IRGBC30M-S [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A); 绝缘栅双极晶体管（ VCES = 600V ， VGE @ = 15V ， IC = 16A）
| 型号： | IRGBC30M-S |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A) |
| 文件： | 总6页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.1133
IRGBC30M-S
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
Fast IGBT
Features
C
• Short circuit rated - 10µs @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
VCES = 600V
10kHz) See Fig. 1 for Current vs. Frequency curve
G
V
CE(sat) ≤ 2.9V
@VGE = 15V, IC = 16A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
SMD-220
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
26
IC @ TC = 100°C
16
A
ICM
52
ILM
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
52
tsc
10
±20
µs
V
VGE
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
10
mJ
W
PD @ TC = 25°C
100
PD @ TC = 100°C Maximum Power Dissipation
42
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
1.2
40
Units
°C/W
g (oz)
RθJC
RθJA
RθJA
Wt
Junction-to-Ambient, (PCB mount)**
Junction-to-Ambient, typical socket mount
Weight
—
—
—
—
80
—
2 (0.07)
—
** When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
Revision 1
C-341
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IRGBC30M-S
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
600
20
—
—
—
—
—
V
V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.65
1.9
2.7
2.2
—
—
V/°C VGE = 0V, IC = 1.0mA
IC = 14A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.9
—
VGE = 15V
—
V
IC = 24A
See Fig. 2, 5
—
—
IC = 14A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-12
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
3.3 6.5
—
S
VCE = 100V, IC = 14A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
250
1000
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
See Fig. 8
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
35
7.4
14
31
31
53
11
21
—
—
IC = 16A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
IC = 16A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
Fall Time
280 420
310 470
Eon
Eoff
Ets
tsc
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.4
1.9
—
—
mJ
µs
See Fig. 9, 10, 11, 14
2.3 3.5
—
—
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 23Ω, VCPK < 500V
TJ = 150°C,
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
31
30
—
—
—
—
—
—
—
—
—
ns
IC = 16A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
See Fig. 10, 14
Turn-Off Delay Time
Fall Time
530
660
4.4
7.5
750
110
9.3
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Pulse width 5.0µs,
single shot.
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
RG= 23Ω, ( See fig. 13a )
C-342
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IRGBC30M-S
30
For both:
Triangular wave:
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
Gate drive as specified
Power Dissipation = 21W
Clamp voltage:
80% of rated
20
Square wave:
60% of rated
voltage
10
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=I PK
)
100
10
1
100
T = 25°C
J
T = 150°C
J
T = 150°C
J
TJ = 25°C
10
VGE = 15V
20µs PULSE WIDTH
VCC = 100V
5µs PULSE WIDTH
A
A
0.1
1
0.1
1
10
5
10
15
20
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-343
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IRGBC30M-S
30
25
20
15
10
5
5.0
4.0
3.0
2.0
1.0
0.0
VGE = 15V
VGE = 15V
80µs PULSE WIDTH
IC = 32A
IC = 16A
IC = 8.0A
A
A
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
T
, Case Temperature (°C)
T , Case Temperature (°C)
C
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
10
1
D
=
0 .50
0.2 0
0.1 0
0.0 5
P
D M
0.1
t
1
0.02
0.01
t
2
SIN G LE P UL SE
(T H ER M A L R ES P O NS E)
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.00 1
0.01
0.1
10
t
, Rectangular Pulse D ura tion (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGBC30M-S
20
16
12
8
1400
V
C
C
C
= 0V,
f = 1MHz
VCE = 400V
IC = 16A
GE
ies
= C + C
,
C
ce
SHORTED
ge
gc
= C
gc
1200
1000
800
600
400
200
0
res
oes
= C + C
ce
gc
C
C
ies
oes
4
C
res
A
A
0
1
10
100
0
10
20
30
40
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
g
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
100
10
1
2.60
2.55
2.50
2.45
2.40
2.35
2.30
Ω
RG = 23
VCC = 480V
VGE = 15V
TC = 25°C
IC = 16A
VGE = 15V
VCC = 480V
IC = 32A
IC = 16A
IC = 8.0A
A
A
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
60
T , Case Temperature (°C)
C
R
, Gate Resistance ( )
Ω
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
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IRGBC30M-S
12
100
10
1
Ω
RG = 23
VGE = 20V
TJ = 125°C
TC = 150°C
VCC = 480V
VGE = 15V
10
8
SAFE OPERATING AREA
6
4
2
A
A
0
0
10
20
30
40
1
10
100
1000
I , Collector-to-Emitter Current (A)
V
, Collector-to-Emitter Voltage (V)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 2 - SMD-220 Section D - page D-12
C-346
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