IRG4RC10UDTRPBF [INFINEON]
Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3;
| 型号： | IRG4RC10UDTRPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总11页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95328
IRG4RC10UDPbF
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
VCES = 600V
UltraFast: Optimized for medium operating
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode).
VCE(on) typ. = 2.15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
previous generation
IGBT co-packaged with HEXFREDTM ultrafast,
@VGE = 15V, IC = 5.0A
tf (typ.) = 140ns
ultra-soft-recovery anti-parallel diodes for use
in
E
n-channel
bridge configurations
Industry standard TO-252AA package
Lead-Free
Benefits
Generation 4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
D-PAK
Lower losses than MOSFET's conduction and Diode
TO-252AA
losses
Absolute Maximum Ratings
Parameter
Max.
600
8.5
5.0
34
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
A
ILM
34
IF @ TC = 100°C
4.0
16
IFM
VGE
± 20
38
V
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating
W
PD @ TC = 100°C
15
TJ
Junction
and-55
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Thermal Resistance
Parameter
Min.
Typ.
Max.
3.3
Units
°C/W
RθJC
RθJC
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
7.0
50
0.3 (0.01)
g (oz)
Details of note through are on the last page
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1
6/2/04
IRG4RC10UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage 600
V
VGE = 0V, IC = 250µA
0.54
V/°C VGE = 0V, IC = 1.0mA
IC = 5.0A
VCE(on)
Collector-to-Emitter Saturation Voltage
2.15 2.6
VGE = 15V
2.61
2.30
V
IC = 8.5A
See Fig. 2, 5
IC = 5.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-8.7
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.8 4.2
S
VCE = 100V, IC = 5.0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
250
1000
µA
V
GE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.5 1.8
1.4 1.7
V
IC = 4.0A
See Fig. 13
IC = 4.0A, TJ = 125°C
VGE = ±20V
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
15 22
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
IC = 5.0A
Qge
Qgc
td(on)
tr
2.6 4.0
5.8 8.7
nC
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
40
16
ns
IC = 5.0A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
FallTime
87 130
140 210
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
0.14
0.12
mJ
ns
0.26 0.33
td(on)
tr
td(off)
tf
38
18
42
57
TJ = 150°C, See Fig. 11, 18
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
Turn-Off Delay Time
FallTime
95
250
0.45
7.5
270
21
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
3.5
28
= 1.0MHz
TJ = 25°C See Fig.
38
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 4.0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
2.9 5.2
3.7 6.7
VR = 200V
Qrr
40
60
nC
70 105
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
280
235
2
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IRG4RC10UDPbF
1.6
1.2
0.8
0.4
0.0
Duty cycle: 50%
T
= 125°C
= 55°C
J
T
sink
Gate drive as specified
Power Dissipation =
W
1.4
Square wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
T = 25oC
J
T = 150oC
J
10
T = 150oC
J
T = 25oC
J
V
= 15V
V
= 50V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
0.1
1
1
10
5
6
7
8
9
10
11
12
13
14
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4RC10UDPbF
10
5.0
4.0
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
8
6
4
2
0
I
= 10A
C
5.0 A
=
I
I
C
C
= 2.5A
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Case Temperature ( C)
°
T , Junction Temperature ( C)
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig.6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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4
IRG4RC10UDPbF
500
400
300
200
100
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
V
CC
I
C
= 400V
= 5.0A
GE
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
C
C
oes
res
4
0
1
10
100
0
4
8
12
16
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
0.30
0.25
0.20
10
100Ω
V
V
= 480V
R
= Ohm
= 15V
CC
GE
G
= 15V
V
GE
°
V
= 480V
T
= 25 C
J
C
CC
I
= 5.0A
I
=
A
10
C
1
5.0A
I
I
=
=
A
C
A
2.5
C
0.1
0.01
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
50
60
70
, Gate Resistance (Ω)
G
80
90
100
R
T , Junction Temperature ( C )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
JunctionTemperature
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5
IRG4RC10UDPbF
100
10
1
1.4
V
T
= 20V
R
T
V
=100Ω
G
J
CC
GE
J
= 125 oC
°
= 150 C
= 480V
= 15V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GE
SAFE OPERATING AREA
10
1
100
1000
0
2
4
6
8
10
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
100
T = 150°C
J
10
T = 125°C
J
T = 25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - VFM ( V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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6
IRG4RC10UDPbF
50
45
40
35
30
25
20
14
12
10
8
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
I
F
I
I
= 8.0A
= 4.0A
F
F
6
4
2
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR= 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
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Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
7
IRG4RC10UDPbF
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
90% Ic
D.U.T.
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
VceIcdt
Eoff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
∫
t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
VceIcdt
t1
Eon =
t4
∫
Erec =
Vd Ic dt
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4RC10UDPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIGNMENTS
1 - GATE
1
2
3
0.51 (.020)
MIN.
2 - DRAIN
- B -
3 - SOURCE
4 - DRAIN
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M A M B
NOTES:
2.28 (.090)
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
4.57 (.180)
CONFORMS TO JEDEC OUTLINE TO-252AA.
DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
D-Pak (TO-252AA) Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WEEK 16
IRFR120
916A
34
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
12
LINE A
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB L Y
LOT CODE
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFR120
P916A
34
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
YEAR 9 = 1999
12
ASSEMBLY
LOT CODE
WEEK 16
A = AS S E MBLY S IT E CODE
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9
IRG4RC10UDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 100Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 6/04
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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