IRFS4610PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFS4610PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总11页 (文件大小：417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95936B
IRFB4610PbF
IRFS4610PbF
IRFSL4610PbF
Applications
HEXFET® Power MOSFET
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
l Lead-Free
D
S
VDSS
100V
11m
RDS(on) typ.
G
14m
73A
max.
ID
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
S
S
S
D
D
D
G
G
G
D2Pak
IRFS4610PbF
TO-262
IRFSL4610PbF
TO-220AB
IRFB4610PbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Max.
73
Units
A
Continuous Drain Current, VGS @ 10V
52
ID @ TC = 100°C
IDM
290
190
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
W
1.3
W/°C
V
± 20
VGS
Gate-to-Source Voltage
7.6
Peak Diode Recovery
dV/dt
TJ
V/ns
°C
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
10lb in (1.1N m)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy
EAS (Thermally limited)
370
mJ
A
Avalanche Current
IAR
See Fig. 14, 15, 16a, 16b,
Repetitive Avalanche Energy
EAR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.77
–––
62
Units
Rθ
Rθ
Rθ
Rθ
Junction-to-Case
JC
CS
JA
JA
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
°C/W
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D2Pak
–––
40
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1
01/23/06
IRF/B/S/SL4610PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.085 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
/ T
∆
J
∆
(BR)DSS
RDS(on)
VGS(th)
IDSS
–––
2.0
11
14
4.0
20
VGS = 10V, ID = 44A
m
Ω
–––
V
VDS = VGS, ID = 100µA
Drain-to-Source Leakage Current
––– –––
µA
VDS = 100V, VGS = 0V
––– ––– 250
––– ––– 200
––– ––– -200
V
DS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
nA VGS = 20V
GS = -20V
f = 1MHz, open drain
V
RG
–––
1.5
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 44A
nC ID = 44A
73
––– –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
90
20
36
18
87
53
70
140
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
V
DS = 80V
GS = 10V
V
ns VDD = 65V
ID = 44A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 5.6Ω
VGS = 10V
Ciss
Coss
Crss
Input Capacitance
––– 3550 –––
––– 260 –––
––– 150 –––
––– 330 –––
––– 380 –––
pF VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
VDS = 50V
ƒ = 1.0MHz
Coss eff. (ER)
V
GS = 0V, VDS = 0V to 80V , See Fig.11
GS = 0V, VDS = 0V to 80V , See Fig. 5
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Coss eff. (TR)
V
Diode Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– –––
A
73
D
S
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
G
ISM
––– ––– 290
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
53
V
TJ = 25°C, IS = 44A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 85V,
IF = 44A
di/dt = 100A/µs
–––
–––
–––
–––
–––
35
42
44
65
2.1
ns
63
Qrr
Reverse Recovery Charge
66
nC
A
98
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.39mH
RG = 25Ω, IAS = 44A, VGS =10V. Part not recommended for use
above this value.
ꢀ Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
.
.
ISD ≤ 44A, di/dt ≤ 660A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
2
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IRF/B/S/SL4610PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
TOP
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
Tj = 25°C
≤
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
100.0
10.0
1.0
3.0
2.5
2.0
1.5
1.0
0.5
I
= 73A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
= 25V
J
V
DS
≤ 60µs PULSE WIDTH
0.1
2.0
3.0
V
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
6000
5000
4000
3000
2000
1000
0
20
V
C
= 0V,
f = 1 MHZ
GS
I = 44A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 80V
DS
C
= C
rss
gd
16
12
8
VDS= 50V
VDS= 20V
C
= C + C
oss
ds
gd
Ciss
4
Coss
Crss
0
0
20
40
60
80
100 120 140
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRF/B/S/SL4610PbF
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
100µsec
T
= 175°C
J
10.0
1.0
1msec
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
DC
0.1
0.1
1
10
100
1000
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
80
60
40
20
0
125
120
115
110
105
100
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Junction Temperature (°C)
T
, Junction Temperature (°C)
J
J
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
1600
2.0
1.5
1.0
0.5
0.0
I
D
TOP
4.6A
6.3A
44A
1200
800
400
0
BOTTOM
25
50
75
100
125
150
175
0
20
40
60
80
100
Starting T , Junction Temperature (°C)
V
Drain-to-Source Voltage (V)
J
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
4
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IRF/B/S/SL4610PbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.4367 0.001016
τ
J τJ
τ
τ
0.01
Cτ
1 τ1
Ci= τi/Ri
τ
2τ2
0.3337 0.009383
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse
∆
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
400
300
200
100
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max)
is exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1% Duty Cycle
= 44A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
25
50
75
100
125
150
175
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Starting T , Junction Temperature (°C)
J
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
IRF/B/S/SL4610PbF
16
12
8
5.0
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250µA
4.0
3.0
2.0
1.0
ID = 100µA
I
= 29A
F
4
V
= 85V
R
T
= 125°C
= 25°C
J
J
T
0
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
di / dt - (A / µs)
f
T
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage Vs. Temperature
16
300
12
8
200
100
I
= 29A
= 85V
I
= 44A
= 85V
F
F
4
0
V
V
R
R
T
= 125°C
= 25°C
T
= 125°C
= 25°C
J
J
T
T
J
J
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / µs)
f
di / dt - (A / µs)
f
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
300
200
100
0
I
= 44A
= 85V
F
V
T
R
= 125°C
= 25°C
J
T
J
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / µs)
f
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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IRF/B/S/SL4610PbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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7
IRF/B/S/SL4610PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
8
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IRF/B/S/SL4610PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
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9
IRF/B/S/SL4610PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
10
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IRF/B/S/SL4610PbF
D2Pak (TO-263AB) Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
26.40 (1.039)
24.40 (.961)
4
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/06
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11
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