IRFS4020 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;型号: | IRFS4020 |
厂家: | Infineon |
描述: | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
文件: | 总10页 (文件大小:340K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97393
IRFS4020PbF
DIGITAL AUDIO MOSFET
IRFSL4020PbF
Features
Key Parameters
• Key parameters optimized for Class-D audio
amplifier applications
VDS
200
V
mΩ
R
DS(ON) typ. @ 10V
85
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved
efficiency
Qg typ.
18
nC
nC
Ω
Q
sw typ.
G(int) typ.
TJ max
6.7
3.2
175
R
°C
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for
ruggedness
D
S
D
D
• Can deliver up to 300W per channel into 8Ω load in
half-bridge configuration amplifier
S
S
D
D
G
G
G
D2Pak
TO-262
IRFSL4020PbF
IRFS4020PbF
G
D
S
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
thelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
200
±20
18
Units
V
VDS
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
13
52
Power Dissipation
PD @TC = 25°C
PD @TC = 100°C
100
52
W
Power Dissipation
Linear Derating Factor
0.70
W/°C
°C
TJ
Operating Junction and
Storage Temperature Range
-55 to + 175
TSTG
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
1.43
40
Units
°C/W
Junction-to-Case
RθJC
Junction-to-Ambient (PCB Mount)
Rθ
JA
Notes through ꢀare on page 2
www.irf.com
1
05/14/09
IRFS/SL4020PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
200
–––
–––
3.0
–––
0.23
85
–––
–––
105
4.9
V
V
/ T
∆
J
∆Β
DSS
m
Ω
RDS(on)
VGS(th)
VGS = 10V, ID = 11A
–––
-13
–––
–––
–––
–––
–––
18
V
VDS = VGS, ID = 100µA
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
24
––– mV/°C
20
250
100
-100
–––
29
µA VDS = 200V, VGS = 0V
V
DS = 200V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
V
VGS = -20V
DS = 50V, ID = 11A
gfs
V
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
RG(int)
td(on)
tr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
4.5
1.4
5.3
6.8
6.7
3.2
7.8
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 100V
nC VGS = 10V
ID = 11A
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Internal Gate Resistance
Turn-On Delay Time
See Fig. 6 and 18
Ω
VDD = 100V, VGS = 10V
Rise Time
ID = 11A
td(off)
tf
Turn-Off Delay Time
16
ns RG = 2.4Ω
Fall Time
6.3
Ciss
Coss
Crss
Input Capacitance
––– 1200 –––
VGS = 0V
pF VDS = 50V
ƒ = 1.0MHz,
Output Capacitance
–––
–––
–––
–––
91
20
–––
–––
–––
–––
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
See Fig.5
Coss eff.
110
4.5
VGS = 0V, VDS = 0V to 160V
Between lead,
LD
D
S
nH 6mm (0.25in.)
G
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
mJ
A
EAS
IAR
–––
94
See Fig. 14, 15, 16a, 16b
Repetitive Avalanche Energy
EAR
mJ
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS @ TC = 25°C
ISM
–––
–––
18
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
52
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
82
1.3
120
420
V
TJ = 25°C, IS = 11A, VGS = 0V
ns TJ = 25°C, IF = 11A
di/dt = 100A/µs
nC
Qrr
280
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.62mH, RG = 25Ω, IAS = 11A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
ꢀ Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information.
θ
2
www.irf.com
IRFS/SL4020PbF
100
10
1
100
10
VGS
15V
12V
VGS
15V
12V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
BOTTOM
5.0V
1
0.1
0.01
5.0V
60µs PULSE WIDTH
Tj = 175°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.5
100
10
1
I
= 11A
V
= 25V
D
DS
V
= 10V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
GS
≤
60µs PULSE WIDTH
T
= 175°C
J
T
= 25°C
J
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
2
3
4
5
6
7
8
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
12.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I
= 11A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
10.0
8.0
6.0
4.0
2.0
0.0
rss
oss
gd
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
= C + C
ds
gd
C
iss
C
oss
C
rss
10
0
5
10
15
20
1
10
100
1000
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
3
IRFS/SL4020PbF
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
10
1
1
T
= 25°C
J
100µsec
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
0.01
0.001
DC
V
= 0V
10msec
GS
0.1
0.2
0.4
SD
0.6
0.8
1.0
1.2
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
20
18
16
14
12
10
8
5.0
4.0
3.0
2.0
1.0
I
= 100µA
D
6
4
2
0
25
50
T
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150175 200
, Temperature ( °C )
, Junction Temperature (°C)
T
J
J
Fig 9. Maximum Drain Current vs. Junction Temperature
Fig 10. Threshold Voltage vs. Temperature
10
1
D = 0.50
0.20
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.10
0.05
0.0283
0.3659
0.7264
0.3093
0.000007
0.000140
0.001376
0.007391
τ
τ
J τJ
τ
0.1
0.01
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRFS/SL4020PbF
300
275
250
225
200
175
150
125
100
75
400
300
200
100
0
I
I
= 11A
D
D
TOP
1.6A
2.4A
BOTTOM 11A
T
= 125°C
J
T
= 25°C
J
50
5
6
7
8
9
10 11 12 13 14 15 16
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
0.01
10
1
0.05
0.10
0.1
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
100
TOP
BOTTOM 1.0% Duty Cycle
= 11A
Single Pulse
I
80
60
40
20
0
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
J
Fig 15. Maximum Avalanche Energy vs. Temperature
EAS (AR) = PD (ave)·tav
www.irf.com
5
IRFS/SL4020PbF
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18a. Gate Charge Test Circuit
Fig 18b Gate Charge Waveform
6
www.irf.com
IRFS/SL4020PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
7
IRFS/SL4020PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRFS/SL4020PbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/09
www.irf.com
9
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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