IRGC75B120UBPBF [INFINEON]
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2;
| 型号： | IRGC75B120UBPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 栅 功率控制 晶体管 |
| 文件： | 总1页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93871
IRGC75B120UB
Die in Wafer Form
Features
1200V
C
• GEN5 Non Punch Through (NPT) Technology
• UltraFast
• 10µs Short Circuit Capability
• Square RBSOA
IC(nom)=75A
VCE(on) typ.= 3.1V @
IC(nom) @25°C
UltraFastIGBT
Short Circuit Rated
150mm Wafer
• Positive VCE(on) Temperature Coefficient
G
Benefits
• Benchmark Efficiency above 20KHz
• Optimized for Welding, UPS, and Induction Heating
• Rugged with UltraFast Performance
E
• Excellent Current Sharing in Parallel Operation
Electrical Characteristics (Wafer Form)
Parameter
VCE (on)
V(BR)CES
VGE(th)
ICES
Description
Guaranteed (min, max)
TestConditions
Collector-to-Emitter Saturation Voltage 1.54V min, 1.78V max IC = 10A, TJ = 25°C, VGE = 15V
Collector-to-Emitter Breakdown Voltage
Gate Threshold Voltage
1200V min
4.4V min, 6.0V max
30µAmax
TJ = 25°C, ICES = 750µA, VGE = 0V
VGE = VCE , TJ =25°C, IC = 750µA
TJ = 25°C, VCE = 1200V
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
IGES
± 2 µA max
TJ = 25°C, VGE = +/-20V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4µm)
0.443" x 0.443"
Wafer Diameter
150mm, with std. < 100 > flat
185µm, +/-15µm
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01-5378
100µm
Reject Ink Dot Size
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Die Outline
NOTES:
11.25
[.443]
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: [INCH].
3. LETTER DESIGNATION:
9.854
[.388]
S = SOURCE
G = GAT E
SK = SOURCE KELVIN
IS = CURRENTSENSE
E = EMITTER
4. DIMENSIONAL TOLERANCES:
BONDING PADS:
WIDT H
<
<
>
>
0.635 T OLERANCE =
+ /- 0.013
9.773
[.385]
[.0250] TOLERANCE = + /- [.0005]
0.635 T OLERANCE + /- 0.025
EMITTER
1.32
[.052]
&
=
LENGTH
[.0250] TOLERANCE = + /- [.0010]
OVERALL DIE:
WIDT H
<
<
>
>
1.270 TOLERANCE = + /- 0.102
[.050] TOLERANCE = + /- [.004]
1.270 TOLERANCE = + /- 0.203
[.050] TOLERANCE = + /- [.008]
G
&
1.99
[.078]
LENGTH
01-5378
www.irf.com
2/14/2000
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