IRGBC30F [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A); 绝缘栅双极晶体管（ VCES = 600V ， VGE @ = 15V ， IC = 17A）
| 型号： | IRGBC30F |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A) |
| 文件： | 总6页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.689A
IRGBC30F
INSULATED GATE BIPOLAR TRANSISTOR
Fast Speed IGBT
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCES = 600V
V
CE(sat) ≤ 2.1V
G
@VGE = 15V, IC = 17A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
31
17
IC @ TC = 100°C
A
ICM
120
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
120
VGE
±20
V
mJ
W
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
10
PD @ TC = 25°C
100
PD @ TC = 100°C Maximum Power Dissipation
42
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
1.2
—
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
0.50
—
—
80
—
2.0 (0.07)
—
g (oz)
C-57
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IRGBC30F
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
600
20
—
—
—
—
—
—
V
V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.69
V/°C VGE = 0V, IC = 1.0mA
IC = 17A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.8 2.1
VGE = 15V
—
2.4
2.2
—
—
—
V
IC = 31A
See Fig. 2, 5
—
IC = 17A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
10
—
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
6.1
—
—
S
VCE = 100V, IC = 17A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
250
1000
±100
µA
—
—
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
—
—
nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Min. Typ. Max. Units
27 30
4.1 5.9
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IC = 17A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
12
25
21
15
—
—
IC = 17A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
Fall Time
210 320
300 500
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.30
2.1
—
—
mJ
ns
See Fig. 9, 10, 11, 14
2.4 3.5
td(on)
tr
td(off)
tf
25
21
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 17A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
See Fig. 10, 14
Turn-Off Delay Time
Fall Time
290
590
3.6
7.5
670
100
10
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Pulse width 5.0µs,
single shot.
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
RG= 23Ω, ( See fig. 13a )
C-58
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IRGBC30F
40
For both:
Triangula r w ave:
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
30
G ate drive as spe cified
Powe r Dissipa tion = 2 1W
Clamp voltage:
80% of rated
Square w ave:
60% of rated
20
voltage
10
Ideal diodes
0
0.1
1
10
100
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=I PK
)
1000
100
10
10 00
1 00
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
10
T
= 25°C
J
1
V
= 100V
V
= 15V
CC
G E
5µs P ULSE W IDTH
20µs PULSE W IDTH
0.1
1
5
10
15 20
1
10
V
, G ate-to-E m itter Voltage (V )
VC E , Collector-to-Emitter Voltage (V)
G E
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Revision 0
C-59
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IRGBC30F
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
V
= 15V
V
= 15V
G E
G E
80µs P ULSE W IDTH
I
= 34A
C
I
= 17A
= 8.5A
C
C
I
-60 -40 -20
0
20
40
60
80 1 00 120 140 160
25
50
75
100
125
150
T
, Case Temperature (°C)
TC , Case Temperature (°C)
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
10
1
D
=
0 .50
0.2 0
0.1 0
0.0 5
P
D M
0.1
t
1
0.02
0.01
t
2
SIN G LE P UL SE
(T H ER M A L R ES P O NS E)
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.00 1
0.01
0.1
10
t
, Rectangular Pulse D ura tion (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-60
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IRGBC30F
1400
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
V
I
= 400V
= 17A
GE
ies
res
oes
C E
C
= C + C
,
C
ce
SHORTED
ge
gc
= C
gc
1200
1000
800
600
400
200
0
= C + C
ce
gc
C
ies
C
oes
4
C
res
0
1
10
100
0
5
10
15
20
25
30
V
, C ollector-to-E m itter V oltage (V )
Q g , Total Gate Charge (nC)
C E
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
2.7
2.6
2.5
2.4
2.3
2.2
10
V
V
T
I
= 480V
= 15V
= 25°C
= 17A
CC
G E
C
I
= 34A
C
C
I
= 17A
= 8.5A
C
C
I
Ω
R
V
V
= 23
= 15V
= 480V
G
GE
CC
1
0
10
20
30
40
50
60
-60 -40 -20
0
20
40
60
80 100 120 140 160
R G , Gate Resistance (
Ω
)
T , Case Temperature (°C)
C
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-61
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IRGBC30F
10
1000
100
10
Ω
R
T
V
V
= 23
V
T
= 20V
= 125°C
G
G E
J
= 150°C
= 480V
= 15V
C
CC
G E
8
6
4
2
SA FE O PERATING AREA
1
1
10
100
1000
0
10
20
30
40
V
, Collector-to-Em itter Voltage (V)
I
, Collector-to-E mitter Current (A)
C E
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1 - JEDEC Outline TO-220AB
Section D - page D-12
C-62
To Order
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