IRFY044C [INFINEON]

POWER MOSFET; 功率MOSFET


型号：	IRFY044C
厂家：	Infineon
描述：	POWER MOSFET 功率MOSFET 晶体晶体管
文件：	总7页 (文件大小：161K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91285D

IRFY044C,IRFY044CM

60V, N-CHANNEL

POWER MOSFET

THRU-HOLE (TO-257AA)

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number RDS(on)

Eyelets

Ceramic

IRFY044C

0.040 Ω 16*A

IRFY044CM

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-257AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Ideally Suited For Space Level

Applications

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C Continuous Drain Current

16*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

156

@ T = 25°C

100

W/°C

Linear Derating Factor

0.8

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

100

16*

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

4.5

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300(0.063in./1.6mm from case for 10 sec)

4.3 (Typical)

* Current is limited by pin diameter

For footnotes refer to the last page

www.irf.com

4/18/01

IRFY044C, IRFY044CM

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

—

= 0V, I = 1.0mA

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.68

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

0.04

Ω

= 10V, I = 16A

GS D

DS(on)

➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0

—

4.0

—

= V , I = 250µA

GS(th)

Ω

S ( )

> 15V, I

= 16A ➀

250

= 48V ,V =0V

DSS

DS GS

µA

—

= 48V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

6.8

100

-100

= 20V

= -20V

GSS

=10V, I = 16A

GS D

d(on)

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

FallTime

= 30V

= 30V, I = 16A,

130

= 9.1Ω

d(off)

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

+ L

Total Inductance

—

Input Capacitance

Output Capacitance

—

2400

1100

230

—

= 0V, V

= 25V

iss

oss

rss

f = 1.0MHz

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

16*

156

2.5

T = 25°C, I = 16A, V

= 0V ➀

Reverse Recovery Time

220

1.6

µC

T = 25°C, I = 16A, di/dt ≤ 100A/µs

Reverse Recovery Charge

≤ 50V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

* Current is limited by pin diameter

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Case-to-sink

Junction-to-Ambient

—

0.21

—

1.25

—

thJC

thCS

thJA

°C/W

Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

IRFY044C, IRFY044CM

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

16A

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

IRFY044C, IRFY044CM

16A

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRFY044C, IRFY044CM

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRFY044C, IRFY044CM

15V

DRIVER

D S

D.U .T

D D

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)D SS

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

10 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRFY044C, IRFY044CM

Foot Notes:

➀➀ I

≤ 16A, di/dt ≤ 100A/µs,

≤ 60V, T ≤ 150°C

➀➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➀➀➀V

= 25V, starting T = 25°C, L= 0.78mH

Peak I = 16A, V

= 10V

Case Outline and Dimensions —TO-257AA

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/01

www.irf.com

IRFY044C [INFINEON]

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