IRFS7730 [INFINEON]

75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装;


型号：	IRFS7730
厂家：	Infineon
描述：	75V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装
文件：	总13页 (文件大小：663K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

StrongIRFET™

IRFB7730PbF

IRFS7730PbF

IRFSL7730PbF

HEXFET^®Power MOSFET

Application

 Brushed motor drive applications

 BLDC motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC inverters

V_DSS

75V

R_DS(on)typ.

max

2.2m

2.6m

246A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

195A

Benefits

 Improved gate, avalanche and dynamic dV/dt ruggedness

 Fully characterized capacitance and avalanche SOA

 Enhanced body diode dV/dt and dI/dt capability

 Lead-free, RoHS compliant

TO-220AB

TO-262

D2Pak

IRFB7730PbF

IRFSL7730PbF

IRFS7730PbF

Gate

Drain

Source

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRFB7730PbF

IRFSL7730PbF

IRFS7730PbF

TO-220

TO-262

D²-Pak

Tube

IRFB7730PbF

IRFSL7730PbF

IRFS7730PbF

Tube

Tape and Reel Left

800

IRFS7730TRLPbF

250

200

150

100

= 100A

Limited by package

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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IRFB/S/SL7730PbF

Absolute Maximum Rating

Symbol

Parameter

Max.

246

174

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current 

195

984*

375

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

2.5

V_GS

Gate-to-Source Voltage

± 20

T_J

T_STG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Avalanche Characteristics

Symbol

E_{AS (Thermally limited)}

I_AR

Max.

465

898

Units

Parameter

Single Pulse Avalanche Energy 

Single Pulse Avalanche Energy 

Avalanche Current 

See Fig 15, 16, 23a, 23b

E_AR

Repetitive Avalanche Energy 

Thermal Resistance

Symbol

Parameter

Typ.

–––

0.50

–––

Max.

0.40

–––

Units

Junction-to-Case 

R_JC

R_CS

R_JA

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient (TO-220)

°C/W

Junction-to-Ambient (PCB Mount) (D²Pak) 

Static @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

––– –––

V_GS= 0V, I_D= 250µA

–––

2.1 –––

––– –––

––– ––– 150

––– ––– 100

––– ––– -100

2.2

2.6

––– mV/°C Reference to 25°C, I_D= 1mA 

V_(BR)DSS/T_J

R_DS(on)

2.6

–––

3.7

V_GS= 10V, I_D= 100A 

m



V_GS= 6.0V, I_D= 50A 

V_DS= V_GS, I_D= 250µA

V_GS(th)

I_DSS

Gate Threshold Voltage

1.0

V_DS= 75 V, V_GS= 0V

Drain-to-Source Leakage Current

µA

V_DS= 75V,V_GS= 0V,T_J= 125°C

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Gate Resistance

_GS= 20V

_GS= -20V

I_GSS

R_G

–––

2.1

–––



Notes:

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by

source bonding technology. Note that current limitations arising from heating of the device leads may occur with

some lead mounting arrangements. (Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction temperature.

 Limited by T_Jmax, starting T_J= 25°C, L = 93µH, R_G= 50, I_AS= 100A, V_GS=10V.

I_SD 100A, di/dt  1626A/µs, V_DD V_(BR)DSS, T_J175°C.

Pulse width  400µs; duty cycle  2%.

 C_osseff. (TR) is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_DSS

 C_osseff. (ER) is a fixed capacitance that gives the same energy as C_osswhile V_DSis rising from 0 to 80% V_DSS

 R_is measured at T_Japproximately 90°C.

 Limited by T_Jmax, starting T_J= 25°C, L = 1mH, R_G= 50, I_AS= 42A, V_GS=10V.

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques

refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf

* Pulse drain current is limited at 780A by source bonding technology.

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IRFB/S/SL7730PbF

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

gfs

Parameter

Forward Transconductance

Total Gate Charge

Min.

249

–––

Typ. Max. Units

Conditions

V_DS= 10V, I_D=100A

I_D= 100A

–––

271

–––

407

–––

Q_g

Q_gs

Gate-to-Source Charge

Gate-to-Drain Charge

Total Gate Charge Sync. (Qg– Qgd)

Turn-On Delay Time

V_DS= 38V

Q_gd

V_GS= 10V

Q_sync

t_d(on)

t_r

192

V_DD= 38V

I_D= 100A

Rise Time

120

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

–––

180

115

–––

R_G= 2.7

V_GS= 10V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 13660 –––

V_GS= 0V

–––

1120

690

–––

V_DS= 25V

ƒ = 1.0MHz, See Fig.7

Effective Output Capacitance

(Energy Related)

C_{oss eff.(ER)}

C_{oss eff.(TR)}

–––

1060

1275

–––

V_GS= 0V, VDS = 0V to 60V

V_GS= 0V, VDS = 0V to 60V

Output Capacitance (Time Related)

Diode Characteristics

Symbol

Parameter

Min.

Typ. Max. Units

Conditions

MOSFET symbol

Continuous Source Current

(Body Diode)

I_S

–––

––– 246

showing the

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

I_SM

–––

984*

V_SD

Diode Forward Voltage

1.2

T_J= 25°C,I_S= 100A,V_GS= 0V 

dv/dt

Peak Diode Recovery dv/dt

–––

2.6

––– V/ns T_J= 175°C,I_S=100A,V_DS= 75V

–––

T_J= 25°C

V_DD= 64V

I_F= 100A,

t_rr

Reverse Recovery Time

T_J= 125°C

T_J= 25°C di/dt = 100A/µs 

Q_rr

Reverse Recovery Charge

Reverse Recovery Current

T_J= 125°C

T_J= 25°C



I_RRM

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IRFB/S/SL7730PbF

10000

1000

100

10000

1000

100

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

60µs PULSE WIDTH

Tj = 175°C

60µs PULSE WIDTH

Tj = 25°C



0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

Fig 3. Typical Output Characteristics

2.4

2.0

1.6

1.2

0.8

0.4

1000

100

= 100A

= 10V

T = 175°C

T = 25°C

= 25V

60µs PULSE WIDTH



0.1

-60 -40 -20

0 20 40 60 80 100120140160180

2.0

3.0

4.0

5.0

6.0

7.0

T , Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

14.0

1000000

100000

10000

1000

= 0V,

f = 1 MHZ

I = 100A

= C + C , C

SHORTED

iss

12.0

= C

= 60V

= 38V

= 15V

rss

oss

= C + C

10.0

8.0

6.0

4.0

2.0

0.0

iss

oss

rss

100

100 150 200 250 300 350

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 8. Typical Gate Charge vs.

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Gate-to-Source Voltage

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IRFB/S/SL7730PbF

1000

100

1000

100

100µsec

1msec

T = 175°C

Limited by

package

OPERATION

IN THIS

AREA

T = 25°C

LIMITED BY

(on)

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

= 0V

0.1

1.0

0.1

0.2

0.6

1.0

1.4

1.8

2.2

, Drain-toSource Voltage (V)

, Source-to-Drain Voltage (V)

Fig 10. Maximum Safe Operating Area

Fig 9. Typical Source-Drain Diode Forward Voltage

6.0

Id = 1.0mA

5.0

4.0

3.0

2.0

1.0

0.0

-10

10 20 30 40 50 60 70 80

-60 -40 -20

20 40 60 80 100120140160180

, Temperature ( °C )

Drain-to-Source Voltage (V)

DS,

Fig 11. Drain-to-Source Breakdown Voltage

Fig 12. Typical C_ossStored Energy

3.0

2.8

2.6

2.4

2.2

Vgs = 5.5V

Vgs = 6.0V

Vgs = 7.0V

Vgs = 8.0V

Vgs = 10V

2.0

20 40 60 80 100 120 140 160 180 200

, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

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IRFB/S/SL7730PbF

0.1

D = 0.50

0.20

0.10

0.05

0.01

0.02

0.01

0.001

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

Allowed avalanche Current vs avalanche



pulsewidth, tav, assuming Tj = 150°C and

Tstart = 25°C (Single Pulse)

Allowed avalanche Current vs avalanche



pulsewidth, tav, assuming j = 25°C and

Tstart = 150°C.

1.0E-06

1.0E-05

1.0E-04

tav (sec)

1.0E-03

1.0E-02

Fig 15. Avalanche Current vs. Pulse Width

500

400

300

200

100

TOP

BOTTOM 1.0% Duty Cycle

= 100A

Single Pulse

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1.Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for every

part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not

exceeded.

3. Equation below based on circuit and waveforms shown in Figures

23a, 23b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

6. I_av= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed T_jmax

(assumed as 25°C in Figure 15, 16).

t_av= Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

100

125

150

175

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

Starting T , Junction Temperature (°C)

PD (ave) = 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

_av= 2T/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)· av}

Fig 16. Maximum Avalanche Energy vs. Temperature

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4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

I = 60A

= 64V

T = 25°C

T = 125°C

= 250µA

= 1.0mA

= 1.0A

-75 -50 -25

25 50 75 100 125 150 175

200

400

600

800

1000

T , Temperature ( °C )

di /dt (A/µs)

Fig 17. Threshold Voltage vs. Temperature

Fig 18. Typical Recovery Current vs. dif/dt

500

I = 100A

I = 60A

= 64V

400

300

200

100

T = 25°C

T = 125°C

T = 25°C

T = 125°C

200

400

600

800

1000

200

400

600

800

1000

di /dt (A/µs)

Fig 19. Typical Recovery Current vs. dif/dt

Fig 20. Typical Stored Charge vs. dif/dt

500

I = 100A

= 64V

400

300

200

100

T = 25°C

T = 125°C

200

400

600

800

1000

di /dt (A/µs)

Fig 21. Typical Stored Charge vs. dif/dt

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IRFB/S/SL7730PbF

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01



Fig 23a. Unclamped Inductive Test Circuit

Fig 23b. Unclamped Inductive Waveforms

Fig 24a. Switching Time Test Circuit

Fig 24b. Switching Time Waveforms

Vds

Vgs

VDD

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 25b. Gate Charge Waveform

Fig 25a. Gate Charge Test Circuit

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IRFB/S/SL7730PbF

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

E X A M P L E :

T H IS IS A N IR F 1 0 1 0

L O C O D E 1 7 8 9

A S S E M B L E D

IN T H A S S E M B L Y L IN

P A R T N U M B E R

D A T E C O D E

IN T E R N A T IO

R E C T IF IE R

L O

N A L

1 9 , 2 0 0 0

"C "

Y E A R

E E K 1 9

L IN

2 0 0 0

o t e : "P " in a s s e m b ly lin e p o s it io n

in d ic a t e s "L e a d F r e e "

A S S E M B L Y

L O C O D E

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFB/S/SL7730PbF

TO-262 Package Outline (Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

EXAMPLE: THISIS AN IRL3103L

LOTCODE1789

PART NUMBER

INTERNATIONAL

ASSEMBLED ON WW19, 1997

RECTIFIER

INTHEASSEMBLYLINE"C"

LOGO

DATE CODE

YEAR7 = 1997

WEEK 19

ASSEMBLY

LOT CODE

LINEC

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

DATE CODE

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

YEAR7 = 1997

ASSEMBLY

LOT CODE

WEEK 19

A = ASSEMBLYSITE CODE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFB/S/SL7730PbF

D²Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))

D²Pak (TO-263AB) Part Marking Information

THIS IS AN IRF530S WITH

LOT CODE 8024

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLED ON WW 02, 2000

IN THE ASSEMBLY LINE "L"

F530S

DATE CODE

YEAR 0 = 2000

WEEK 02

ASSEMBLY

LOT CODE

LINE L

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

F530S

DATE CODE

P = DESIGNATES LEAD - FREE

PRODUCT (OPTIONAL)

ASSEMBLY

LOT CODE

YEAR 0 = 2000

WEEK 02

A = ASSEMBLY SITE CODE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFB/S/SL7730PbF

D²Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Qualification Information^†

Industrial

(per JEDEC JESD47F) ^††

Qualification Level

TO-220

D²Pak

TO-262

N/A

MSL1

N/A

Moisture Sensitivity Level

Yes

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History

Date

Comments

 Updated E_{AS (L =1mH)}= 898mJ on page 2

 Updated note 9 “Limited by T_Jmax, starting T_J= 25°C, L = 1mH, R_G= 50, I_AS= 42A, V_GS=10V” on page 2

 Updated package outline on page 9,10,11.

11/7/2014

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IRFS7730 [INFINEON]

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