IRG4RC10S [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A); 绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.10V ， @ VGE = 15V ， IC = 2.0A ）
| 型号： | IRG4RC10S |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) |
| 文件： | 总8页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91732A
IRG4RC10S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Extremely low voltage drop; 1.0V typical at 2A, 100°C
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
G
E
• Industry standard TO-252AA package
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
14
IC @ TC = 100°C
8.0
A
ICM
18
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
18
VGE
± 20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
110
mJ
PD @ TC = 25°C
38
15
W
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter
Typ.
–––
Max.
3.3
Units
°C/W
g (oz)
RθJC
RθJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
–––
50
0.3 (0.01)
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
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1
8/30/99
IRG4RC10S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
3.7
—
—
—
—
0.64
V/°C VGE = 0V, IC = 1.0mA
IC = 8.0A
1.58 1.7
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.05
1.68
—
—
—
IC = 14A
See Fig.2, 5
V
IC = 8.0A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-9.5
5.5
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100V, IC = 8.0A
VGE = 0V, VCE = 600V
250
2.0
1000
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
—
IGES
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
15 22
Conditions
IC = 8.0A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Qge
Qgc
td(on)
tr
2.4 3.6
6.5 9.8
nC
VCC = 400V
VGE = 15V
See Fig. 8
25
28
—
—
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
630 950
710 1100
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail"
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.14
2.58
—
—
mJ See Fig. 9, 10, 14
2.72 4.3
24
31
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 8.0A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
810
1300
3.94
7.5
VGE = 15V, RG = 100Ω
Energy losses include "tail"
mJ See Fig. 11, 14
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
nH
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
280
30
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
4.0
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω,
(See fig. 13a)
ꢀ
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4RC10S
For both:
Triangular wave:
Duty cycle: 50%
= 125˚C
T
J
T
= 90˚C
sink
Gate drive as specified
Power Dissipation = 0.70W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
Ideal diodes
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
V
= 15V
V
= 50V
GE
CC
20µs PULSE WIDTH
5µsPULSEWIDTH
1
0.8
1.2
V
1.6
2.0
2.4 2.8 3.2
6
8
10
12
V
, Gate-to-Emitter Voltage (V)
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4RC10S
3.00
2.50
2.00
1.50
1.00
16
V
= 15V
GE
80 us PULSE WIDTH
I
= 16A
C
12
8
I
I
=
=
8A
4A
C
C
4
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
T
75
100
125
150
°
, Junction Temperature ( C)
T
°
, Case Temperature ( C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4RC10S
20
15
10
5
500
400
300
200
100
0
V
I
= 400V
= 8A
CC
C
V
C
= 0V,
f = 1MHz
C
GE
= C + C
SHORTED
ce
ies
ge
gc ,
gc
C
= C
gc
res
C
= C + C
ce
oes
C
ies
C
C
oes
res
0
1
10
100
0
5
10
15
20
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 8 - Typical Gate Charge vs.
Fig. 7 - Typical Capacitance vs.
Gate-to-Emitter Voltage
Collector-to-Emitter Voltage
2.8
100
10
1
V
V
T
= 480V
R
= Ohm
G
100Ω
CC
GE
J
= 15V
= 25
V
= 15V
= 480V
GE
°
C
V
CC
I
= 8.0A
C
I
C
=
16A
I
I
=
=
8A
4A
C
2.7
C
2.6
0.1
0
20
40
60
80
100
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
R , Gate Resistance ( Ω )
T , Junction Temperature ( C )
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
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5
IRG4RC10S
100
10
1
12
V
T
= 20V
100 Ω
R
G
T
J
=
GE
J
= 125 oC
°
= 150 C
V
V
GE
= 480V
= 15V
CC
10
8
6
4
2
SAFE OPERATING AREA
10
0
1
100
1000
0
4
8
12
16
V
, Collector-to-Emitter Voltage (V)
I
, Collector Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector Current
L
D.U.T.
480V
4 X IC@25°C
V
*
RL =
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse w idth and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
6
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IRG4RC10S
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d (off)
Waveforms
10%
5%
I
C
t
f
t
r
t
d(o n )
t=5µs
E
E
o ff
o n
E
= (E
+E
o ff
)
ts
o n
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
2
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
LEAD ASSIGNMENTS
1.02 (.040)
1.64 (.025)
1 - GATE
1
3
2 - COLLECTOR
0.51 (.020)
MIN.
3 - EMITTER
- B -
4 - COLLECTOR
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M
A
M
B
NOTES:
2.28 (.090)
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIM ENSION : INCH.
4.57 (.180)
CONFORMS TO JEDEC OUTLINE TO-252AA.
DIMENSIONS SHOW N ARE BEFORE SOLDER DIP,
SOLDER DIP M AX. +0.16 (.006).
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7
IRG4RC10S
Tape & Reel Information
TO-252AA
TR
TRL
T RR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTIO N
FEED DIR ECT IO N
NO T ES :
1. CO NT RO LLING DIM EN SIO N : M ILLIM ET ER.
2. ALL DIM EN SIO NS ARE SH O W N IN M ILLIM ETERS ( INCHES ).
3. O UTLINE CO N FO RM S T O EIA-481 & EIA-541.
13 INC H
16 m m
NO TES :
1. O U TLINE CO NFO RM S TO EIA-481.
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Data and specifications subject to change without notice.
8/99
8
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