IRG4BC10SD-STRLPBF [INFINEON]
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3;型号: | IRG4BC10SD-STRLPBF |
厂家: | Infineon |
描述: | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 晶体 晶体管 开关 电动机控制 双极性晶体管 栅 局域网 |
文件: | 总8页 (文件大小:158K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 91733A
IRG4BC10K
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
VCES = 600V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
VCE(on) typ. = 2.39V
G
• Industry standard TO-220AB package
@VGE = 15V, IC = 5.0A
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
9.0
IC @ TC = 100°C
5.0
A
ICM
18
ILM
18
tsc
10
µs
V
VGE
20
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
34
mJ
PD @ TC = 25°C
38
15
W
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.5
Max.
3.3
–––
80
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
–––
2.0 (0.07)
–––
www.irf.com
1
4/24/2000
IRG4BC10K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
1.2
—
—
—
—
0.58
V/°C VGE = 0V, IC = 1.0mA
2.39 2.62
IC = 5.0A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
3.25
2.63
—
—
—
IC = 9.0A
V
See Fig.2, 5
IC = 5.0A , TJ = 150°C
VCE = VGE, IC = 250µA
6.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
1.8
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 50 V, IC = 5.0A
VGE = 0V, VCE = 600V
250
2.0
1000
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = 20V
—
IGES
Gate-to-Emitter Leakage Current
—
100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 5.0A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
19
29
Qge
Qgc
td(on)
tr
2.9 4.3
nC
ns
VCC = 400V
VGE = 15V
See Fig.8
9.8
11
24
51
15
—
—
77
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail"
190 290
Eon
Eoff
Ets
tsc
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.16
0.10
—
—
mJ See Fig. 9,10,14
0.26 0.32
—
—
µs
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 100Ω , VCPK < 500V
TJ = 150°C,
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
11
27
—
—
—
—
—
—
—
—
—
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail"
ns
Turn-Off Delay Time
Fall Time
67
350
0.47
7.5
220
29
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ See Fig. 10,11,14
LE
nH
Measured 5mm from package
Cies
Coes
Cres
VGE = 0V
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
7.5
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Repetitive rating; pulse width limited by maximum
junction temperature.
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
2
www.irf.com
IRG4BC10K
14
12
10
8
For both:
Triangular wave:
Duty cycle: 50%
T
T
= 125°C
= 90°C
J
sink
Gate drive as specified
Power Dissipation = 9.2 W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
6
4
Ideal diodes
2
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
°
T = 25 C
J
10
10
°
T = 150 C
J
°
T = 150 C
J
°
T = 25 C
J
V
= 50V
V
= 15V
CC
GE
20µs PULSE WIDTH
5µs PULSE WIDTH
1
1
1.0
5
10
15 20
2.0
V
3.0
4.0
5.0 6.0 7.0
V
, Gate-to-Emitter Voltage (V)
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
5µs PULSE WIDTH
IRG4BC10K
5.0
4.0
3.0
2.0
1.0
10
V
= 15V
GE
80 us PULSE WIDTH
I
= 10A
C
8
6
4
2
0
I
I
=
5A
C
C
= 2.5A
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
T
75
100
125
150
°
, Junction Temperature ( C)
T
°
, Case Temperature ( C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10K
400
300
200
100
0
20
16
12
8
V
= 0V,
f = 1MHz
C
V
I
= 400V
= 5.0A
GE
CC
C
C
= C + C
SHORTED
ce
ies
ge
gc ,
gc
C
= C
res
gc
= C + C
C
oes
ce
C
ies
4
C
oes
res
C
0
1
10
100
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 8 - Typical Gate Charge vs.
Fig. 7 - Typical Capacitance vs.
Gate-to-Emitter Voltage
Collector-to-Emitter Voltage
0.28
0.26
0.24
0.22
0.20
10
V
V
T
= 480V
100Ω
R
V
V
CC
= Ohm
= 15V
CC
GE
J
G
GE
= 15V
= 25
= 5A
°
C
= 480V
I
C
I
I
I
=
=
A
A
10
5
C
1
C
C
= 2.5A
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
20
40
60
80
100
°
T , Junction Temperature ( C )
R
G
, Gate Resistance
( Ω )
J
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
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5
IRG4BC10K
1.2
100
10
1
R
G
T
J
=
100 Ω
V
T
= 20V
GE
J
= 125 oC
°
= 150 C
V
V
= 480V
= 15V
GE
CC
1.0
0.8
0.6
0.4
0.2
SAFE OPERATING AREA
10
1
100
1000
2
4
6
8
10
V
, Collector-to-Emitter Voltage (V)
I
, Collector Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector Current
6
www.irf.com
IRG4BC10K
L
D.U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Current Test Circuit
Load Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d (off)
Waveforms
10%
5%
I
C
t
f
t
r
t
d(o n )
t=5µs
E
E
o ff
o n
E
= (E
+E
)
o ff
ts
o n
www.irf.com
7
IRG4BC10K
Case Outline and Dimensions TO-220AB
10.54 (.415)
3.78 (.149)
N O TE S :
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
1
D IM E N S IO N S & T O LER A N C IN G
4.69 (.185)
4.20 (.165)
3.54 (.139)
P E R A N S I Y14.5M , 1982.
C O N T R O LLIN G D IM E N SIO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM ET E R S (IN C H E S ).
C O N F O R M S T O JE D E C O U TLIN E
TO -220A B .
1.32 (.052)
1.22 (.048)
- A -
2
3
6.47 (.255)
6.10 (.240)
4
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LE A D A S S IG N M E N T S
1 - G A TE
1
2
3
2 - C O LLE C TO R
3 - E M ITT E R
4 - C O LLE C TO R
3.96 (.160)
3.55 (.140)
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e n sio n s in M illim e te rs a n d (In ch e s)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
8
Data and specifications subject to change witwhowutwno.tiircfe..c4o/0m0
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