IRFY340MEBPBF [INFINEON]
Power Field-Effect Transistor, 6.9A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB;
| 型号： | IRFY340MEBPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 6.9A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总7页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94189
IRFY340,IRFY340M
400V, N-CHANNEL
POWER MOSFET
THRU-HOLE (TO-257AA)
HEXFET® MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on)
ID
Eyelets
Glass
IRFY340
0.55 Ω
0.55 Ω
8.7A
8.7A
IRFY340M
Glass
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-257AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Glass Eyelets
For Space Level Applications
Refer to Ceramic Version Part
Numbers IRFY340C, IRFY340CM
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C Continuous Drain Current
8.7
5.5
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
C
D
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
35
DM
@ T = 25°C
P
100
W
W/°C
V
D
C
Linear Derating Factor
0.8
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
520
mJ
A
AS
I
8.7
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
10
mJ
V/ns
AR
dv/dt
4.0
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300(0.063in./1.6mm from case for 10 sec)
3.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
4/18/01
IRFY340, IRFY340M
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
400
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.46
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.55
Ω
V = 10V, I = 5.5A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
4.9
—
—
—
—
—
4.0
—
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> 15V, I
= 5.5A ➀
DS
I
25
250
V
= 320V ,V =0V
DSS
DS GS
µA
—
V
= 320V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
65
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=10V, I = 8.7A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
10
40.5
25
V
= 200V
DS
t
t
t
t
V
DD
= 200V, I = 8.7A,
D
92
79
R
= 9.1Ω
G
ns
d(off)
f
58
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
L
+ L
Total Inductance
—
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
—
—
—
1400
350
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
230
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
8.7
35
1.5
600
5.6
S
A
SM
V
T = 25°C, I = 8.7A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
nS
µC
T = 25°C, I = 8.7A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
V
DD
≤ 50V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-sink
—
—
—
—
0.21
—
1.25
—
thJC
thCS
thJA
°C/W
Junction-to-Ambient
80
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRFY340, IRFY340M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
ID=8.7A
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
www.irf.com
3
IRFY340, IRFY340M
8.7A
13a
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
www.irf.com
IRFY340, IRFY340M
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFY340, IRFY340M
15V
DRIVER
L
V
D S
D.U .T
AS
.
R
G
+
-
V
D D
I
A
20V
1
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
0
1V
Q
G
.3µF
10 V
+
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRFY340, IRFY340M
Footnotes:
➀➀ I
SD
≤ 8.7A, di/dt ≤ 120A/µs,
➀➀ Repetitive Rating; Pulse width limited by
V
≤ 400V, T ≤ 150°C
maximum junction temperature.
DD
J
➀➀➀V
= 50V, starting T = 25°C, L= 13mH
J
DD
Peak I = 8.7A, V
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
= 10V
L
GS
Case Outline and Dimensions —TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/01
www.irf.com
7
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