IRFZ44NS [INFINEON]
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A); 功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.0175ohm ，ID = 49A ）
| 型号： | IRFZ44NS |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) |
| 文件： | 总10页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94153
IRFZ44NS
IRFZ44NL
l Advanced Process Technology
l Surface Mount (IRFZ44NS)
l Low-profilethrough-hole(IRFZ44NL)
l 175°C Operating Temperature
l Fast Switching
HEXFET® Power MOSFET
D
VDSS = 55V
l Fully Avalanche Rated
Description
RDS(on) = 0.0175Ω
G
AdvancedHEXFET® PowerMOSFETsfromInternational
Rectifierutilizeadvancedprocessingtechniquestoachieve
extremelylowon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
devicedesignthatHEXFETpowerMOSFETsarewellknown
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
ID = 49A
S
The D2Pak is a surface mount power package capable of
accommodatingdiesizesuptoHEX-4.Itprovidesthehighest
power capability and the lowest possible on-resistance in
anyexistingsurfacemountpackage.TheD2Pakissuitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typicalsurfacemountapplication.
2
T O -262
D
Pak
Thethrough-holeversion(IRFZ44NL)isavailableforlow-
profileapplications.
Absolute Maximum Ratings
Parameter
Max.
49
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
35
A
160
3.8
94
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
Linear Derating Factor
0.63
± 20
25
W/°C
V
VGS
IAR
Gate-to-Source Voltage
Avalanche Current
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
9.4
5.0
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.5
Units
RθJC
RθJA
Junction-to-Ambient
–––
40
°C/W
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1
03/13/01
IRFZ44NS/IRFZ44NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ VGS = 10V, ID = 25A
Gate Threshold Voltage
2.0
19
––– 4.0
V
S
VDS = VGS, ID = 250µA
Forward Transconductance
––– –––
VDS = 25V, ID = 25A
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 63
––– ––– 14
––– ––– 23
VDS = 55V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
Qgs
Qgd
td(on)
tr
ID = 25A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
–––
12 –––
60 –––
44 –––
45 –––
7.5 –––
VDD = 28V
ID = 25A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 12Ω
VGS = 10V, See Fig. 10
LS
Internal Source Inductance
nH Between lead,
and center of die contact
Ciss
Coss
Crss
EAS
Input Capacitance
––– 1470 –––
––– 360 –––
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
88 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 530ꢀ150 mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
49
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 160
––– ––– 1.3
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
TJ = 25°C, IS = 25A, VGS = 0V
TJ = 25°C, IF = 25A
––– 63
––– 170 260
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
95
ns
Qrr
ton
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
max. junction temperature. (See fig. 11)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀThis is a typical value at device destruction and represents
operation outside rated limits.
Starting TJ = 25°C, L = 0.48mH
RG = 25Ω, IAS = 25A. (See Figure 12)
This is a calculated value limited to TJ = 175°C .
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
www.irf.com
IRFZ44NS/IRFZ44NL
1000
100
10
1000
VGS
15V
VGS
TOP
TOP
15V
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
100
10
1
4.5V
4.5V
20µs P ULSE W IDTH
T = 25°C
20µs PULS E W IDTH
T = 175°C
C
J
15
C
J
1
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
1000
100
10
I
= 41A
D
2.0
1.5
1.0
0.5
0.0
TJ = 25°C
TJ = 175°C
VDS = 25V
20µs PULSE W IDTH
V
= 10V
G S
1
A
10 A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
4
5
6
7
8
9
T
J
, Junction Temperature (°C)
VG S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFZ44NS/IRFZ44NL
20
16
12
8
2500
I = 25A
D
V
C
C
C
= 0V ,
f = 1MHz
G S
iss
= C
+ C
+ C
,
C
SHORTED
V
V
= 44V
= 28V
gs
gd
ds
D S
D S
= C
= C
rss
oss
gd
ds
gd
2000
1500
1000
500
0
C
C
iss
oss
C
rss
4
FOR TE ST CIRCUIT
S EE FIGURE 13
0
A
A
0
10
20
30
40
50
60
70
1
10
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
OPE RATION IN THIS AREA LIMITE D
BY R DS(on)
100
10
1
10µs
100
10
1
T
= 175°C
J
100µs
T
= 25°C
J
1m s
10m s
T
T
= 25°C
= 175°C
C
J
S ingle Pulse
V
= 0V
G S
A
A
1
10
100
0.5
1.0
1.5
2.0
2.5
3.0
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFZ44NS/IRFZ44NL
RD
VDS
VGS
50
40
30
20
10
0
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
25
50
75
100
125
150
175
V
°
, Case Temperature ( C)
GS
T
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
0.10
P
2
DM
0.05
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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5
IRFZ44NS/IRFZ44NL
500
400
300
200
100
0
I
D
L
TO P
10A
18A
25A
V
DS
B OTTOM
D.U.T.
R
+
-
G
V
DD
I
10V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
= 25V
50
DD
A
25
75
100
125
150
175
V
DD
Starting T , Junction Temperature (°C)
J
V
DS
Fig 12c. Maximum Avalanche Energy
I
AS
Vs. DrainCurrent
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
Q
G
.3µF
10 V
+
V
DS
Q
D.U.T.
-
GS
GD
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFZ44NS/IRFZ44NL
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig14. ForN-ChannelHEXFETS
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7
IRFZ44NS/IRFZ44NL
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
MAX.
- A -
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIMENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
YY
=
YEAR
= W EEK
LOT CODE
W W
8
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IRFZ44NS/IRFZ44NL
Package Outline
TO-262Outline
Part Marking Information
TO-262
www.irf.com
9
IRFZ44NS/IRFZ44NL
Tape & Reel Information
D2Pak
TRR
1 .6 0 (.063 )
1 .5 0 (.059 )
1.60 (.06 3)
1.50 (.05 9)
4.10 (.16 1)
3.90 (.15 3)
0.3 68 (.0145)
0.3 42 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.07 3)
1.65 (.06 5)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.42 9)
10.70 (.42 1)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M A X.
60.00 (2.362)
MIN .
30.40 (1.197)
M AX.
NO TES :
1. CO MFO RMS TO EIA-418.
2. CO N TR O LLIN G D IM ENSIO N : M ILLIM ET ER .
3. DIMENSIO N MEASUR ED
26.40 (1.039)
24.40 (.961)
4
@ HU B.
3
4. INC LUD ES FLAN G E D ISTO R TIO N
@
O UTER EDG E.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
10
www.irf.com
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