IRG4PC50UDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG4PC50UDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总10页 (文件大小：688K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -95185
IRG4PC50UDPbF
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCES = 600V
• Generation 4 IGBT design provides tighter
V
CE(on) typ. = 1.65V
parameter distribution and higher efficiency than
Generation 3
G
@VGE = 15V, IC = 27A
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
E
n-channel
• Industry standard TO-247AC package
• Lead-Free
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
600
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
55
IC @ TC = 100°C
27
ICM
220
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
220
IF @ TC = 100°C
25
IFM
220
VGE
± 20
200
V
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
W
PD @ TC = 100°C
78
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
Typ.
------
------
0.24
Max.
0.64
0.83
------
40
Units
RθJC
RθJC
RθCS
RθJA
Wt
°C/W
-----
------
6 (0.21)
------
g (oz)
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1
04/23/04
IRG4PC50UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage 600 ---- ----
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°C VGE = 0V, IC = 1.0mA
Min. Typ. Max. Units
Conditions
V(BR)CES
V
VGE = 0V, IC = 250µA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1.65 2.0
---- 2.0 ----
---- 1.6 ----
3.0 ---- 6.0
IC = 27A
C = 55A
VGE = 15V
V
I
See Fig. 2, 5
IC = 27A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
16
24
----
S
VCE = 100V, IC = 27A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
---- ---- 250
---- ---- 6500
---- 1.3 1.7
---- 1.2 1.5
µA
V
GE = 0V, VCE = 600V, TJ = 150°C
IC = 25A See Fig. 13
C = 25A, TJ = 150°C
VGE = ±20V
VFM
IGES
Diode Forward Voltage Drop
V
I
Gate-to-Emitter Leakage Current
---- ---- ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
See Fig. 8
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
---- 180 270
IC = 27A
Qge
Qgc
td(on)
tr
----
----
----
----
25
61
46
25
38
90
nC VCC = 400V
VGE = 15V
----
----
TJ = 25°C
ns
IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0Ω
td(off)
tf
Turn-Off Delay Time
FallTime
---- 140 230
---- 74 110
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
---- 0.99 ----
---- 0.59 ----
---- 1.58 1.9
mJ
ns
mJ
E
ts
td(on)
tr
td(off)
tf
----
----
44
27
----
----
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 27A, VCC = 480V
Turn-Off Delay Time
FallTime
---- 240 ----
---- 130 ----
---- 2.3 ----
VGE = 15V, RG = 5.0Ω
Energy losses include "tail" and
diode reverse recovery.
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
LE
----
13
----
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
---- 4000 ----
---- 250 ----
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
IF = 25A
----
----
52
50
----
75
ƒ = 1.0MHz
TJ = 25°C See Fig.
---- 105 160
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
TJ = 125°C 16
14
Irr
Diode Peak Reverse Recovery Current ---- 4.5
---- 8.0
10
15
VR = 200V
Qrr
Diode Reverse Recovery Charge
---- 112 375
---- 420 1200
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
---- 250 ---- A/µs TJ = 25°C
---- 160 ---- TJ = 125°C
2
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IRG4PC50UDPbF
40
30
20
10
0
Duty cycle: 50%
T
T
= 1 25°C
J
=
90°C
sink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 40W
60% of rated
voltage
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
1000
100
TJ = 150°C
TJ = 1 5 0 °C
10
TJ = 25°C
TJ = 2 5 °C
10
1
VG E = 1 5 V
VCC = 10V
2 0 µ s P UL S E W ID TH
5µs PULSE W IDTH
A
A
0.1
1
0
1
10
4
6
8
10
12
V
, Collector-to-Em itter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
C E
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4PC50UDPbF
60
2.5
2.0
1.5
1.0
V
= 15V
G E
VGE = 15V
80µs PULSE W IDTH
50
40
30
20
10
0
IC = 54A
IC = 27A
IC = 14A
A
25
50
75
100
125
150
-60
-40
-20
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
T
, Junction Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
D
=
0.5 0
0.2 0
0.1
0.1 0
0 .0 5
P
D M
t
1
S IN G L E P U LS E
t
2
(T H E R M A L R E S P O N S E )
0.02
0.01
N otes:
1 . D uty factor D =
t
/ t
2
1
2. P eak T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular P ulse Duration (sec)
1
Fig. 6-MaximumIGBTEffectiveTransientThermalImpedance,Junction-to-Case
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4
IRG4PC50UDPbF
20
16
12
8
8000
6000
4000
2000
0
VC E = 400V
IC = 27A
V G E = 0V ,
f = 1M Hz
C ies = C ge + C
C res = C gc
,
C
SHO RTED
gc
ce
C oes = C ce + C
gc
C
ie s
C
C
oes
res
4
A
A
0
0
40
80
120
160
200
1
10
100
Q
, Total Gate Charge (nC)
g
V
, Collector-to-Em itter Voltage (V)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
3.0
2.5
2.0
1.5
1.0
10
V C C = 4 8 0V
V G E = 1 5 V
T J
= 2 5 °C
IC = 54A
I C = 27 A
IC = 27A
IC = 14A
1
RG
= 5.0 Ω
VG E = 15V
VC C = 480V
A
A
0.1
0
10
20
30
40
50
60
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
, Junction Temperature (°C)
R
, G ate R e sista nce (
Ω
)
J
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4PC50UDPbF
8.0
1000
100
10
Ω
V
T
= 20V
= 125°C
R G = 5 .0
G
E
T
= 15 0 °C
V C C = 4 8 0 V
V G E = 1 5 V
J
J
6.0
4.0
2.0
0.0
SA FE O PERATING AREA
A
1
0
10
20
30
40
50
60
1
10
100
1000
I
, C ollector-to-Em itte r C urrent (A)
V
, Collector-to-Emitter Voltage (V)
C
C E
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T
= 150°C
= 125°C
J
T
J
T
=
25°C
J
0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage D ro p - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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6
IRG4PC50UDPbF
100
10
1
140
120
100
80
VR = 200V
TJ = 125°C
TJ = 25°C
VR
TJ
TJ
=
=
=
200V
125°C
25°C
I
= 50A
F
I
= 25A
F
I
I
= 50A
= 25A
F
F
I
= 10A
F
I
= 10A
F
60
40
20
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
1200
900
I
= 50A
F
I
= 10A
F
1000
600
300
0
I
= 25A
F
I
= 25A
F
I
= 10A
F
I
= 50A
F
100
100
100
1000
1000
di /dt - (A /µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4PC50UDPbF
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
Ic
430µF
80%
5% Ic
of Vce
D.U.T.
td(off)
tf
t1+5µ S
Eoff =
Vce ic dt
∫
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
Vce ie dt
E on =
t4
∫
Erec = Vd id dt
t1
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4PC50UDPbF
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
L
D.U.T.
RL=
1000V
V *
c
0 - 480V
50V
6000µ F
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test
Circuit
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9
IRG4PC50UDPbF
Notes:
Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature
(figure 20)
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S E MBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
035H
57
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 0 = 2000
WE EK 35
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB L Y
LOT CODE
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
10
www.irf.com
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