IRG4BC10SDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG4BC10SDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总10页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -94904
IRG4BC10SDPbF
Standard Speed CoPack
IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
G
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
E
n-channel
• Industry standard TO-220AB package
• Lead-Free
Benefits
• Generation 4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
600
V
IC @ TC = 25°C
14
IC @ TC = 100°C
8.0
ICM
Pulsed Collector Current
18
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
18
IF @ TC = 100°C
4.0
IFM
18
± 20
VGE
V
PD @ TC = 25°C
Maximum Power Dissipation
38
W
°C
PD @ TC = 100°C Maximum Power Dissipation
15
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
Max.
3.3
7.0
Units
RθJC
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
RθJC
°C/W
RθCS
0.50
–––
80
RθJA
–––
Wt
2.0(0.07)
–––
g (oz)
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1
12/23/03
IRG4BC10SDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage 600
—
—
—
V
VGE = 0V, IC = 250µA
—
—
—
—
3.0
—
0.64
V/°C VGE = 0V, IC = 1.0mA
IC = 8.0A
VCE(on)
Collector-to-Emitter Saturation Voltage
1.58 1.7
VGE = 15V
2.05
1.68
—
—
—
V
IC = 14.0A
See Fig. 2, 5
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-9.5
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
Zero Gate Voltage Collector Current
3.65 5.48
—
S
VCE = 100V, IC =8.0A
VGE = 0V, VCE = 600V
ICES
—
—
—
—
—
—
—
250
1000
µA
V
GE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
1.5 1.8
1.4 1.7
V
IC =4.0A
See Fig. 13
IC =4.0A, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15 22
IC = 8.0A
Qge
Qgc
td(on)
tr
2.42 3.6
6.53 9.8
nC VCC = 400V
VGE = 15V
See Fig. 8
76
32
—
—
TJ = 25°C
ns
IC = 8.0A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
815 1200
720 1080
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.31
3.28
—
—
mJ See Fig. 9, 10, 18
3.60 10.9
1.46 2.6
mJ IC = 5.0A
70
36
—
—
—
—
—
—
—
—
—
42
57
TJ = 150°C, See Fig. 10,11, 18
IC = 8.0A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
890
890
3.83
7.5
280
30
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
4.0
28
ƒ = 1.0MHz
TJ = 25°C See Fig.
38
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF =4.0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
2.9 5.2
3.7 6.7
VR = 200V
Qrr
40
60
70 105
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
280
235
—
—
Details of note through are on the last page
2
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IRG4BC10SDPBF
10.0
8.0
6.0
4.0
2.0
0.0
For both:
Duty cycle: 50%
T
= 125°C
= 90°C
J
T
sink
Gate drive as specified
Power Dissipation =9.2
W
Square wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
°
T = 25 C
J
°
°
T = 150 C
T = 150 C
J
J
10
°
T = 25 C
J
V
= 15V
V
= 50V
GE
CC
80µs PULSE WIDTH
5µsPULSEWIDTH
1
0.5
1.0
1.5
2.0
2.5
3.0
6
8
10 12
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4BC10SDPbF
16
3.00
2.50
2.00
1.50
1.00
V
= 15V
GE
80 us PULSE WIDTH
I
= 16A
C
12
8
I
I
=
=
8A
4A
C
C
4
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
°
T , Junction Temperature ( C)
J
°
T , Case Temperature ( C)
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10SDPBF
20
15
10
5
500
400
300
200
100
0
V
CC
I
C
= 400V
= 8A
V
= 0V,
f = 1MHz
C SHORTED
ce
GE
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
C
C
oes
res
0
1
10
100
0
5
10
15
20
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
CE
G
Fig. 8 - Typical Gate Charge vs.
Fig. 7 - Typical Capacitance vs.
Gate-to-Emitter Voltage
Collector-to-Emitter Voltage
3.60
3.55
3.50
3.45
3.40
3.35
3.30
100
10
1
100Ω
V
= 480V
R
= O
= 15V
CC
GE
G
V
T
= 15V
V
GE
°
= 25
= 8A
C
V
= 480V
J
C
CC
I
I =
C
A
16
I =
C
A
A
8
4
I =
C
0.1
0
20
40
60
80
100
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature ( C )
RG , Gate Resistance (Ω)
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BC10SDPbF
100
10
1
15
V
T
= 20V
R
T
= 100
= 150 C
100 Ω
GE
J
G
J
= 125 oC
°
V = 480V
= 15V
GE
CC
V
12
9
6
3
SAFE OPERATING AREA
10
0
0
4
8
12
16
20
1
100
1000
I
, Collector Current (A)
V
, Collector-to-Emitter Voltage (V)
C
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector Current
100
T = 150°C
J
10
T = 125°C
J
T = 25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - VFM ( V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC10SDPBF
50
45
40
35
30
25
20
14
12
10
8
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
I
F
I
I
= 8.0A
= 4.0A
F
F
6
4
2
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR= 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
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7
IRG4BC10SDPbF
Same type
device as
D.U.T.
430µF
80%
90%
of Vce
D.U.T.
10%
V
ge
V
C
90%
t
d(off)
10%
5%
I
C
Fig. 18a - Test Circuit for Measurement of
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t
f
t
r
I
t
d(on)
t=5µs
E
on
E
off
E =(E +E
ts on off
)
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Eon = Vce Ic dt
t4
∫
Erec =
t1
Vd Ic dt
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC10SDPBF
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
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9
IRG4BC10SDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
TO-220AB Package Outline
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASS EMBLED ON WW 19, 1997
IN T HE AS S EMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S E MBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
10
www.irf.com
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