IRG4BC10UDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast CoPack IGBT; 超快SOFR恢复二极管超快CoPack IGBT绝缘栅双极TRANSISROT
| 型号： | IRG4BC10UDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast CoPack IGBT |
| 文件： | 总11页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94905
IRG4BC10UDPbF
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
VCES = 600V
UltraFast: Optimized for high operating
up to 80 kHz in hard switching, >200 kHz in
resonant mode
VCE(on) typꢀ = 2ꢀ15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
@VGE = 15V, IC = 5ꢀ0A
tf (typꢀ) = 140ns
previous Generation
E
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
n-channel
Industry standard TO-220AB package
Lead-Free
Benefits
Generation 4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's ꢀ Minimized recovery characteristics require
less/no snubbing
TO-220AB
Absolute Maximum Ratings
Parameter
Maxꢀ
600
8ꢀ5
5ꢀ0
34
Units
V
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
I
IC @ TC = 100°C
ICM
A
ILM
34
IF @ TC = 100°C
4ꢀ0
16
IFM
VGE
± 20
38
V
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating
W
PD @ TC = 100°C
15
TJ
Junction
and-55
TSTG
Storage Temperature Range
Soldering Temperature, for 10 secꢀ
Mounting Torque, 6-32 or M3 Screwꢀ
°C
300 (0ꢀ063 inꢀ (1ꢀ6mm) from case)
10 lbfin (1ꢀ1 Nm)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Minꢀ
Typꢀ
Maxꢀ
3ꢀ3
7ꢀ0
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
0ꢀ50
80
2 (0ꢀ07)
g (oz)
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1
12/23/03
IRG4BC10UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Minꢀ Typꢀ Maxꢀ Units
Conditions
V(BR)CES
∆V(BR)CES/∆TJ Temperature Coeffꢀ of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage 600
V
VGE = 0V, IC = 250µA
0ꢀ54
V/°C VGE = 0V, IC = 1ꢀ0mA
IC = 5ꢀ0A
VCE(on)
Collector-to-Emitter Saturation Voltage
2ꢀ15 2ꢀ6
VGE = 15V
2ꢀ61
2ꢀ30
V
IC = 8ꢀ5A
See Figꢀ 2, 5
IC = 5ꢀ0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3ꢀ0
6ꢀ0
∆VGE(th)/∆TJ Temperature Coeffꢀ of Threshold Voltage
-8ꢀ7
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2ꢀ8 4ꢀ2
S
VCE = 100V, IC = 5ꢀ0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
250 µA
1000
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1ꢀ5 1ꢀ8
1ꢀ4 1ꢀ7
V
IC = 4ꢀ0A
See Figꢀ 13
IC = 4ꢀ0A, TJ = 125°C
VGE = ±20V
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Minꢀ Typꢀ Maxꢀ Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
15
22
IC = 5ꢀ0A
nC VCC = 400V
VGE = 15V
Qge
Qgc
td(on)
tr
2ꢀ6 4ꢀ0
5ꢀ8 8ꢀ7
See Figꢀ 8
40
16
TJ = 25°C
ns
IC = 5ꢀ0A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
FallTime
87 130
140 210
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
diode reverse recoveryꢀ
See Figꢀ 9, 10, 18
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
0ꢀ14
0ꢀ12
mJ
ns
0ꢀ26 0ꢀ33
td(on)
tr
td(off)
tf
38
18
42
57
TJ = 150°C, See Figꢀ 11, 18
IC = 5ꢀ0A, VCC = 480V
Turn-Off Delay Time
FallTime
95
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
250
0ꢀ45
7ꢀ5
270
21
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recoveryꢀ
nH Measured 5mm from package
VGE = 0V
LE
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Figꢀ 7
3ꢀ5
28
= 1ꢀ0MHz
TJ = 25°C See Figꢀ
38
TJ = 125°C
TJ = 25°C See Figꢀ
TJ = 125°C 15
nC TJ = 25°C See Figꢀ
TJ = 125°C 16
A/µs TJ = 25°C See Figꢀ
TJ = 125°C 17
14
IF = 4ꢀ0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
2ꢀ9 5ꢀ2
3ꢀ7 6ꢀ7
VR = 200V
Qrr
40
60
70 105
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
280
235
Details of note through are on the last page
2
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IRG4BC10UDPbF
7
6
5
4
3
2
1
0
For boh:
Duty cycle: 50%
T
= 125°C
= 90°C
J
T
sink
Gate drive as specified
9ꢀ2
Power Dissipation =
W
Square wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f, Frequency (KHz)
Figꢀ 1 - Typical Load Current vsꢀ Frequency
(Load Current = IRMS of fundamental)
100
100
T = 25oC
J
T = 150oC
J
10
10
T = 150oC
J
1
T = 25oC
J
V
= 15V
V
= 50V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
0.1
1
1
10
5
6
7
8
9
10
11
12
13
14
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Figꢀ 3 - Typical Transfer Characteristics
Figꢀ 2 - Typical Output Characteristics
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3
IRG4BC10UDPbF
10
5.0
4.0
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
8
6
4
2
0
I
= 10A
C
5ꢀ0 A
=
I
I
C
C
= 2.5A
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Case Temperature ( C)
°
T , Junction Temperature ( C)
C
J
Figꢀ 4 - Maximum Collector Current vsꢀ Case
Figꢀ 5 - Typical Collector-to-Emitter Voltage
Temperature
vsꢀJunctionTemperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Figꢀ6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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4
IRG4BC10UDPbF
500
400
300
200
100
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
V
I
= 400V
= 5.0A
GE
CC
C
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
C
C
oes
res
4
0
1
10
100
0
4
8
12
16
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Figꢀ 7 - Typical Capacitance vsꢀ
Figꢀ 8 - Typical Gate Charge vsꢀ
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
0.30
0.25
0.20
10
100Ω
V
V
= 480V
= 15V
= 25 C
R
= Ohm
= 15V
CC
GE
G
V
GE
°
V
= 480V
T
J
C
CC
I
= 5.0A
I
=
A
10
C
1
5ꢀ0A
I
I
=
=
A
C
A
2.5
C
0.1
0.01
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
50
60
70
80
90
100
R
, Gate Resistance (Ω)
T , Junction Temperature ( C )
J
G
Figꢀ 9 - Typical Switching Losses vsꢀ Gate
Figꢀ 10 - Typical Switching Losses vsꢀ
Resistance
JunctionTemperature
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5
IRG4BC10UDPbF
100
10
1
1.4
V
T
= 20V
R
T
V
=100Ω
G
J
CC
GE
J
= 125 oC
°
= 150 C
= 480V
= 15V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GE
SAFE OPERATING AREA
10
1
100
1000
0
2
4
6
8
10
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Figꢀ 11 - Typical Switching Losses vsꢀ
Figꢀ 12 - Turn-Off SOA
Collector-to-EmitterCurrent
100
T = 150°C
J
10
T = 125°C
J
T = 25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - VFM ( V )
Figꢀ 13 - Maximum Forward Voltage Drop vsꢀ Instantaneous Forward Current
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6
IRG4BC10UDPbF
50
45
40
35
30
25
20
14
12
10
8
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
I
F
I
I
= 8.0A
= 4.0A
F
F
6
4
2
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Figꢀ 15 - Typical Recovery Current vsꢀ dif/dt
Figꢀ 14 - Typical Reverse Recovery vsꢀ dif/dt
200
1000
VR= 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Figꢀ 16 - Typical Stored Charge vsꢀ dif/dt
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Figꢀ 17 - Typical di(rec)M/dt vsꢀ dif/dt,
7
IRG4BC10UDPbF
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
90% Ic
D.U.T.
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
VceIcdt
Eoff =
Figꢀ 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
∫
t1
t1
t2
Figꢀ 18b - Test Waveforms for Circuit of Figꢀ 18a, Defining
Eoff, td(off), tf
trr
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
VceIcdt
t1
Eon =
t4
∫
Erec =
Vd Ic dt
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Figꢀ 18d - Test Waveforms for Circuit of Figꢀ 18a,
Figꢀ 18c - Test Waveforms for Circuit of Figꢀ 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC10UDPbF
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18eꢀ Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100V
Figure 20ꢀ Pulsed Collector Current
Test Circuit
Figure 19ꢀ Clamped Inductive Load Test Circuit
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9
IRG4BC10UDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 100Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0ꢀ1%.
Pulse width 5ꢀ0µs, single shotꢀ
TO-220AB Package Outline
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGN ME NTS
1.15 (.045)
MIN
H EXFET
IGB Ts, C oP ACK
2- DR AIN
3- SOU RC E
1
2
3
1- GATE
1- GATE
2- C OLLECTOR
3- EM ITTE R
4- C OLLECTOR
4- DR AIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
1.15 (.045)
3X
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E X AM P L E : T H IS IS AN IR F 1 0 10
L OT COD E 17 8 9
P AR T N U M B E R
D AT E COD E
AS S E MB L E D O N W W 1 9, 1 9 9 7
IN T H E AS S E M B L Y L IN E "C"
IN T E R N AT IO N AL
R E CT IF IE R
L OGO
N ote: "P" in assembly line
position indicates "Lead-Free"
Y E AR
W E E K 1 9
L IN E
7 = 1 9 9 7
AS S E M B L Y
L OT CO D E
C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/03
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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