IRFS4227PBF [INFINEON]
PDP SWITCH; PDP开关
| 型号： | IRFS4227PBF |
| 厂家： | 
Infineon |
| 描述： | PDP SWITCH |
| 文件： | 总9页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97037
IRFS4227PbF
PDP SWITCH
Features
Key Parameters
l
Advanced Process Technology
VDS max
DS (Avalanche) typ.
DS(ON) typ. @ 10V
RP max @ TC= 100°C
200
240
22
V
V
l
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
V
l
m:
A
R
I
130
175
TJ max
°C
l
l
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
D
D
l
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for
Improved Ruggedness
l
S
G
D
l
Repetitive Avalanche Capability for Robustness
G
and Reliability
S
D2Pak
G
D
S
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
±30
Parameter
Gate-to-Source Voltage
Units
VGS
V
A
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
62
44
260
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
130
Repetitive Peak Current g
Power Dissipation
330
W
190
Power Dissipation
2.2
Linear Derating Factor
W/°C
°C
TJ
-40 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Thermal Resistance
Parameter
Junction-to-Case f
Typ.
Max.
0.45*
40
Units
RθJC
RθJA
–––
–––
Junction-to-Ambient (PCB Mounted) fh
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through are on page 8
www.irf.com
1
9/27/05
IRFS4227PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
200
–––
–––
3.0
–––
170
22
–––
V
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
D
VGS = 10V, ID = 46A e
mΩ
26
VDS = VGS, ID = 250µA
VGS(th)
–––
-13
–––
–––
–––
–––
–––
70
5.0
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
49
––– mV/°C
VDS = 200V, VGS = 0V
20
1.0
µA
mA
nA
V
V
V
DS = 200V, VGS = 0V, TJ = 125°C
GS = 20V
GS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
98
VDS = 25V, ID = 46A
DD = 100V, ID = 46A, VGS = 10Ve
gfs
Qg
Qgd
tst
S
V
–––
–––
100
nC
Gate-to-Drain Charge
23
–––
–––
VDD = 160V, VGS = 15V, RG= 4.7Ω
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 160V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.4µF, VGS = 15V
Shoot Through Blocking Time
–––
ns
µJ
–––
–––
570
910
–––
–––
EPULSE
Energy per Pulse
VDS = 160V, RG= 4.7Ω, TJ = 100°C
VGS = 0V
Ciss
Input Capacitance
––– 4600 –––
VDS = 25V
Coss
Crss
Output Capacitance
–––
–––
–––
–––
460
91
–––
–––
–––
–––
pF
ƒ = 1.0MHz,
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
VGS = 0V, VDS = 0V to 160V
Coss eff.
LD
360
4.5
Between lead,
D
S
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Avalanche Characteristics
Typ.
–––
–––
240
–––
Max.
140
46
Parameter
Units
mJ
mJ
V
EAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltageꢀc
Avalanche Currentꢀd
EAR
VDS(Avalanche)
IAS
–––
37
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
62
A
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)ꢀc
–––
–––
260
TJ = 25°C, IS = 46A, VGS = 0V e
TJ = 25°C, IF = 46A, VDD = 50V
di/dt = 100A/µs e
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
100
430
1.3
150
640
V
ns
nC
Qrr
2
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IRFS4227PbF
1000
100
10
VGS
15V
10V
8.0V
7.0V
VGS
15V
10V
8.0V
7.0V
TOP
TOP
BOTTOM
BOTTOM
100
7.0V
7.0V
10
≤ 60µs PULSE WIDTH
Tj = 175°C
≤ 60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
100.0
10.0
1.0
4.0
3.0
2.0
1.0
0.0
I
= 46A
V
= 25V
D
DS
≤ 60µs PULSE WIDTH
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
0.1
3.0
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
1000
1000
L = 220nH
C = Variable
L = 220nH
C = 0.4µF
100°C
900
800
700
600
500
400
300
200
100
100°C
25°C
800
25°C
600
400
200
0
130
140
150
160
170
180
190
110
120
130
140
150
160
170
I
Peak Drain Current (A)
V
Drain-to -Source Voltage (V)
D,
DS,
Fig 6. Typical EPULSE vs. Drain Current
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
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3
IRFS4227PbF
1400
1000.0
100.0
10.0
1.0
L = 220nH
1200
C= 0.4µF
C= 0.3µF
C= 0.2µF
1000
800
600
400
200
0
T
= 175°C
J
T
= 25°C
0.8
J
V
= 0V
GS
1.0
0.1
25
50
75
100
125
150
0.2
0.4
0.6
1.2
Temperature (°C)
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical EPULSE vs.Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
8000
20
V
C
= 0V,
f = 1 MHZ
GS
I = 46A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C
rss
gd
16
12
8
C
= C + C
6000
4000
2000
0
oss ds
gd
Ciss
Coss
Crss
4
0
0
20
40
60
80
100
120
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
70
60
50
40
30
20
10
0
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1µsec
100
10
1
100µsec
10µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
25
50
75
100
125
150
175
1
10
100
1000
T
, CaseTemperature (°C)
V
, Drain-to-Source Voltage (V)
C
DS
Fig 12. Maximum Safe Operating Area
Fig 11. Maximum Drain Current vs. Case Temperature
4
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IRFS4227PbF
600
500
400
300
200
100
0
0.16
0.12
0.08
0.04
0.00
I
D
I
= 46A
D
TOP
8.5A
14A
37A
BOTTOM
T
T
= 125°C
J
= 25°C
9
J
5
6
7
8
10
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
GS
J
Fig 13. On-Resistance Vs. Gate Voltage
Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0
200
ton= 1µs
Duty cycle = 0.25
4.5
4.0
Half Sine Wave
Square Pulse
160
I
= 250µA
D
120
3.5
3.0
2.5
2.0
1.5
80
40
0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
25
50
75
100
125
150
175
T
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Fig 15. Threshold Voltage vs. Temperature
Case temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.08698 0.000074
R1
τ
JτJ
τ
τ
Cτ
τ
1τ1
τ
2 τ2
3τ3
0.2112 0.001316
0.1506 0.009395
0.02
0.01
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFS4227PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• di/dt controlled by RG
RG
+
-
Body Diode
Inductor Current
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01Ω
t
p
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFS4227PbF
Fig 21b. tst Test Waveforms
Fig 21a. tst and EPULSE Test Circuit
Fig 21c. EPULSE Test Waveforms
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7
IRFS4227PbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
PART NUMBER
LOT CODE 8024
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
Note: "P" in assembly line
pos ition indicates "L ead-F ree"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
F530S
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
ASSEMBLY
LOT CODE
WEEK 02
A= ASSEMBLY SITE CODE
8
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IRFS4227PbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.2mH, RG = 25Ω, IAS = 37A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢁ Half sine wave with duty cycle = 0.25, ton=1µsec.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/05
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9
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