IRG4RC10UD [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 2.15V ， @ VGE = 15V ， IC = 5.0A ）
| 型号： | IRG4RC10UD |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A) |
| 文件： | 总10页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD91571A
IRG4RC10UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• UltraFast: Optimized for medium operating
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode).
VCES = 600V
VCE(on) typ. = 2.15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
G
@VGE = 15V, IC = 5.0A
tf (typ.) = 140ns
E
n-channel
• Industry standard TO-252AA package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
D-PAK
• Lower losses than MOSFET's conduction and Diode
losses
TO-252AA
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
8.5
IC @ TC = 100°C
5.0
ICM
34
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
34
IF @ TC = 100°C
4.0
IFM
16
± 20
VGE
V
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
38
W
PD @ TC = 100°C
15
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
Max.
3.3
Units
°C/W
RθJC
RθJC
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
–––
7.0
–––
50
0.3 (0.01)
–––
g (oz)
Details of note through are on the last page
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1
12/30/00
IRG4RC10UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage 600
—
—
—
V
VGE = 0V, IC = 250µA
—
—
—
—
3.0
—
0.54
V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
2.15 2.6
IC = 5.0A
VGE = 15V
2.61
2.30
—
—
—
V
IC = 8.5A
See Fig. 2, 5
IC = 5.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-8.7
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.8 4.2
—
S
VCE = 100V, IC = 5.0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
—
250
1000
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.5 1.8
1.4 1.7
V
IC = 4.0A
See Fig. 13
IC = 4.0A, TJ = 125°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
15 22
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IC = 5.0A
Qge
Qgc
td(on)
tr
2.6 4.0
5.8 8.7
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
40
16
—
—
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
td(off)
tf
Turn-Off Delay Time
FallTime
87 130
140 210
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
0.14
0.12
—
—
mJ
ns
E
ts
0.26 0.33
td(on)
tr
td(off)
tf
38
18
—
—
—
—
—
—
—
—
—
42
57
TJ = 150°C, See Fig. 11, 18
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
Turn-Off Delay Time
FallTime
95
250
0.45
7.5
270
21
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
3.5
28
ƒ = 1.0MHz
TJ = 25°C See Fig.
38
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 4.0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
2.9 5.2
3.7 6.7
VR = 200V
Qrr
40
60
nC
70 105
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
280
235
—
—
2
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IRG4RC10UD
1.6
1.2
0.8
0.4
0.0
Duty cycle: 50%
T
T
= 125°C
J
55°C
=
sink
G ate drive as specified
Power Dissipation =
W
1.4
Squa re wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
T = 25oC
J
T = 150oC
J
10
T = 150oC
J
T = 25oC
J
V
= 15V
V
= 50V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
0.1
1
1
10
5
6
7
8
9
10 11 12 13
14
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
GE
CE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4RC10UD
10
5.0
4.0
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
8
6
4
2
0
I
= 10A
C
5.0 A
=
I
I
C
C
= 2.5A
25
50
T
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Case Temperature ( C)
°
, Junction Temperature ( C)
T
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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4
IRG4RC10UD
500
400
300
200
100
0
20
16
12
8
V
C
= 0V,
f = 1MHz
C SHORTED
ce
V
CC
I
C
= 400V
= 5.0A
GE
= C + C
ies
ge
gc
gc ,
C
= C
res
C
= C + C
oes
ce
gc
C
ies
C
C
oes
res
4
0
1
10
100
0
4
8
12
16
V
, Collector-to-Emitter Voltage (V)
Q
, Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
0.30
0.25
0.20
10
100Ω
= 15V
= 480V
V
V
= 480V
R
= Ohm
CC
GE
G
= 15V
V
GE
°
T
= 25
C
V
CC
J
C
I
= 5.0A
I
=
=
A
10
C
1
5.0A
I
I
A
C
= 2.5A
C
0.1
0.01
-60 -40 -20
0
20 40 60 80 100 120 140 160
50
60
70
80
90
100
°
T , Junction Temperature ( C )
J
R
, Gate Resistance (Ω)
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
JunctionTemperature
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5
IRG4RC10UD
100
10
1
1.4
V
T
= 20V
100Ω
=
R
T
V
G
J
CC
GE
J
= 125 oC
°
= 150 C
= 480V
= 15V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GE
SAFE OPERATING AREA
10
1
100
1000
0
2
4
6
8
10
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
100
T
= 150°C
= 125°C
10
J
T
J
T
=
25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - VFM ( )
V
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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6
IRG4RC10UD
50
45
40
35
30
25
20
14
12
10
8
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
F
I
I
I
= 8.0A
= 4.0A
F
F
6
4
2
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14- Typical Reverse Recovery vs. dif/dt
200
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
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Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
7
IRG4RC10UD
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
90% Ic
D.U.T.
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
VceIcdt
Eoff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
∫
t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
VceIcdt
t1
E on =
t4
∫
Erec =
Vd Ic dt
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4RC10UD
Vg
GATE SIG NAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
L
D.U.T.
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test
Circuit
Package Outline
TO-252AAOutline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
-
A
4
-
1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
1
2
3
0.51 (.020)
MIN.
LEAD ASSIGNMENTS
- B
-
1 - GATE
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
2 - COLLECTOR
3 - EMITTER
4 - COLLECTOR
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M
A M B
N OTES:
2.28 (.090)
1
2
3
4
DIM EN SIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIM ENSION : INCH.
4.57 (.180)
CONFORMS TO JEDEC OUTLINE TO-252AA.
DIM EN SIONS SHOW N ARE BEFORE SOLDER DIP,
SOLDER DIP M AX. +0.16 (.006).
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9
IRG4RC10UD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 100Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Tape & Reel Information
TO-252AA
TR
TR L
TR R
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .64 1 )
15.7 ( .61 9 )
12.1 ( .47 6 )
11.9 ( .46 9 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIR ECTIO N
FEED D IREC TIO N
N O TES
:
1 . C O NT RO LLIN G DIM EN SIO N : M ILLIM ETER.
2 . ALL D IM EN SIO N S ARE SHO W N IN M ILLIMETERS ( IN CH ES ).
3 . O U TLINE C O N FO R M S TO EIA-481 & EIA-541.
13 INC H
16 mm
N O TES :
1. O U TLINE CO N FO R M S TO EIA-481.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
10
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