IRFU2605 [INFINEON]
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A); 功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.075ohm ，ID = 19A）
| 型号： | IRFU2605 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A) |
| 文件： | 总8页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Previous Datasheet
Index
Next Data Sheet
PD - 9.1253
IRFR2605
IRFU2605
HEXFET® Power MOSFET
Ultra Low On-Resistance
ESD Protected
D
Surface Mount (IRFR2605)
Straight Lead (IRFU2605)
150°C Operating Temperature
Repetitive Avalanche Rated
Fast Switching
VDSS = 55V
RDS(on) = 0.075Ω
ID = 19A
G
Description
S
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques that achieve extremely low on-resistance per silicon area
and allow electrostatic discharge protection to be integrated in the gate structure.
These benefits, combined with the ruggedized device design that HEXFETs are
known for, provide the designer with extremely efficient and reliable device for use
in a wide variety of applications.
D-PAK
TO-252AA
I-PAK
TO-251AA
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 watts are possible in
typical surface mount applications.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
19
12
A
76
PD @TC = 25°C
PD @TC = 25°C
Power Dissipation
50
W
Power Dissipation (PCB Mount)**
Linear Derating Factor
3.1
0.40
0.025
±20
100
12
W/°C
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
VGS
V
mJ
A
EAS
Single Pulse Avalanche Energy
Avalanche Current
IAR
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
5.0
4.5
mJ
V/ns
dv/dt
TJ, TSTG
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Human Body Model, 100pF, 1.5KΩ
-55 to + 150
300 (1.6mm from case)
2000
°C
V
VESD
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
2.5
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
—
—
40
°C/W
—
—
62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
To Order
Previous Datasheet
Index
Next Data Sheet
IRFR2605
IRFU2605
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
––– 0.051 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.085
2.0 ––– 4.0
3.6 ––– –––
––– ––– 25
––– ––– 250
––– ––– 10
––– ––– -10
––– ––– 23
––– ––– 5.4
––– ––– 10
––– 7.1 –––
––– 56 –––
––– 31 –––
––– 39 –––
Ω
V
S
VGS = 10V, ID = 11A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 11A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 125°C
VGS = 20V
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 11A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 25V
ID = 11A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 20Ω
RD = 2.2Ω, See Fig. 10
D
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
G
nH
pF
from package
and center of die contact
S
Ciss
Coss
Crss
Input Capacitance
––– 420 –––
––– 250 –––
––– 67 –––
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
––– –––
18
showing the
G
A
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– –––
72
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 67 100
––– 0.18 0.26
V
TJ = 25°C, IS = 11A, VGS = 0V
TJ = 25°C, IF = 11A
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD ≤ 11A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
VDD = 25V, starting TJ = 25°C, L = 830µH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 11A. (See Figure 12)
To Order
Previous Datasheet
Index
Next Data Sheet
IRFR2605
IRFU2605
100
100
10
1
VGS
VGS
15V
TOP
15V
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
10
4.5V
4.5V
1
20µs PULSE WIDTH
20µs PULSE WIDTH
T
C
= 25°C
T
= 150°C
C
0.1
0.01
0.1
0.01
A
A
0.1
1
10
1 00
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
TC = 25oC
TC = 150oC
100
10
1
2.0
1.5
1.0
0.5
0.0
I
= 19A
D
TJ = 25°C
TJ = 150°C
VDS = 25V
20µs PULSE WIDTH
V
= 10V
GS
10A
A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
To Order
Previous Datasheet
Index
Next Data Sheet
IRFR2605
IRFU2605
1000
20
16
12
8
I
= 11A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
V
V
= 44V
= 26V
= C + C
DS
DS
ds
gd
800
600
400
200
0
C
iss
C
oss
4
C
rss
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
100
0
5
10
15 20
25
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 150°C
J
T = 25°C
J
10µs
100µs
1ms
T
T
= 25°C
= 150°C
C
J
V
GS
= 0V
Single Pulse
A
0.1
1
0.1
A
1000
0.0
0.4
0.8
1.2
1.6
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
To Order
Previous Datasheet
Index
Next Data Sheet
IRFR2605
IRFU2605
RD
VDS
VGS
20
16
12
8
D.U.T.
RG
VDD
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
0
A
150
25
50
75
100
125
T , Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.02
0.1
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
N o tes:
1 . D u ty fa ctor D
=
t
/ t
2
1
2 . P e ak T = P
x Z
+ T
C
D M
J
thJC
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
To Order
Previous Datasheet
Index
Next Data Sheet
IRFR2605
IRFU2605
200
160
120
80
I
D
TOP
4.9A
7.0A
BOTTOM 11A
10 V
Fig 12a. Unclamped Inductive Test Circuit
40
V
= 25V
50
DD
0
A
150
25
75
100
125
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
10
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
To Order
Previous Datasheet
Index
Next Data Sheet
IRFR2605
IRFU2605
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T
• Low Leakage Inductance
Current Transformer
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
To Order
Previous Datasheet
Index
Next Data Sheet
IRFR2605
IRFU2605
Package Outline
D-PAK Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
5.46 (.215)
0.58 (.023)
0.46 (.018)
0.88 (.035)
5.21 (.205)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIGNMENTS
1 - GATE
1
2
3
0.51 (.020)
MIN.
2 - DRAIN
- B -
3 - SOURCE
4 - DRAIN
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M A M B
NOTES:
2.28 (.090)
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
4.57 (.180)
CONFORMS TO JEDEC OUTLINE TO-252AA.
DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
Part Marking Information
D-PAK
EXAMPLE : THIS IS AN IRFR120
WITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 9U1P
FIRST PORTION
OF PART NUMBER
IRFR
120
9U 1P
SECOND PORTION
OF PART NUMBER
ASSEMBLY
LOT CODE
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
To Order
相关型号：
©2020 ICPDF网 联系我们和版权申明