IRFY440CMSCS [INFINEON]

Power Field-Effect Transistor, 7A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA;


型号：	IRFY440CMSCS
厂家：	Infineon
描述：	Power Field-Effect Transistor, 7A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总6页 (文件大小：269K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No. PD 9.1292B

HEXFET^®POWER MOSFET

IRFY440CM

N-CHANNEL

500 Volt, 0.85Ω HEXFET

Product Summary

HEXFET technology is the key to International Rectifier’s

advanced line of power MOSFET transistors. The effi-

cient geometry design achieves very low on-state re-

sistance combined with high transconductance.

Part Number

DSS

DS(on)

IRFY440CM

500V

0.85Ω

7.0A

HEXFET transistors also feature all of the well-estab-

lished advantages of MOSFETs, such as voltage con-

trol, very fast switching, ease of paralleling and electri-

cal parameter temperature stability.They are well-suited

for applications such as switching power supplies, mo-

tor controls, inverters, choppers, audio amplifiers, high

energy pulse circuits, and virtually any application where

high reliability is required.

Features

n Hermetically sealed

n Electrically isolated

n Simple Drive Requirements

n Ease of Paralleling

n Ceramic eyelets

The HEXFET transistor’s totally isolated package elimi-

nates the need for additional isolating material between

the device and the heatsink.This improves thermal effi-

ciency and reduces drain capacitance.

Absolute Maximum Ratings

Parameter

IRFY440CM

Units

@ V =10V, T = 25°C

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

7.0

4.4

@ V =10V, T = 100°C

@ T = 25°C

100

0.8

±20

W/Kꢀ

Single Pulse Avalance Energy

Avalance Current

510

7.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

3.5

V/ns

-55 to 150

Storage Temperature Range

°C

stg

LeadTemperature

Weight

300 (0.063 in (1.6mm) from case for 10 sec)

4.3(typical)

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IRFY440CM Device

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

500

—

= 0V, I = 1.0mA

DSS

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

0.78

DSS

Static Drain-to-Source

—

0.85

0.95

4.0

—

= 10V, I = 4.4A

DS(on)

Ω

On-State Resistance

= 10V, I = 7.0A

Gate Threshold Voltage

ForwardTransconductance

Zero Gate Voltage Drain Current

2.0

4.7

—

= V , I

250µA

GS(th)

Ω

S ( )

≥ 15V, I

= 4.4A

VDS = 0.8 x max. rating,VGS = 0V

DSS

µA

—

250

= 0.8 x max. rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

8.7

100

-100

68.5

12.5

42.4

= 20V

GSS

= -20V

GSS

27.3

2.0

11.1

—

= 10V, I = 7.0A

= Max. Rating x 0.5

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On DelayTime

see figures 6 and 13

= 250V, I = 7.0A, R = 9.1Ω

d(on)

Rise Time

—

= 10V

Turn-Off Delay Time

—

d(off)

Fall Time

—

see figure 10

Internal Drain Inductance

—

Measured from the drain

lead, 6mm (0.25 in.) from

package to center of die.

symbol

Modified MOSFET

showing the internal

inductances.

Internal Source Inductance

—

8.7

—

Measured from the

source lead, 6mm (0.25

in.) from package to

source bonding pad.

Input Capacitance

—

1300

310

—

= 0v, V = 25V

iss

f = 1.0MHz.

see figure 5

Output Capacitance

oss

rss

ReverseTransfer Capacitance

120

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

symbol showing the

Modified MOSFET

integral reverse p-n junction rectifier.

Continuous Source Current (Body Diode)

—

7.0

Pulse Source Current (Body Diode)

Diode ForwardVoltage

Reverse RecoveryTime

Reverse Recovery Charge

—

1.5

700

8.9

T = 25°C, I = 7.0A, V

= 0V

ns T = 25°C, I = 7.0A, di/dt ≤ 100 A/µs

µC

≤ 50 V

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Junction-to-Ambient

Case-to-Sink

—

1.25

thJC

thJA

thCS

K/W

Typical socket mount

0.21

—

Mounting surface flat, smooth

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IRFY440CM Device

Fig. 1 — Typical Output Characteristics

T_C= 25°C

Fig. 2 —Typical Output Characteristics

T_C= 150°C

Fig. 3 — Typical Transfer Characteristics

Fig. 4 — Normalized On-Resistance Vs.Temperature

Fig. 5 — Typical Capacitance Vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge Vs. Gate-to-Source

Voltage

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IRFY440CM Device

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Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

Fig. 8 — Maximum Safe Operating Area

1 5 0

2 5

5 0

7 5

1 0 0

1 2 5

, C ase Te m p era tu re (°C )

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 10a — Switching Time Test Circuit

Fig. 10b — Switching Time Waveforms

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IRFY440CM Device

= 0.50

0 .2 0

0 .1 0

0.05

0.1

0.02

0.01

SIN G LE P U LSE

(T H ER M A L R ESP ON S E)

0.01

0.00001

0.0001

0.001

0.01

0.1

, R ectangu lar P ulse D ura tion (se c)

Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

(BR)DSS

D R IVE R

D S

D .U .T

D D

A S

Ω

0.01

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 12b — Unclamped Inductive Waveforms

Fig. 12c — Max. Avalanche Energy vs. Current

Fig. 13a — Gate ChargeTest Circuit

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Notes:

Repetitive Rating; Pulse width limited by maximum junc-

tion

temperature (see figure 11).

@ V

= 50V, Starting T = 25°C,

= [0.5

(

)

[BV

/(BV

-V )]

DSS DD

DSS

Peak I = 7A, V

= 10V, 25 ≤ R ≤ 200Ω

≤ 7.0A, di/dt ≤ 100A/µs, V

≤ BV

, T ≤ 150°C

DSS J

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

ꢀ K/W = °C/W W/K = W/°C

Fig. 13b — Basic Gate Charge Waveform

Case Outline and Dimensions

Pin 1 - Drain

Pin 2 - Source

Pin 3 - Gate

TO-257AA

NON-STANDARD PIN CONFIGURATION

NOTES:

Pin 1 - Gate

Pin 2 - Drain

Pin 3 - Source

1. Dimensioning and tolerancing per ANSI Y14.5M-1982

2. Controlling dimension: Inch

3. Dimensions are shown in millimeters (Inches)

4. Outline conforms to JEDEC outline TO-257AA

Order Part Type IRFY440C

CAUTION

BERYLLIAWARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted,

machined or have other operations performed on them which

will produce beryllia or beryllium dust.Furthermore, beryllium

oxide packages shall not be placed in acids that will produce

fumes containing beryllium.

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IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

To Order

IRFY440CMSCS [INFINEON]

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