IRG4PC40UD-E [INFINEON]
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IRG4PC40UD-E |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN 局域网 栅 功率控制 晶体管 |
| 文件： | 总11页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 9.1467D
IRG4PC40UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCES = 600V
V
CE(on) typ. = 1.72V
• Generation 4 IGBT design provides tighter
G
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
@VGE = 15V, IC = 20A
E
n-channel
• Industry standard TO-247AC package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
TO-247AC
Parameter
Max.
600
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
IC @ TC = 25°C
40
IC @ TC = 100°C
20
ICM
160
A
ILM
160
IF @ TC = 100°C
15
IFM
160
VGE
± 20
160
V
PD @ TC = 25°C
Maximum Power Dissipation
W
P
D @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
------
------
------
-----
Typ.
------
Max.
0.77
1.7
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
------
°C/W
0.24
------
40
-----
------
6 (0.21)
------
g (oz)
4/17/97
IRG4PC40UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ---- ----
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1.72 2.1
---- 2.15 ----
---- 1.7 ----
3.0 ---- 6.0
IC = 20A
VGE = 15V
V
IC = 40A
See Fig. 2, 5
IC = 20A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
11
----
----
18
----
S
VCE = 100V, IC = 20A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
---- 250
---- 3500
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
---- 1.3 1.7
---- 1.2 1.6
V
IC = 15A
See Fig. 13
IC = 15A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
----
---- ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
---- 100 150
IC = 20A
Qge
Qgc
td(on)
tr
----
----
----
----
16
40
54
57
25
60
nC VCC = 400V
VGE = 15V
See Fig. 8
----
----
TJ = 25°C
ns
IC = 20A, VCC = 480V
VGE = 15V, RG = 10Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
---- 110 165
---- 80 120
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
---- 0.71 ----
---- 0.35 ----
---- 1.10 1.5
mJ See Fig. 9, 10, 11, 18
----
----
40
52
----
----
TJ = 150°C, See Fig. 9, 10, 11, 18
ns
IC = 20A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
---- 200 ----
---- 130 ----
---- 1.6 ----
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH Measured 5mm from package
VGE = 0V
----
13
----
Cies
Coes
Cres
trr
---- 2100 ----
---- 140 ----
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
----
----
----
34
42
----
60
ƒ = 1.0MHz
TJ = 25°C See Fig.
74 120
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
14
IF = 15A
Irr
Diode Peak Reverse Recovery Current ---- 4.0 6.0
---- 6.5 10
---- 80 180
VR = 200V
Qrr
Diode Reverse Recovery Charge
---- 220 600
---- 190 ----
---- 160 ----
TJ = 125°C
A/µs TJ = 25°C
TJ = 125°C
16
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
IRG4PC40UD
30
20
10
0
Duty cycle: 50%
T
T
=
125°C
90°C
J
=
sink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Pow er Dissipation = 35W
60% of rated
voltage
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
10
100
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
10
VC C = 10V
5µs PULSE WIDTH
VG E = 15V
20µs PULSE WIDTH
A
A
1
1
4
6
8
10
12
0.1
1
10
V , Gate-to-Emitter Voltage (V)
GE
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
IRG4PC40UD
2.5
2.0
1.5
1.0
40
30
20
10
0
VG E = 15V
80µs PULSE WIDTH
V G E = 15V
IC = 40A
I
C
= 20A
= 10A
I
C
A
A
25
50
75
100
125
150
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
, Case Temperature (°C)
T
, Junction Temperature (°C)
C
J
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Junction Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
0.02
0.01
N otes:
1 . D uty factor D
=
t
/ t
2
1
Z
2. Pea k T
0.1
=
P
x
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
IRG4PC40UD
20
16
12
8
4000
3000
2000
1000
0
VCE = 400V
IC = 20A
V
C
C
C
= 0V,
f = 1M Hz
G E
ies
= C
= C
= C
+ C
+ C
,
C
S HO RTED
ge
gc
ce
gc
ce
res
oes
gc
C
ies
C
C
oes
res
4
A
0
A
0
20
40
60
80
100
120
1
10
100
Q
, Total Gate Charge (nC)
g
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
1.8
1.6
1.4
1.2
RG = 10
Ω
VC C = 480V
VG E = 15V
TC = 25°C
IC = 20A
V G E = 15V
VC C = 480V
I C = 40A
I C = 20A
IC = 10A
1
A
A
0.1
1.0
0
-60
-40
-20
0
20
40
60
80
100 120 140 160
10
20
30
40
50
60
T
, Junction Temperature (°C)
R
, Gate Resistance (
)
Ω
J
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
IRG4PC40UD
5.0
1000
100
10
RG = 10
V
T
= 20V
= 125°C
Ω
G
E
T C = 150°C
V C C = 480V
V G E = 15V
J
4.0
3.0
2.0
1.0
0.0
S AFE O PERATING A REA
A
1
0
10
20
30
40
50
1
10
100
1000
V
, Collector-to-Em itter Voltage (V)
I
, Collector-to-Emitter Current (A)
C E
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T
T
T
= 150°C
= 125°C
J
J
J
=
25°C
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRG4PC40UD
100
10
1
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR= 200V
T J = 125°C
T J = 25°C
80
I
= 30A
F
I
= 30A
F
I
= 15A
F
60
I
= 15A
F
I
= 5.0A
F
40
I
= 5.0A
F
20
100
1000
100
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1000
800
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
600
I
= 30A
F
I
= 5.0A
F
400
200
0
I
= 15A
I
= 15A
F
F
I
= 30A
F
I
= 5.0A
F
100
100
1000
100
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
IRG4PC40UD
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td(off)
tf
t1+5µS
Eoff =
Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RM S
5% Vce
tr
td(on)
t2
Vce ie dt
t1
E on =
t2
t4
Erec = Vd id dt
t3
DIO DE REVE RSE
t1
REC O VERY ENER G Y
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
IRG4PC40UD
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100 V
Figure 20. Pulsed Collector Current
Figure 19. Clamped Inductive Load Test
Test Circuit
Circuit
IRG4PC40UD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline TO-247AC
NOTE S:
-
D -
3.65 (.143)
3.55 (.140)
0.25 (.01 0)
1
DIM E NSIONS & T OLE RANC IN G
5.30 (.20 9)
4.70 (.18 5)
15.90 (.626)
15.30 (.602)
PER A NSI Y14.5M , 1982.
CON TROLLIN G DIM EN SION
DIM E NSIONS A RE SHO W N
M ILLIM ET ERS (INCH ES).
M
M
D
B
2
3
: INCH.
2.5 0 (.089)
-
B -
-
A -
1.5 0 (.059)
4
5.50 (.2 17)
4
CON FORM S TO JEDEC O UTLINE
TO-247AC.
20.30 (.800)
19.70 (.775)
5.5 0 (.217)
4.5 0 (.177)
2X
LEAD ASS IG NM E NTS
1
2
3
4
-
-
-
-
GAT E
COLLECTO R
EM ITT ER
COLLECTO R
1
2
3
-
C -
14.80 (.58 3)
14.20 (.55 9)
4.30 (.170)
3.70 (.145)
*
LO NGE R LEA DED (20m m )
VER SIO N AVAILABLE (TO-247AD)
TO OR DER AD D "-E" S UFFIX
TO PAR T NUM BER
*
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3 X
3X
M
S
A
2.60 (.102)
2.20 (.087)
0.2 5 (.010)
C
5.45 (.215)
3.40 (.133)
3.00 (.118)
2X
CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)
D im en sion s in M illim eters a nd (Inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRG4PC40W
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
INFINEON
IRG4PC40W-E
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRG4PC40W-EPBF
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRG4PC50F
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
INFINEON
IRG4PC50FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
INFINEON
IRG4PC50FD-E
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明