IRG4BC10KPBF [INFINEON]

Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3;


型号：	IRG4BC10KPBF
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 局域网栅功率控制晶体管
文件：	总9页 (文件大小：156K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91733A

IRG4BC10K

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Short Circuit Rated UltraFast: Optimized for high

operating frequencies >5.0 kHz , and Short Circuit

Rated to 10µs @ 125°C, V_GE= 15V

V_CES= 600V

• Generation 4 IGBT design provides higher efficiency

than Generation 3

V_{CE(on) typ.}= 2.39V

• Industry standard TO-220AB package

@V_GE= 15V, I_C= 5.0A

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

9.0

I_C@ T_C= 100°C

5.0

I_CM

I_LM

t_sc

µs

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm) from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Typ.

–––

0.5

Max.

3.3

–––

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

–––

2.0 (0.07)

–––

www.irf.com

4/24/2000

IRG4BC10K

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GE= 0V, I_C= 250µA

V_GE= 0V, I_C= 1.0A

V_(BR)CES

V_(BR)ECS

∆V_(BR)CES/∆T_JTemperature Coeff. of Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

600

—

Emitter-to-Collector Breakdown Voltage 18

—

3.0

—

1.2

—

0.58

V/°C V_GE= 0V, I_C= 1.0mA

2.39 2.62

I_C= 5.0A

V_GE= 15V

V_CE(ON)

V_GE(th)

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

3.25

2.63

—

I_C= 9.0A

See Fig.2, 5

I_C= 5.0A , T_J= 150°C

V_CE= V_GE, I_C= 250µA

6.5

—

∆V_GE(th)/∆T_JTemperature Coeff. of Threshold Voltage

-11

1.8

—

mV/°C V_CE= V_GE, I_C= 250µA

g_fe

Forward Transconductance ꢀ

—

V_CE= 50 V, I_C= 5.0A

V_GE= 0V, V_CE= 600V

250

2.0

1000

I_CES

Zero Gate Voltage Collector Current

µA

—

V_GE= 0V, V_CE= 10V, T_J= 25°C

V_GE= 0V, V_CE= 600V, T_J= 150°C

V_GE= 20V

—

I_GES

Gate-to-Emitter Leakage Current

—

100 nA

Switching Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

I_C= 5.0A

Q_g

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

—

Q_ge

Q_gc

t_d(on)

t_r

2.9 4.3

V_CC= 400V

V_GE= 15V

See Fig.8

9.8

—

T_J= 25°C

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

I_C= 5.0A, V_CC= 480V

V_GE= 15V, R_G= 100Ω

Energy losses include "tail"

190 290

E_on

E_off

E_ts

t_sc

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Short Circuit Withstand Time

0.16

0.10

—

mJ See Fig. 9,10,14

0.26 0.32

—

µs

V_CC= 400V, T_J= 125°C

V_GE= 15V, R_G= 100Ω , V_CPK< 500V

T_J= 150°C,

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

—

I_C= 5.0A, V_CC= 480V

V_GE= 15V, R_G= 100Ω

Energy losses include "tail"

Turn-Off Delay Time

Fall Time

350

0.47

7.5

220

E_ts

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

mJ See Fig. 10,11,14

L_E

Measured 5mm from package

C_ies

C_oes

C_res

V_GE= 0V

V_CC= 30V

ƒ = 1.0MHz

See Fig. 7

7.5

Notes:

Repetitive rating; V_GE= 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

Repetitive rating; pulse width limited by maximum

junction temperature.

ꢀ

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

V_CC= 80%(V_CES), V_GE= 20V, L = 10µH, R_G= 100Ω,

(See fig. 13a)

Pulse width 5.0µs, single shot.

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IRG4BC10K

For both:

Triangular wave:

Duty cycle: 50%

= 125°C

= 90°C

sink

Gate drive as specified

Power Dissipation = 9.2 W

Clamp voltage:

80% of rated

Square wave:

60% of rated

voltage

Ideal diodes

0.1

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I_RMSof fundamental)

100

T = 25 C

T = 150 C

T = 25 C

= 50V

= 15V

20µs PULSE WIDTH

5µs PULSE WIDTH

1.0

15 20

2.0

3.0

4.0

5.0 6.0 7.0

, Gate-to-Emitter Voltage (V)

, Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

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5µs PULSE WIDTH

IRG4BC10K

5.0

4.0

3.0

2.0

1.0

= 15V

80 us PULSE WIDTH

= 10A

= 2.5A

-60 -40 -20

20 40 60 80 100 120 140 160

100

125

150

, Junction Temperature ( C)

, Case Temperature ( C)

Fig. 4 - Maximum Collector Current vs. Case

Fig. 5 - Typical Collector-to-Emitter Voltage

Temperature

vs. Junction Temperature

D = 0.50

0.20

0.10

0.05

0.02

SINGLE PULSE

(THERMAL RESPONSE)

0.01

0.1

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T = P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4BC10K

400

300

200

100

= 0V,

f = 1MHz

= 400V

= 5.0A

= C + C

SHORTED

ies

gc ,

= C

res

= C + C

oes

ies

oes

res

100

, Collector-to-Emitter Voltage (V)

, Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Fig. 7 - Typical Capacitance vs.

Gate-to-Emitter Voltage

Collector-to-Emitter Voltage

0.28

0.26

0.24

0.22

0.20

= 480V

100Ω

= Ohm

= 15V

= 25

= 5A

= 480V

= 2.5A

0.1

-60 -40 -20

20 40 60 80 100 120 140 160

100

T , Junction Temperature ( C )

, Gate Resistance

( Ω )

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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IRG4BC10K

1.2

100

= Ohm

100 Ω

= 20V

= 125 ^oC

= 150 C

= 480V

= 15V

1.0

0.8

0.6

0.4

0.2

SAFE OPERATING AREA

100

1000

, Collector-to-Emitter Voltage (V)

, Collector Current (A)

Fig. 11 - Typical Switching Losses vs.

Fig. 12 - Turn-Off SOA

Collector Current

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IRG4BC10K

D.U.T.

480V

4 X I_C@25°C

R_L

50V

0 - 480V

1000V

480µF

960V

* Driver same type as D.U.T.; Vc = 80% of Vce(max)

* Note: Due to the 50V pow er supply, pulse width and inductor

w ill increase to obtain rated Id.

Fig. 13a - Clamped Inductive

Fig. 13b - Pulsed Collector

Current Test Circuit

Load Test Circuit

Fig. 14a - Switching Loss

D.U.T.

Driver*

Test Circuit

50V

1000V

* Driver same type

as D.U.T., VC = 480V

90%

10%

90%

Fig. 14b - Switching Loss

d (off)

Waveforms

10%

d(o n )

t=5µs

o ff

o n

= (E

)

o ff

o n

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IRG4BC10K

Case Outline and Dimensions TO-220AB

10.54 (.415)

3.78 (.149)

N O TE S :

- B -

10.29 (.405)

2.87 (.113)

2.62 (.103)

D IM E N S IO N S & T O LER A N C IN G

4.69 (.185)

4.20 (.165)

3.54 (.139)

P E R A N S I Y14.5M , 1982.

C O N T R O LLIN G D IM E N SIO N : IN C H .

D IM E N S IO N S A R E S H O W N

M ILLIM ET E R S (IN C H E S ).

C O N F O R M S T O JE D E C O U TLIN E

TO -220A B .

1.32 (.052)

1.22 (.048)

- A -

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

1.15 (.045)

MIN

LE A D A S S IG N M E N T S

1 - G A TE

2 - C O LLE C TO R

3 - E M ITT E R

4 - C O LLE C TO R

3.96 (.160)

3.55 (.140)

3 X

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

3 X

1.40 (.055)

1.15 (.045)

3 X

0.36 (.014)

M B A M

2.92 (.115)

2.64 (.104)

2.54 (.100)

CONFORMS TO JEDEC OUTLINE TO-220AB

D im e n sio n s in M illim e te rs a n d (In ch e s)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

^{Data and specifications subject to change wit}w^how^utw^no.^tiⁱr^cf^e.^.c⁴o^/0m⁰

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/

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