IRFY420 [SEME-LAB]
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.; N沟道MOSFET在密封to257AB金属封装。
| 型号： | IRFY420 |
| 厂家： | 
SEME LAB |
| 描述： | N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. |
| 文件： | 总1页 (文件大小：15K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
IRFY420C
N-Channel MOSFET in a Hermetically sealedWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
SEME-LAB
IRFY420SM
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | CHIPWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
ETC
IRFY430
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
SEME-LAB
IRFY430C
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
SEME-LAB
IRFY430C
POWER MOSFET THRU-HOLE (TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IRFY430CM
POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IRFY430CSCX
Power Field-Effect Transistor, 3.7A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IRFY430M
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
SEME-LAB
IRFY430M-T257
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
SEME-LAB
IRFY430ME
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IRFY430MEBPBF
Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IRFY430MEDPBF
Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IRFY430MEPBF
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IRFY440
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
SEME-LAB
IRFY440-T257
N-CHANNEL POWER MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
SEME-LAB
IRFY440C
N-Channel MOSFET in a Hermetically sealedWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
SEME-LAB
IRFY440CM
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IRFY440CMPBF
Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IRFY440CMSCS
Power Field-Effect Transistor, 7A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IRFY440CMSCX
Power Field-Effect Transistor, 7A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
©2020 ICPDF网 联系我们和版权申明