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元器件品牌
IRFY110
[SEME-LAB]
N-Channel MOSFET in a Hermetically sealed; N沟道MOSFET在一个密封
元器件型号：
IRFY110
生产厂家：
SEME LAB
描述和应用：
N-Channel MOSFET in a Hermetically sealed
N沟道MOSFET在一个密封
PDF文件：
总1页 (文件大小：15K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFY110参数
查看货源
IRFY110C
N-Channel
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9
ETC
IRFY110C
N-Channel MOSFET in a Hermetically sealed
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10
SEME-LAB
IRFY11N50CMA
HEXFET POWER MOSFET THRU-HOLE (TO-257AA)
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12
IRF
IRFY11N50CMA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-257AA
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12
ETC
IRFY120
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
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156
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20
SEME-LAB
IRFY120(M)
100V, 0.31ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
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0
IRF
IRFY120C
N-Channel
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9
ETC
IRFY120C
N-Channel MOSFET in a Hermetically sealed
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13
SEME-LAB
IRFY120M
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7.4A I(D) | TO-220
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79
ETC
IRFY120SM
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | CHIP
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156
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5
ETC
IRFY130
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
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156
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32
SEME-LAB
IRFY130
Simple Drive Requirements Ease of Paralleling Hermetically Sealed
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11
IRF
IRFY130C
N-Channel MOSFET in a Hermetically sealed
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10
SEME-LAB
IRFY130C
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA
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13
ETC
IRFY130C
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
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0
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