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IRFY9120 [SEME-LAB]

P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package; P沟道MOSFET在密封TO257AB金属封装
IRFY9120
型号: IRFY9120
厂家: SEME LAB    SEME LAB
描述:

P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package
P沟道MOSFET在密封TO257AB金属封装

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文件: 总1页 (文件大小:14K)
中文:  中文翻译
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相关型号:

IRFY9120(M)

100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA

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INFINEON

IRFY9120(M)PBF

100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA

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INFINEON

IRFY9120C

P-Channel MOSFET in a Hermetically sealed

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SEME-LAB

IRFY9120M

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.3A I(D) | TO-220

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ETC

IRFY9120MPBF

Power Field-Effect Transistor, 5.3A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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INFINEON

IRFY9130

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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SEME-LAB

IRFY9130C

POWER MOSFET THRU-HOLE (TO-257AA)100V, P-CHANNEL HEXFET㈢ MOSFET TECHNOLOGY

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INFINEON

IRFY9130C

P-Channel MOSFET in a Hermetically sealed

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SEME-LAB

IRFY9130CM

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.3ohm, Id=-11.2A)

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INFINEON

IRFY9130CMPBF

Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

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IRFY9130CMSCV

-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TXV

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INFINEON

IRFY9130CMSCX

-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX

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INFINEON

IRFY9130CSCS

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.31ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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INFINEON

IRFY9130CSCX

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.31ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,

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INFINEON

IRFY9130M

P-Channel MOSFET in a Hermetically sealed

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SEME-LAB

IRFY9130MEAPBF

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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INFINEON

IRFY9130MEB

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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INFINEON

IRFY9130MEBPBF

暂无描述

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INFINEON

IRFY9130MEDPBF

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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INFINEON

IRFY9140

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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SEME-LAB