IRFTS9342 [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;


型号：	IRFTS9342
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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PD - 96411A

IRFTS9342PbF

HEXFET^®Power MOSFET

V_DS

-30

V_{GS max}

R_{DS(on) max}

(@V_GS= -10V)

R_{DS(on) max}

(@V_GS= -4.5V)

Q_{g typ}

TSOP-6

Top View

I_D

-5.8

(@T_A= 25°C)

Applications

l Battery operated DC motor inverter MOSFET

l System/Load Switch

Features and Benefits

Features

Benefits

Industry-Standard TSOP-6 Package

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Multi-Vendor Compatibility

Environmentally Friendlier

Increased Reliability

results in

⇒

MSL1, Consumer Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Quantity

IRFTS9342TRPbF

TSOP-6

Tape and Reel

3000

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

-30

±20

-5.8

-4.6

-46

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@T_A= 25°C

@T_A= 70°C

Power Dissipation

2.0

1.3

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 2

www.irf.com

02/29/12

IRFTS9342PbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= -250μA

––– mV/°C Reference to 25°C, I_D= -1mA

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

-30

–––

-1.3

–––

6.8

–––

ΔΒV_DSS/ΔT_J

R_DS(on)

V_GS= -10V, I_D= -5.8A

_GS= -4.5V, I_D= -4.6A

mΩ

V_GS(th)

Gate Threshold Voltage

–––

-5.5

–––

-2.4

V_DS= V_GS, I_D= -25μA

V_GS(th)

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

––– mV/°C

I_DSS

-1.0

μA

V_DS= -24V, V_GS= 0V

V_DS= -24V, V_GS= 0V, T_J= 125°C

V_GS= -20V

-150

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

-100

100

V_GS= 20V

gfs

Q_g

–––

V_DS= -10V, I_D= -4.6A

V_DS= -15V

–––

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Q_gs

Q_gd

1.8

3.1

V_GS= -10V

I_D= -4.6A

R_G

t_d(on)

–––

4.6

–––

V_DD= -15V, V_GS= -10V

t_r

–––

I_D= -4.6A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.8

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

595

133

V_GS= 0V

V_DS= -25V

ƒ = 1.0KHz

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

MOSFET symbol

–––

-2.0

(Body Diode)

Pulsed Source Current

showing the

integral reverse

I_SM

–––

-46

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

–––

-1.2

T = 25°C, I = -4.6A, V = 0V

J S GS

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

ns T = 25°C, I = -4.6A, V_DD= -24V

J F

Q_rr

t_on

di/dt = 100A/μs

Time is dominated by parasitic Inductance

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θ

Junction-to-Ambient

–––

62.5

°C/W

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board.

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IRFTS9342PbF

100

VGS

-10V

VGS

-10V

TOP

-7.0V

-5.0V

-4.5V

-4.0V

-3.5V

-3.0V

-2.8V

-7.0V

-5.0V

-4.5V

-4.0V

-3.5V

-3.0V

-2.8V

BOTTOM

-2.8V

60μs PULSE WIDTH

Tj = 150°C

≤

60μs PULSE WIDTH

Tj = 25°C

≤

0.1

100

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

1.6

1.4

1.2

1.0

0.8

0.6

= -5.8A

= -10V

= 150°C

= 25°C

= -15V

≤60μs PULSE WIDTH

0.1

-60 -40 -20

20 40 60 80 100 120140 160

, Junction Temperature (°C)

-V , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

14.0

10000

1000

100

= 0V,

= C

f = 1 MHZ

+ C , C

SHORTED

I = -4.6A

iss

12.0

= C

rss

oss

= -24V

= -15V

= -6.0V

= C + C

10.0

8.0

6.0

4.0

2.0

0.0

iss

oss

rss

10 12 14 16

-V , Drain-to-Source Voltage (V)

100

Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRFTS9342PbF

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R (on)

= 150°C

100μsec

1msec

= 25°C

10msec

0.1

0.01

Tc = 25°C

Tj = 150°C

Single Pulse

= 0V

0.1

0.01

0.1

100

0.4

0.6

0.8

1.0

1.2

1.4

, Drain-to-Source Voltage (V)

-V , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

3.0

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

ID = -25μA

= -250μA

= -1.0mA

ID = -10mA

= -1.0A

100

125

150

-75 -50 -25

25 50 75 100 125 150

, Ambient Temperature (°C)

, Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

Fig 9. Maximum Drain Current vs.

Case Temperature

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

SINGLE PULSE

( THERMAL RESPONSE )

0.01

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + T

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFTS9342PbF

100

220

200

180

160

140

120

100

= -5.8A

Vgs = -4.5V

T = 125°C

Vgs = -10V

= 25°C

10 12 14 16 18 20

-I , Drain Current (A)

-V

Gate -to -Source Voltage (V)

GS,

Fig 12. On-Resistance vs. Gate Voltage

Fig 13. Typical On-Resistance vs. Drain Current

120

100

TOP

-0.91A

-1.4A

BOTTOM -4.6A

100

0.0001 0.001

0.01

0.10

100

125

150

Time (sec)

Starting T , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy vs. Drain Current

Fig 15. Typical Power vs. Time

Driver Gate Drive

P.W.

Period

D =

D.U.T *

P.W.

=10V

CircuitLayoutConsiderations

• LowStrayInductance

• Ground Plane

• LowLeakageInductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

• di/dt controlled by R_G

Re-Applied

Voltage

R_G

• Driver same type as D.U.T.

Body Diode

InductorCurrent

Forward Drop

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

* Reverse Polarity of D.U.T for P-Channel

Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET^®Power MOSFETs

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IRFTS9342PbF

Vds

Vgs

VCC

DUT

Vgs(th)

20K

Qgs1

Qgs2

Qgodr

Qgd

Fig 17a. Gate Charge Test Circuit

Fig 17b. Gate Charge Waveform

D.U.T

DRIVER

-V_GS

-20V

0.01

(BR)DSS

15V

Fig 18b. Unclamped Inductive Waveforms

Fig 18a. Unclamped Inductive Test Circuit

R_D

V_DS

d(on)

d(off)

V_GS

D.U.T.

10%

R_G

V_DD

-V_GS

90%

PulseWidth ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 19a. Switching Time Test Circuit

Fig 19b. Switching Time Waveforms

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IRFTS9342PbF

TSOP-6 Package Outline

TSOP-6 Part Marking Information

Y = YEAR

W = WEE K

DATE CODE MARKING INSTRUCTIONS

WW= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

PART NUMBER

WORK

YEAR

WEEK

2011 2001

2012 2002

2013 2003

2014 2004

2015 2005

2016 2006

2017 2007

2018 2008

2019 2009

2020 2010

LOT

CODE

TOP

PART NUMBER CODE REFERENCE:

A = SI3443DV

B = IRF5800

C = IR F 5850

D = IRF5851

E = IRF5852

F = IRF5801

G = IRF5803

H = IRF5804

I = IRF5805

J = IRF5806

K = IRF5810

N = IRF5802

O = IRLTS6342TRPBF

P = IRFTS8342TRPBF

R = IRFTS9342TRPBF

S = Not applicable

WW = (27-52) IF PRECEDED BY A LETTER

WORK

T = IRLTS2242TRPBF

YEAR

WEEK

2011 2001

2012 2002

2013 2003

2014 2004

2015 2005

2016 2006

2017 2007

2018 2008

2019 2009

2020 2010

Note: A line above the work week

(as shown here) indicates Lead-Free.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com

IRFTS9342PbF

TSOP-6 Tape and Reel Information

8mm

FEED DIRECTION

4mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481 & EIA-541.

178.00

( 7.008 )

MAX.

9.90 ( .390 )

8.40 ( .331 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Qualification information^†

Cons umer^††

(per JEDEC JESD47F ^†††guidelines )

Qualification level

MS L 1

Moisture Sensitivity Level

RoHS compliant

TSOP-6

(per IP C/JE DE C J-S T D-020D^†††

Yes

)

†

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

††

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

††† Applicable version of JEDEC standard at the time of product release.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 02/2012

www.irf.com

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

IRFTS9342 [INFINEON]

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