IRFU3412 [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRFU3412 |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总10页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94373
IRFR3412
IRFU3412
HEXFET® Power MOSFET
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Motor Drive
VDSS
RDS(on) max
ID
100V
0.025Ω
48A
l
l
Bridge Converters
All Zero Voltage Switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
D-Pak
IRFR3412
I-Pak
IRFU3412
Absolute Maximum Ratings
Parameter
Max.
48
34
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
190
PD @TC = 25°C
Power Dissipation
140
W
W/°C
V
Linear Derating Factor
0.95
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 20
Peak Diode Recovery dv/dt
Operating Junction and
6.4
V/ns
°C
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 second
Mounting torqe, 6-32 or M3 screw
300(1.6mm from case )
10 lbf•in (1.1N•m)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
Continuous Source Current
(Body Diode)
––– ––– 48
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 190
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
––– ––– 1.3
––– 68 100
––– 160 240
––– 4.5 6.8
V
TJ = 25°C, IS = 29A, VGS = 0V
TJ = 125°C, IF = 29A
ns
Qrr
IRRM
ton
nC di/dt = 100A/µs
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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1
1/22/02
IRFR/U3412
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.025
3.5 ––– 5.5
Ω
VGS = 10V, ID = 29A
V
VDS = VGS, ID = 250µA
––– ––– 1.0
––– ––– 250
––– ––– 100
––– ––– -100
VDS = 95V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 20V
IGSS
V
GS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
25 ––– –––
––– 59
Conditions
gfs
S
VDS = 50V, ID = 29A
ID = 29A
Qg
89
32
26
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
21
17
nC VDS = 50V
VGS = 10V,
19 –––
68 –––
44 –––
37 –––
VDD = 50V
ID = 29A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.8Ω
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 3430 –––
––– 270 –––
––– 150 –––
––– 1040 –––
––– 170 –––
––– 270 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V ꢀ
Coss eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
–––
Max.
160
29
Units
mJ
EAS
IAR
A
EAR
Repetitive Avalanche Energy
14
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.05
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
110
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See Fig. 11)
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 0.38mH, RG = 25Ω,
IAS = 29A, (See Figure 12a)
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
ISD ≤ 29A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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IRFR/U3412
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
1
4.5V
0.1
0.01
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 175
J
C
T = 25
J
C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
3.0
48A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
10
°
T = 25 C
J
1
V
= 25V
DS
V
= 10V
GS
20µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
4.0
5.0
6.0
7.0 8.0
9.0
°
T , Junction Temperature
( C)
V
, Gate-to-Source Voltage (V)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFR/U3412
20
16
12
8
100000
V
= 0V,
f = 1 MHZ
I = 29A
GS
D
C
= C
+
C
,
C
iss
gs
gd
ds
V
= 80V
DS
SHORTED
VDS= 50V
VDS= 20V
C
= C
gd
rss
C
= C + C
oss
ds gd
10000
1000
100
Ciss
Coss
Crss
4
0
0
20
40
60
80
100
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100.0
10.0
1.0
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U3412
RD
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
( C)
T
, Case Temperature
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U3412
300
250
200
150
100
50
15V
I
D
TOP
12A
21A
29A
BOTTOM
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
°
( C)
Starting T , Junction Temperature
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFR/U3412
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFR/U3412
TO-252AA (D-Pak) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
5.46 (.215)
0.58 (.023)
0.46 (.018)
0.88 (.035)
5.21 (.205)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
0.51 (.020)
MIN.
- B -
3 - SOURCE
4 - DRAIN
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M A M B
NOTES:
2.28 (.090)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
4.57 (.180)
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
TO-252AA (D-Pak) Part Marking Information
EXA
THIS
MPLE:
IS AN IRFR120
PART NUMBER
DATE CODE
WIT
H ASSEMBLY
INTERNATIONAL
RECTIFIER
LOT CODE 1234
IRFU120
916A
ASSEMBLED ON WW 16
, 1999
YEA
R 9 = 1999
L
OGO
IN THE ASSEMBLY LINE "A"
1
3
4
2
WEEK 16
LINE A
ASSEMBLY
LOT CODE
8
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IRFR/U3412
TO-251AA (I-Pak) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
- A -
0.58 (.023)
0.46 (.018)
1.27 (.050)
5.46 (.215)
0.88 (.035)
5.21 (.205)
LEAD ASSIGNMENTS
1 - GATE
4
2 - DRAIN
6.45 (.245)
5.68 (.224)
3 - SOURCE
4 - DRAIN
6.22 (.245)
5.97 (.235)
1.52 (.060)
1.15 (.045)
1
2
3
- B -
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
2.28 (.090)
1.91 (.075)
9.65 (.380)
8.89 (.350)
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.76 (.030)
1.14 (.045)
0.89 (.035)
3X
0.89 (.035)
0.64 (.025)
3X
0.25 (.010)
M A M B
0.58 (.023)
0.46 (.018)
2.28 (.090)
2X
TO-251AA (I-Pak) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFR120
INTERNATIONAL
WITH ASSEMBLY
DATE CODE
YEAR 9 = 1999
WEEK 19
RECTIFIER
IRFU120
919A
78
LOT
CODE 5678
L
OGO
ASSEMB
LED ON WW 19, 1999
56
IN THE ASSE
MBLY LINE "A"
LINE A
ASSEMBLY
LOT CODE
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9
IRFR/U3412
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/02
10
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