IRG4PC60F-EP [INFINEON]
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IRG4PC60F-EP |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN 局域网 栅 功率控制 晶体管 |
| 文件： | 总9页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94440
IRG4PC60F-P
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
VCES =600V
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCE(on)typ. = 1.50V
G
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Solder plated version of industry standard
TO-247AC package.
@VGE = 15V, IC = 60A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specified application conditions.
• Solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
• Designed for best performance when used with IR
HEXFRED & IR FRED companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
600
90
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
IC @ TC = 100°C
60
A
ICM
120
120
± 20
200
520
210
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
VGE
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
mJ
PD @ TC = 25°C
W
PD @ TC = 100°C
Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Maximum Reflow Temperature
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
230 (Time above 183°C
should not exceed 100s)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.24
–––
40
Units
RθJC
RθCS
RθJA
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (Typical Socket Mount)
Junction-to-Ambient (PCB Mount, Steady State)
Weight
0.24
°C/W
–––
–––
20
6 (0.21)
–––
g (oz)
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1
04/26/02
IRG4PC60F-P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 16
—
—
—
—
3.0
—
36
—
—
—
—
0.13
V/°C VGE = 0V, IC = 1.0mA
IC = 60A
1.5 1.8
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
1.7
1.5
—
—
—
IC = 90A
V
See Fig.2, 5
IC = 60A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
69
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100V, IC = 60A
250
2.0
1000
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
—
IGES
Gate-to-Emitter Leakage Current
—
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
290 340
40 47
100 130
Conditions
IC = 40A
Qg
Qge
Qgc
td(on)
tr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
nC
ns
VCC = 400V
VGE = 15V
See Fig. 8
42
66
—
—
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
FallTime
310 360
170 220
IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 10, 11, 13, 14
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
0.30
4.6
—
—
mJ
ns
E
ts
4.9 6.3
td(on)
tr
td(off)
tf
39
66
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 13, 14
Turn-Off Delay Time
FallTime
470
300
8.8
13
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
6050
360
66
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
ꢀ
Pulse width 5.0µs, single shot.
max. junction temperature. ( See fig. 13b )
When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
Refer to application note # 1023, "Surface Mounting of
Larger Devices."
VCC = 80%(VCES), VGE = 20V, Rg = 5.0W.
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
2
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IRG4PC60F-P
80
70
60
50
40
30
20
10
0
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 73W for Heatsink Mount
Power Dissipation = 3.5W for typical
PCB socket Mount
60% of rated
voltage
Ideal diodes
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
1000
T
= 150°C
100
10
J
100
10
T
= 150°C
J
1
1
T
= 25°C
T
= 25°C
J
J
0.1
0.01
0.1
0.01
V
= 15V
V
= 10V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
4
5
6
7
8
9
10
11
0.0
1.0
2.0
3.0
4.0
5.0
V
Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE,
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4PC60F-P
3.0
2.0
1.0
100
90
80
70
60
50
40
30
20
10
0
V
= 15V
GE
80µs PULSE WIDTH
V
= 15V
GE
I
= 120A
C
I
= 60A
= 30A
C
I
C
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
25
50
T
75
100
125
150
, Junction Temperature (°C)
, Case Temperature (°C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
P
DM
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
0.01
1
t
2
Notes:
1. Duty factor D =
t
/ t
1 2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4PC60F-P
100000
10000
1000
100
20
15
10
5
V
= 0V,
f = 1 MHZ
V
I
= 400V
GE
CC
C
C
= C + C
,
C
SHORTED
=
40A
ies
ge gc
ce
C
= C
res
ce
C
= C + C
oes
ce
gc
Cies
Coes
Cres
10
0
0
100
200
300
(V)
400
500
0
50
100
150
200
250
300
Q
, Total Gate Charge (nC)
V
G
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
100
8.00
7.00
6.00
5.00
4.00
V
= 480V
= 15V
R
= 5.0Ω
CC
G
V
V
V
= 15V
GE
GE
T = 25°C
= 480V
J
CC
I
= 120A
I
= 60A
C
C
10
I
= 60A
= 30A
C
I
C
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
T , Junction Temperature (°C)
J
R , Gate Resistance (
)
Ω
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRG4PC60F-P
30.0
1000
100
10
V
T
= 20V
R
= 5.0Ω
GE
= 125°
G
TJ = 150°C
J
V
= 15V
GE
CC
V
= 480V
20.0
10.0
0.0
SAFE OPERATING AREA
1
30
50
70
90
110
130
0.1
1
10
100
1000
I , Collector Current (A)
V
, Drain-to-Source Voltage (V)
C
DS
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4PC60F-P
L
D.U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
D river*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
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7
IRG4PC60F-P
Case Outline and Dimensions — TO-247AC
N O TE S :
-
D -
3.65 (.1 43 )
1
D IM E N S IO N S & T O LE R A N C IN G
5 .30 ( .20 9)
4 .70 ( .18 5)
15 .90 (.6 26)
3.55 (.1 40 )
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H E S ).
C O N FO R M S TO JE D E C O U TLIN E
T O -247AC .
15 .30 (.6 02)
M
0.25 (.01 0)
M
D
B
2
3
2.50 (.089)
1.50 (.059)
4
-
B -
-
A -
5.5 0 (.2 17)
4
20 .30 (.8 00)
19 .70 (.7 75)
5.5 0 (.2 17)
4.5 0 (.1 77)
2X
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
1
2
3
-
C -
14 .80 (.583 )
14 .20 (.559 )
4.30 (.1 70)
3.70 (.1 45)
LO N G E R LE A D ED (20m m )
V E R S IO N A V A ILA B LE (TO -247A D )
T O O R D E R A D D "-E " S U FF IX
T O P A R T N U M B ER
*
*
2.40 ( .094)
2.00 ( .079)
2 X
0.80 (.03 1)
0.40 (.01 6)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3X
3 X
2 .60 ( .10 2)
2 .20 ( .08 7)
M
S
A
C
5.45 (.2 15 )
3.40 (.1 3 3)
3.00 (.1 1 8)
2 X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n sion s in M illim e te rs a n d (In ch es )
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/02
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRG4PC60U-EP
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
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