IRFU12N25DPBF [INFINEON]

HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26ヘ , ID = 14A ); HEXFET功率MOSFET （ VDSS = 250V ， RDS （ ON）最大值= 0.26ヘ， ID = 14A）


型号：	IRFU12N25DPBF
厂家：	Infineon
描述：	HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26ヘ , ID = 14A ) HEXFET功率MOSFET （ VDSS = 250V ， RDS （ ON）最大值= 0.26ヘ， ID = 14A）晶体晶体管功率场效应晶体管开关脉冲
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中文：	中文翻译
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PD - 95353A

IRFR12N25DPbF

IRFU12N25DPbF

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

l Lead-Free

V_DSS

250V

R_DS(on)max

I_D

14A

0.26Ω

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR12N25D

I-Pak

IRFU12N25D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.7

P_D@T_C= 25°C

Power Dissipation

144

W/°C

Linear Derating Factor

0.96

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

9.3

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θJA

Junction-to-Case

–––

1.04

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

Notes through ꢀare on page 10

www.irf.com

12/2/04

IRFR/U12N25DPbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

250 ––– –––

––– 0.29 ––– V/°C Reference to 25°C, I_D= 1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

R_DS(on)

V_GS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 0.26

3.0 ––– 5.0

Ω

V_GS= 10V, I_D= 8.4A

V_DS= V_GS, I_D= 250µA

V_DS= 200V, V_GS= 0V

V_DS= 160V, V_GS= 0V, T_J= 150°C

V_GS= 30V

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

I_GSS

V_GS= -30V

Dynamic @ T_J= 25°C (unless otherwise specified)

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

Conditions

g_fs

6.8

–––

––– –––

23 35

5.8 8.7

12 19

V_DS= 25V, I_D= 8.4A

I_D= 8.4A

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 200V

V_GS= 10V,

V_DD= 125V

9.1 –––

25 –––

16 –––

9.2 –––

I_D= 8.4A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.8Ω

V_GS= 10V

V_GS= 0V

C_iss

C_oss

C_rss

C_oss

C_osseff.

Input Capacitance

––– 810 –––

––– 130 –––

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

V_DS= 25V

–––

––– 1100 –––

––– 50 –––

––– 130 –––

22 –––

ƒ = 1.0MHz

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 200V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 0V to 200V ꢀ

Avalanche Characteristics

Parameter

Single Pulse Avalanche Energy

Avalanche Current

Typ.

Max.

250

8.4

Units

E_AS

I_AR

–––

E_AR

Repetitive Avalanche Energy

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

(Body Diode)

MOSFET symbol

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– 1.5

––– 140 –––

––– 710 –––

T_J= 25°C, I_S= 8.4A, V_GS= 0V

T_J= 25°C, I_F= 8.4A

Q_rr

t_on

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

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IRFR/U12N25DPbF

100

VGS

15V

12V

10V

VGS

TOP

15V

12V

10V

8.0V

7.0V

6.0V

5.5V

8.0V

7.0V

6.0V

5.5V

BOTTOM 5.0V

0.1

5.0V

0.01

0.001

20µs PULSE WIDTH

Tj = 25°C

20µs PULSE WIDTH

Tj = 175°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100.00

3.5

14A

3.0

2.5

2.0

1.5

1.0

0.5

0.0

T = 175°C

10.00

1.00

0.10

0.01

= 25°C

= 15V

20µs PULSE WIDTH

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160 180

5.0

7.0

9.0

11.0

13.0

15.0

T , Junction Temperature

( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFR/U12N25DPbF

10000

= 8.4A

= 0V,

f = 1 MHZ

= 200V

= 125V

= 50V

= C + C

SHORTED

iss

= C

rss

= C + C

oss

1000

100

Ciss

Coss

Crss

100

1000

, Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100.00

10.00

1.00

1000

100

OPERATION IN THIS AREA

= 175°C

LIMITED BY R

(on)

100µsec

= 25°C

1msec

Tc = 25°C

Tj = 175°C

Single Pulse

= 0V

10msec

1000

0.1

0.10

100

0.0

1.0

2.0

3.0

, Drain-toSource Voltage (V)

, Source-toDrain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

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IRFR/U12N25DPbF

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

( C)

, Case Temperature

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

/ t

2. Peak T

= P

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFR/U12N25DPbF

550

440

330

220

110

15V

TOP

3.4A

5.9A

8.4A

BOTTOM

DRIVER

D.U.T

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

Starting T , Junction Temperature

( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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IRFR/U12N25DPbF

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

Driver Gate Drive

P.W.

Period

D =

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET^®Power MOSFETs

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IRFR/U12N25DPbF

D-Pak (TO-252AA) Package Outline

D-Pak (TO-252AA) Part Marking Information

EXAMPLE: THIS IS AN IRFR120

PART NUMBER

WIT H AS S EMBLY

LOT CODE 1234

INTERNATIONAL

RECTIFIER

LOGO

DATE CODE

YEAR 9 = 1999

WEEK 16

IRFU120

916A

AS SEMBLED ON WW 16, 1999

IN THE ASSEMBLY LINE "A"

LINE A

Note: "P" in assembly line position

ASSEMBLY

LOT CODE

indicates "L ead-F ree"

PART NUMBER

DATE CODE

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

INTERNATIONAL

RECTIFIER

LOGO

IRFU120

12 34

YEAR 9 = 1999

ASSEMBLY

LOT CODE

WEEK 16

A = ASSEMBLYSITE CODE

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IRFR/U12N25DPbF

I-Pak (TO-251AA) Package Outline

I-Pak (TO-251AA) Part Marking Information

PART NUMBER

EXAMPLE: THIS IS AN IRFU120

INTERNATIONAL

WIT H AS S E MB L Y

DAT E CODE

YEAR 9 = 1999

WE E K 19

RECTIFIER

LOGO

IRFU120

919A

LOT CODE 5678

AS SEMBLED ON WW 19, 1999

IN THE ASSEMBLY LINE "A"

LINE A

AS S E MB L Y

LOT CODE

Note: "P" in assembly line

position indicates "Lead-Free"

PART NUMBER

DAT E CODE

INTERNATIONAL

RECTIFIER

LOGO

IRFU120

56 78

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

YEAR 9 = 1999

AS S E MB LY

LOT CODE

WEE K 19

A = AS S E MB L Y S IT E CODE

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IRFR/U12N25DPbF

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature.

ꢀ C_osseff. is a fixed capacitance that gives the same charging time

Starting T_J= 25°C, L = 7.1mH

R_G= 25Ω, I_AS= 8.4A.

as C_osswhile V_DSis rising from 0 to 80% V_DSS

I_SD≤ 8.4A, di/dt ≤ 150A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/04

www.irf.com

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/

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