

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

200 ––– –––

––– 0.25 ––– V/°C Reference to 25°C, I_D= 1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

R_DS(on)

V_GS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 0.17

3.0 ––– 5.5

Ω

V_GS= 10V, I_D= 9.8A

V_DS= V_GS, I_D= 250µA

V_DS= 200V, V_GS= 0V

V_DS= 160V, V_GS= 0V, T_J= 150°C

V_GS= 30V

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

I_GSS

V_GS= -30V

Dynamic @ T_J= 25°C (unless otherwise specified)

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

Conditions

V_DS= 50V, I_D= 9.8A

I_D= 9.8A

g_fs

5.3

–––

––– –––

Q_g

8.4

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 160V

V_GS= 10V,

11 –––

19 –––

18 –––

6.6 –––

V_DD= 100V

I_D= 9.8A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 5.1Ω

V_GS= 10V

C_iss

C_oss

C_rss

C_oss

C_osseff.

Input Capacitance

––– 1100 –––

––– 190 –––

V_GS= 0V

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

V_DS= 25V

–––

––– 1340 –––

––– 76 –––

––– 130 –––

44 –––

ƒ = 1.0MHz

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 160V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 0V to 160V ꢀ

Avalanche Characteristics

Parameter

Single Pulse Avalanche Energy

Typ.

Max.

240

9.8

Units

E_AS

I_AR

–––

Avalanche Current

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.1

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

Junction-to-Ambient

–––

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

(Body Diode)

MOSFET symbol

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– 1.3

––– 160 240

T_J= 25°C, I_S= 9.8A, V_GS= 0V

T_J= 25°C, I_F= 9.8A

Q_rr

t_on

––– 900 1350 nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

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IRFB/IRFS/IRFSL17N20D

100

VGS

15V

12V

10V

8.0V

7.0V

6.0V

5.5V

VGS

TOP

15V

12V

10V

8.0V

7.0V

6.0V

5.5V

BOTTOM 5.0V

5.0V

0.1

0.01

5.0V

20µs PULSE WIDTH

T = 25 C

T = 175 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

3.5

100

16A

3.0

2.5

2.0

1.5

1.0

0.5

0.0

T = 175 C

T = 25 C

= 50V

20µs PULSE WIDTH

= 10V

0.1

5.0

-60 -40 -20

20 40 60 80 100 120 140 160 180

6.0

7.0

8.0 9.0

10.0

T , Junction Temperature ( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFB/IRFS/IRFSL17N20D

10000

= 9.8A

= 0V,

f = 1 MHZ

= 160V

= 100V

= 40V

= C + C

SHORTED

iss

= C

rss

= C + C

oss

1000

100

Ciss

Coss

Crss

FOR TEST CIRCUIT

SEE FIGURE 13

100

1000

, Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 175 C

10us

100us

T = 25 C

1ms

10ms

T = 25 C

T = 175 C

Single Pulse

= 0 V

0.1

0.2

100

1000

0.5

0.8

1.1

1.4

, Drain-to-Source Voltage (V)

,Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRFB/IRFS/IRFSL17N20D

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T = P

x Z

+ T

thJC C

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFB/IRFS/IRFSL17N20D

500

400

300

200

100

1 5V

TOP

4.0A

7.0A

BOTTOM 9.8A

DRIVER

D.U.T

D D

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

Starting T , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

10 V

.3µF

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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IRFB/IRFS/IRFSL17N20D

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

Driver Gate Drive

P.W.

Period

D =

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET^®Power MOSFETs

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IRFB/IRFS/IRFSL17N20D

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415 )

3.78 (.149)

10.29 (.405 )

2.87 (.1 13)

2.62 (.1 03)

4 .69 (.18 5)

4 .20 (.16 5)

3.54 (.139)

1.3 2 (.05 2)

1.2 2 (.04 8)

6.4 7 (.2 55)

6.1 0 (.2 40)

15 .24 (.60 0)

14 .84 (.58 4)

1.15 (.04 5)

M IN

LE A D A S S IG N M E N TS

1 - G A T E

2 - D R A IN

3 - S O U R C E

4 - D R A IN

1 4.09 (.5 55)

1 3.47 (.5 30)

4.06 (.160)

3.55 (.140)

0.93 (.0 37)

0.69 (.0 27)

0.55 (.02 2)

0.46 (.01 8)

3 X

1 .40 (.05 5)

3 X

1 .15 (.04 5)

0.3 6 (.014 )

2.9 2 (.115 )

2.6 4 (.104 )

2 .54 (.10 0)

N O TE S :

D IM E N S IO N IN G

TO LE R A N C IN G P E R A N S I Y 14 .5 M , 1 982.

O U TL IN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B .

C O N TR O LLIN G D IM E N S IO N : IN C H

H E A T S IN K

LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

TO-220AB Part Marking Information

E XAM PL E : TH IS IS A N IR F 1010

W ITH AS SE M BLY

INTE R N AT ION AL

R E C TIFIE R

PA R T N U M BE R

LO T C O D E 9B 1M

IR F 1010

9246

LO G O

D ATE C O D E

(YYW W )

A S SE M B LY

LOT

C O D E

YEA R

= W EE K

W W

www.irf.com

IRFB/IRFS/IRFSL17N20D

D²Pak Package Outline

10.54 (.415)

10.29 (.405)

10.16 (.400)

REF.

- B -

1.32 (.052)

4.69 (.185)

4.20 (.165)

1.40 (.055)

- A -

M AX.

1.22 (.048)

6.47 (.255)

6.18 (.243)

1.78 (.070)

1.27 (.050)

15.49 (.610)

14.73 (.580)

2.79 (.110)

2.29 (.090)

2.61 (.103)

2.32 (.091)

5.28 (.208)

4.78 (.188)

8.89 (.350)

REF.

1.40 (.055)

1.14 (.045)

1.39 (.055)

1.14 (.045)

0.55 (.022)

0.46 (.018)

0.93 (.037)

0.69 (.027)

5.08 (.200)

0.25 (.010)

B A M

M INIMUM RECOM MENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

LEAD ASSIGNMENTS

1 - GATE

NO TES:

DIM ENSIONS AFTER SOLDER DIP.

17.78 (.700)

2 - DRAIN

3 - SOURCE

DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.

CONTROLLING DIM ENSION : INCH.

HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.

3.81 (.150)

2.54 (.100)

2.08 (.082)

D²Pak Part Marking Information

INTERNATIONAL

RECTIFIER

PART NUM BER

F530S

LOGO

9246

DATE CODE

(YYW W )

ASSEM BLY

YEAR

= W EEK

LOT CODE

W W

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IRFB/IRFS/IRFSL17N20D

TO-262 Package Outline

TO-262 Part Marking Information

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IRFB/IRFS/IRFSL17N20D

D²Pak Tape & Reel Information

TR R

1 .60 (.0 63)

1 .50 (.0 59)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEE D D IREC TIO N

TR L

11.60 (.457)

11.40 (.449)

1 .85 (.0 73)

1 .65 (.0 65)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED D IRE CTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

M AX.

60.00 (2.362)

M IN.

30.40 (1.197)

M AX.

NO TES

1. CO M FORM S TO EIA-418.

2. CO NTROLLING DIM ENSIO N: M ILLIM ETER.

3. DIM ENSION M EASURED

26.40 (1.039)

24.40 (.961)

@ HUB.

4. INCLUDES FLANGE DISTORTION

O UTER EDGE.

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature.

ꢀC_osseff. is a fixed capacitance that gives the same charging time

Starting T_J= 25°C, L = 5.0mH

R_G= 25Ω, I_AS= 9.8A.

as C_osswhile V_DSis rising from 0 to 80% V_DSS

I_SD≤ 9.8A, di/dt ≤ 110A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

This is only applied to TO-220AB package

This is applied to D²Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 4/00

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Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/

IRFS17N20DTRR [INFINEON]

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