IRG4BC20SD [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.4V ， @ VGE = 15V ， IC = 10A）
| 型号： | IRG4BC20SD |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) |
| 文件： | 总10页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91793
IRG4BC20SD
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Extremely low voltage drop 1.4Vtyp. @ 10A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
VCES = 600V
VCE(on) typ. = 1.4V
G
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
@VGE = 15V, IC = 10A
E
n-channel
• Industry standard TO-220AB package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
600
V
I
19
IC @ TC = 100°C
10
ICM
38
A
ILM
38
IF @ TC = 100°C
7.0
IFM
38
± 20
VGE
V
P
D @ TC = 25°C
Maximum Power Dissipation
60
W
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
2.1
Units
RθJC
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
RθJC
–––
3.5
°C/W
RθCS
0.50
–––
80
RθJA
–––
Wt
2 (0.07)
–––
g (oz)
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1
9/23/98
IRG4BC20SD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES
Collector-to-Emitter Breakdown Voltageƒ
600
—
—
—
—
V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.75
V/°C VGE = 0V, IC = 1.0mA
IC = 10A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.40 1.6
VGE = 15V
—
1.85
1.44
—
—
—
V
IC = 19A
See Fig. 2, 5
—
IC = 10A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.0 5.8
—
S
VCE = 100V, IC = 10A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
—
250
1700
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.4 1.7
1.3 1.6
V
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
27
40
IC = 10A
nC VCC = 400V
VGE = 15V
Qge
Qgc
td(on)
tr
4.3 6.5
See Fig. 8
10
62
32
15
—
—
TJ = 25°C
ns
IC = 10A, VCC = 480V
VGE = 15V, RG = 50Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
690 1040
480 730
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.32
2.58
—
—
mJ See Fig. 9, 10, 11,18
2.90 4.5
td(on)
tr
td(off)
tf
64
35
—
—
—
—
—
—
—
—
—
55
90
TJ = 150°C, See Fig. 10,11, 18
ns
IC = 10A, VCC = 480V
Turn-Off Delay Time
Fall Time
980
800
4.33
7.5
550
39
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH Measured 5mm from package
VGE = 0V
LE
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
7.1
37
ƒ = 1.0MHz
TJ = 25°C See Fig.
55
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 8.0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
3.5 5.0
4.5 8.0
65 138
124 360
VR = 200V
Qrr
di/dt = 200Aµs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
240
210
—
—
2
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IRG4BC20SD
16
12
8
For both:
Duty cycle: 50%
T
T
=
125°C
90°C
J
=
sink
G ate drive as specified
Power Dissipation = 13
W
Squa re wave:
60% of rated
voltage
I
4
Ideal diodes
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
T = 150oC
J
10
°
T = 150 C
J
T = 25oC
J
°
T = 25 C
J
V
= 50V
V
= 15V
CC
5µs PULSE WIDTH
GE
20µs PULSE WIDTH
1
5
6
7
8
9
10 11
12
0.0
1.0
2.0
3.0 4.0
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4BC20SD
20
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 20A
15
10
5
C
I
I
= 10A
C
C
=
5.0 A
0
25
50
T
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Case Temperature ( C)
°
, Junction Temperature ( C)
T
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
t
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20SD
1000
800
600
400
200
0
20
16
12
8
V
C
= 0V,
f = 1MHz
C SHORTED
ce
GE
V
CC
I
C
= 400V
= 10A
= C + C
ies
ge
gc
gc ,
C
= C
res
C
= C + C
oes
ce
gc
C
ies
C
oes
res
4
C
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
3.0
2.9
2.8
2.7
100
50Ω
= 15V
= 480V
V
V
T
= 480V
R
=
CC
GE
J
G
= 15V
V
GE
°
= 25
C
V
CC
I
= 10A
C
I
I
I
=
=
=
20A
10A
5A
C
C
C
10
1
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature ( C )
RG, Gate Resistance (Ω)
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
JunctionTemperature
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5
IRG4BC20SD
14
100
10
1
R
T
V
= 50Ω
G
J
CC
GE
V
T
= 20V
GE
J
°
= 150 C
= 480V
= 15V
= 125 oC
12
10
8
V
6
4
2
SAFE OPERATING AREA
10
0
0
4
8
12
16
20
1
100
1000
I
, Collector Current (A)
V
, Collector-to-Emitter Voltage (V)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
100
10
T
= 150°C
= 125°C
J
T
J
T
=
25°C
J
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Volta ge D ro p - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC20SD
100
80
60
40
20
0
100
10
1
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 16A
F
I
= 8.0A
F
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
I
= 4.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
300
I
= 4.0A
= 8.0A
F
I
= 16A
F
1000
I
F
200
100
0
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4BC20SD
Same type
device as
D.U.T.
430µF
80%
90%
of Vce
D.U.T.
10%
V
ge
V
C
90%
t
d(off)
10%
5%
I
C
Fig. 18a - Test Circuit for Measurement of
t
t
f
r
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t
d(on)
t=5µs
E
E
off
on
E
= (E +E )
on off
ts
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RM S
5% Vce
tr
td(on)
t2
VceIcdt
t1
E on =
t2
t4
Erec =
Vd Ic dt
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC20SD
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
2 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
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9
IRG4BC20SD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline TO-220AB
10.54 (.415)
10.29 (.405)
N O TE S :
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
1
D IM E N S IO N S & T O LE R A N C IN G
4.69 (.185)
4.20 (.165)
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H ES ).
C O N FO R M S TO JE D E C O U TLIN E
T O -220AB .
1.32 (.052)
1.22 (.048)
- A -
2
3
6.47 (.255)
6.10 (.240)
4
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
M IN
LE A D A S S IG N M E N T S
1
2
3
1
2
3
4
- G A TE
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
3.96 (.160)
3.55 (.140)
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e ns io ns in M illim e ters a nd (In c he s)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 9/98
10
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