IRFZ44S [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFZ44S |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.893A
IRFZ44S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRFZ44S)
l Low-profile through-hole (IRFZ44L)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 60V
RDS(on) = 0.028Ω
G
ID = 50A
S
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44L) is available for low-
profile applications.
2
D
Pa k
T O -2 6 2
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
50
36
A
200
3.7
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
150
1.0
Linear Derating Factor
W/°C
V
VGS
EAS
dv/dt
TJ
Gate-to-Source Voltage
± 20
100
4.5
Single Pulse Avalanche Energyꢀ
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
mJ
V/ns
-55 to + 175
°C
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.0
Units
RθJC
RθJA
°C/W
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
8/25/97
IRFZ44S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID =1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.028
Ω
V
S
VGS =10V, ID = 31A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 31Aꢀ
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
15
––– 4.0
––– –––
Forward Transconductance
––– –––
25
IDSS
Drain-to-Source Leakage Current
µA
nA
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 67
––– ––– 18
––– ––– 25
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 51A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 10V, See Fig. 6 and 13 ꢀ
–––
14 –––
VDD = 30V
––– 110 –––
ID = 51A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
45 –––
92 –––
RG = 9.1Ω
RD = 0.55Ω, See Fig. 10
Between lead,
and center of die contact
VGS = 0V
LS
Internal Source Inductance
nH
pF
–––
–––
7.5
Ciss
Coss
Crss
Input Capacitance
––– 1900 –––
––– 920 –––
––– 170 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
––– –––
50
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
200
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 2.5
––– 120 180
––– 530 800
V
TJ = 25°C, IS = 51A, VGS = 0V
TJ = 25°C, IF = 51A
ns
Qrr
ton
nC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRFZ44 data and test conditions
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 44µH
RG = 25Ω, IAS = 51A. (See Figure 12)
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
ISD ≤ 51A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFZ44S/L
IRFZ44S/L
IRFZ44S/L
IRFZ44S/L
IRFZ44S/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFZ44S/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
MAX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMM ENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
NOTES:
LEAD ASSIGNM ENTS
1 - GATE
1
2
3
4
DIM ENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOU RC E
DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMEN SION S DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
LOT CODE
YY = YEAR
W W = W EEK
IRFZ44S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
IRFZ44S/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3)
1 .5 0 (.0 5 9)
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 3)
0 .3 68 (.0 14 5 )
0 .3 42 (.0 13 5 )
F EED D IR EC TIO N
1 .8 5 (.0 7 3 )
11 .6 0 (. 45 7 )
11 .4 0 (. 44 9 )
1 .6 5 (.0 6 5 )
2 4 .30 (.9 5 7)
2 3 .90 (.9 4 1)
15 .4 2 (.60 9 )
15 .2 2 (.60 1 )
TR L
1. 75 (.0 69 )
1. 25 (.0 49 )
1 0. 90 (.4 29 )
1 0. 70 (.4 21 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6. 10 (.6 34 )
1 5. 90 (.6 26 )
FE ED D IR EC TION
1 3.5 0 (. 532 )
1 2.8 0 (. 504 )
2 7.4 0 (1 .079 )
2 3.9 0 (.9 41)
4
33 0.0 0
(14. 17 3)
M AX .
6 0.0 0 (2 .36 2)
M IN .
3 0.4 0 (1 .19 7)
M A X .
N O T ES
:
1. C O M F O R M S T O EIA -418 .
2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER .
3. D IM E N S IO N M EA S U R E D
4. IN C LU D E S F L AN G E D IS T O R T IO N
26 .40 (1. 03 9)
24 .40 (.9 61 )
4
@ H U B .
3
@
O U T E R ED G E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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