IRG8P15N120KDPBF_15 [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRG8P15N120KDPBF_15 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总11页 (文件大小：625K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 1200V
C
IC = 15A, TC =100°C
tSC 10µs, TJ(max) = 150°C
CE(ON) typ. = 1.7V @ IC = 10A
G
E
V
IRG8P15N120KDPbF
IRG8P15N120KD‐EPbF
TO‐247AD
n-channel
TO‐247AC
Applications
G
Gate
C
E
• Industrial Motor Drive
• UPS
Collector
Emitter
• Solar Inverters
• Welding
Features
Benefits
Benchmark Low VCE(ON)
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
Environmentally friendly
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRG8P15N120KDPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
IRG8P15N120KD-EPbF
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Max.
Units
VCES
1200
V
IC @ TC = 25°C
IC @ TC = 100°C
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
30
15
ICM
ILM
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
30
40
20
11
40
A
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
±30
125
V
PD @ TC = 25°C
W
PD @ TC = 100°C
Maximum Power Dissipation
50
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
1.0
1.7
–––
–––
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
1
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
1200
—
—
1.1
—
—
V
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
—
—
5.0
1.7
2.0
—
2.0
—
6.5
V
IC = 10A, VGE = 15V, TJ = 25°C
IC = 10A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 400µA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-16
—
mV/°C VCE = VGE, IC = 400µA (25°C-150°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
5.7
1.0
1.0
—
2.1
2.4
—
30
—
±100
2.7
—
S
µA
V
V
CE = 50V, IC = 10A, PW = 20µs
GE = 0V, VCE = 1200V
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
VGE = 0V, VCE = 1200V, TJ = 150°C
mA
nA VGE = ±30V
V
IF = 10A
IF = 10A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
—
—
—
—
—
—
—
65
6.0
40
0.6
0.6
1.2
15
98
9.0
60
—
—
—
—
—
—
—
—
IC = 10A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
nC
mJ
VCC = 600V
IC = 10A, VCC = 600V, VGE=15V
RG = 10, TJ = 25°C
Energy losses include tail & diode
reverse recovery
20
ns
170
200
0.9
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
1.1
2.0
15
—
—
—
—
—
mJ
IC = 10A, VCC = 600V, VGE=15V
RG = 10, TJ = 150°C
Energy losses include tail & diode
reverse recovery
20
ns
td(off)
Turn-Off delay time
250
tf
Fall time
—
—
—
—
330
1290
60
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 40A
30
FULL SQUARE
VCC = 960V, Vp ≤ 1200V
RBSOA
Reverse Bias Safe Operating Area
VGE = +20V to 0V
TJ = 150°C,VCC = 600V, Vp ≤ 1200V
VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
0.8
60
26
—
—
—
mJ
ns
A
VCC = 600V, IF = 10A
VGE = 15V, Rg = 10
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
30
25
20
15
10
5
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 50W
Square Wave:
VCC
I
Diode as specified
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
10
10µsec
100µsec
10
1
1msec
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
10000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 2 - Forward SOA
Fig. 3 - Reverse Bias SOA
TC = 25°C; TJ ≤ 150°C; VGE = 15V
TJ = 150°C; VGE = 20V
100
10
1
100
10
Tc = -40°C
Tc = 25°C
Tc = 150°C
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
1.0
0.1
GE
GE
GE
GE
GE
0.1
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Saturation Voltage
Fig. 4 - Typ. IGBT Output Characteristics
VGE = 15V; tp = 20µs
TJ = 25°C; tp = 20µs
3
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
100
10
1
16
14
12
10
8
V
V
= 600V
= 400V
CES
CES
6
T = -40°C
J
4
T = 25°C
J
2
T = 150°C
J
0.1
0
4
6
8
10
12
14
16
0
20
40
60
V
(V)
Q
, Total Gate Charge (nC)
GE
G
Fig. 6 - Typ. Transfer Characteristics
Fig. 7 - Typical Gate Charge vs. VGE
VCE = 50V; tp = 20µs
ICE = 10A
2.5
1000
100
10
E
E
E
@ Tj = 150°C
OFF
t
F
@ Tj = 150°C
@ Tj = 150°C
ON
RR
2.0
1.5
1.0
0.5
0.0
td
OFF
E
E
E
@ Tj = 25°C
OFF
@ Tj = 25°C
@ Tj = 25°C
ON
RR
t
R
td
ON
1
0
4
8
12
16
20
2
4
6
8
10 12 14 16 18 20
(A)
I
(A)
C
I
C
Fig. 9 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V
Fig. 8 - Typ. Energy Loss vs. IC
VCE = 600V, RG = 10; VGE = 15V
1000
2.5
2.0
1.5
1.0
0.5
0.0
E
Tj = 150°C
ON @
@ Tj = 150°C
td
OFF
E
E
OFF
@ Tj = 150°C
RR
t
EON @ Tj = 25°C
EOFF @ Tj = 25°C
ERR @ Tj = 25°
F
100
10
1
td
ON
t
R
8
16
24
32
40
48
56
8
16
24
32
Rg ( )
40
48
56
R
( )
G
Fig. 11 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 10A; VGE = 15V
Fig. 10 - Typ. Energy Loss vs. RG
VCE = 600V, ICE = 10A; VGE = 15V
4
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
1200
30
28
26
24
22
20
18
16
R
G
= 10
= 22
= 47
= 10
V
= 600V
CC
Tj = 150°C
1100
1000
900
800
700
600
500
R
G
V
= 15V
R
GE
= 10A
G
I
R
F
G
R
= 10
G
R
=
G
R
=
G
R
=
G
4
8
12
(A)
16
20
600 700 800 900 1000 1100 1200 1300
I
di /dt (A/µs)
F
F
Fig. 12 - Typ. IRR vs. di/dt
Fig. 13 - Typ. Diode ERR vs. IF
TJ = 150°C
100
10
1
-40°C
25°C
150°C
0.1
0.0
1.0
2.0
3.0
(V)
4.0
5.0
6.0
V
F
Fig. 14 - Typ. Diode Forward Voltage
Drop Characteristics
5
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
10
1
D = 0.50
0.20
Ri (°C/W)
0.05998
0.30139
0.38387
0.25341
i (sec)
0.000058
0.000138
0.002914
0.020999
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
R4
R4
J J
0.02
0.01
CC
1 1
2 2
3 3
4 4
0.01
0.001
0.0001
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 15 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
Ri (°C/W)
i (sec)
0.10
R1
R1
R2
R2
R3
R3
R4
R4
0.04595
0.57951
0.67140
0.40462
0.000029
0.000372
0.004176
0.047311
0.1
0.05
J J
CC
1 1
0.02
0.01
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
DUT /
VCC
DRIVER
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
(Board Stray Inductance 180nH)
C force
100K
D1 22K
C sense
DUT
G force
0.0075µF
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
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November 4, 2014
IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
800
700
600
500
400
300
200
100
0
80
VCE
70
60
50
40
30
20
10
0
ICE
-100
-10
-10.00
0.00
10.00
20.00
Time (uS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
8
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IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
November 4, 2014
IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
D A T E C O D E
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
L O T C O D E 5 6 5 7
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
Y E A R
W E E K 3 5
L IN E
0
=
2 0 0 0
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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November 4, 2014
IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
Qualification Information†
Qualification Level
Industrial†
(per JEDEC JESD47F) ††
TO-247AC
TO-247AD
N/A
Moisture Sensitivity Level
RoHS Compliant
N/A
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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November 4, 2014
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