IRG4PC30FD-E [INFINEON]
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IRG4PC30FD-E |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN 超快软恢复二极管 快速软恢复二极管 局域网 栅 开关 功率控制 晶体管 |
| 文件： | 总10页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 91460B
IRG4PC30FD
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCES = 600V
V
CE(on) typ. = 1.59V
• Generation 4 IGBT design provides tighter
G
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
@VGE = 15V, IC = 17A
E
n-channel
• Industry standard TO-247AC package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
TO-247AC
Parameter
Max.
600
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
31
IC @ TC = 100°C
17
ICM
120
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
120
IF @ TC = 100°C
12
IFM
120
VGE
± 20
100
V
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
W
PD @ TC = 100°C
42
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
1.2
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
–––
2.5
0.24
–––
40
°C/W
g (oz)
–––
6 (0.21)
–––
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1
12/30/00
IRG4PC30FD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ––– –––
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.59 1.8
––– 1.99 –––
IC = 17A
VGE = 15V
V
IC = 31A
See Fig. 2, 5
––– 1.70 –––
IC = 17A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 ––– mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
6.1
10 –––
S
VCE = 100V, IC = 17A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
––– ––– 250
––– ––– 2500
––– 1.4 1.7
––– 1.3 1.6
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
––– 51
––– 7.9
––– 19
77
12
28
IC = 17A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
––– 42 –––
––– 26 –––
––– 230 350
––– 160 230
––– 0.63 –––
––– 1.39 –––
––– 2.02 3.9
––– 42 –––
––– 27 –––
––– 310 –––
––– 310 –––
––– 3.2 –––
––– 13 –––
––– 1100 –––
––– 74 –––
––– 14 –––
IC = 17A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
VGE = 15V, RG = 23Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ See Fig. 9, 10, 11, 18
TJ = 150°C, See Fig. 9, 10, 11, 18
ns
IC = 17A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
VGE = 15V, RG = 23Ω
Energy losses include "tail" and
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
––– 42
––– 80 120
Diode Peak Reverse Recovery Current ––– 3.5 6.0
––– 5.6 10
60
TJ = 25°C See Fig.
ns
A
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 12A
Irr
VR = 200V
Qrr
Diode Reverse Recovery Charge
––– 80 180
––– 220 600
––– 180 –––
––– 120 –––
nC
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
A/µs
2
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IRG4PC30FD
25
20
15
10
5
D uty cy cle: 50 %
T
T
=
12 5° C
90 °C
J
=
sink
G a te d riv e a s sp ec ified
T urn-on los se s inc lude
e ffe cts o f re ve rse re co ve ry
P ow e r D issip ation
= 24W
60% of rated
voltage
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
10
1000
TJ = 25°C
100
10
1
TJ = 150°C
TJ = 150°C
TJ = 25°C
V C C = 50V
5µs PULSE WIDTH
V G E = 15V
20µs PULSE WIDTH
A
A
1
5
6
7
8
9
10
11
12
13
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4PC30FD
40
2.5
2.0
1.5
1.0
V
= 15V
G E
VG E = 15V
80µs PULSE WIDTH
IC = 34A
30
20
10
0
IC = 17A
IC = 8.5A
A
25
50
75
100
125
150
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
10
1
D
=
0 .50
0.2 0
0.1 0
0.0 5
P
D M
0.1
t
1
0.02
0.01
t
2
S IN G LE P U L S E
N otes:
(T H E R M A L R E S P O N S E )
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.00 1
0.01
0.1
10
t
, Rectangular Pulse D uration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4PC30FD
2000
1600
1200
800
400
0
20
16
12
8
VC E = 400V
IC = 17A
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
SHORTED
Coes = Cce + Cgc
C
ies
C
C
oes
4
res
A
A
0
1
10
100
0
10
20
30
40
50
60
V
, Collector-to-Emitter Voltage (V)
Q
, Total Gate Charge (nC)
CE
g
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
2.20
2.10
2.00
1.90
1.80
VC C = 480V
VG E = 15V
IC = 34A
TJ
= 25°C
IC = 17A
I C = 17A
IC = 8.5A
1
R G = 23
Ω
V G E = 15V
V C C = 480V
A
A
0.1
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
20
40
60
80
T
, Junction Temperature (°C)
R
, Gate Resistance (
)
Ω
J
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4PC30FD
8.0
1000
100
10
V
T
= 20V
G E
RG = 23
Ω
= 150°C
= 125°C
T J
J
VC C = 480V
V G E = 15V
6.0
4.0
2.0
0.0
SAFE OPE RA TING A RE A
A
1
1
10
100
1000
0
10
20
30
40
V
, C olle ctor-to-E m itter V oltage (V )
I
, Collector-to-Emitter Current (A)
CE
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
T
= 150°C
J
T
= 125°C
J
10
T
=
25°C
J
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Volta ge D ro p - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4PC30FD
100
10
1
160
120
80
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 24A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
I
= 6.0A
F
I
= 6.0A
F
40
0
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
600
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
1000
I
= 6.0A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
200
100
I
= 24A
F
I
= 6.0A
F
0
100
10
100
1000
1000
di /dt - (A/µs)
f
d i /d t - (A/µ s)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4PC30FD
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
Ic
430µF
80%
5% Ic
of Vce
D.U.T.
td(off)
tf
t1+5µS
Eoff =
Vce ic dt
∫
t1
Fig. 18a - Test Circuit for Measurement of
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
Vce ie dt
E on =
t4
∫
Erec = Vd id dt
t1
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4PC30FD
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
L
D.U.T.
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test
Circuit
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9
IRG4PC30FD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline TO-247AC
N O T E S :
-
D -
3.65 ( .14 3)
3.55 ( .14 0)
0.2 5 (.0 1 0)
1
D IM E N S IO N S & TO LE R A N C IN G
5.30 ( .20 9 )
4.70 ( .18 5 )
1 5.90 (.62 6)
1 5.30 (.60 2)
P E R A N S I Y 14.5M , 1982.
C O N T R O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E T E R S (IN C H E S ).
C O N F O R M S T O JE D E C O U T LIN E
T O -247A C .
M
M
D
B
2
3
2.5 0 (.0 89)
-
B -
-
A -
1.5 0 (.0 59)
4
5.5 0 (.2 17)
4
2 0.3 0 (.80 0)
1 9.7 0 (.77 5)
5.50 (.2 17)
4.50 (.1 77)
2 X
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
- C O LLE C TO R
- E M IT T E R
- C O LLE C TO R
1
2
3
-
C -
1 4 .80 ( .58 3)
1 4 .20 ( .55 9)
4.3 0 (.1 70)
3.7 0 (.1 45)
*
L O N G E R LE A D E D (20m m )
V E R S IO N A V A ILA B LE (TO -247A D )
T O O R D E R A D D "-E " S U FF IX
T O P A R T N U M B E R
*
2.40 ( .09 4)
2.00 ( .07 9)
2 X
0.80 (.03 1)
1.4 0 (.0 56)
1.0 0 (.0 39)
0.25 (.0 10)
3X
3 X
0.40 (.01 6)
M
S
2 .6 0 (.10 2)
2 .2 0 (.08 7)
A
C
5 .4 5 (.21 5)
3.40 (.13 3)
3.00 (.11 8)
2 X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n sio n s in M illim ete rs a n d (In ch e s)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
10
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