IRGI4085PBF [INFINEON]

PDP TRENCH IGBT; PDP TRENCH IGBT


型号：	IRGI4085PBF
厂家：	Infineon
描述：	PDP TRENCH IGBT PDP TRENCH IGBT 晶体晶体管光电二极管双极性晶体管栅局域网
文件：	总7页 (文件大小：769K)
中文：	中文翻译
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PD - 97285

IRGI4085PbF

PDP TRENCH IGBT

Key Parameters

Features

V_CEmin

330

Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery

circuits in PDP applications

_CE(ON)typ. @ I_C= 28A

_RPmax @ T_C= 25°C

1.21

210

150

Low V_CE(on)and Energy per Pulse (E_PULSE

for improved panel efficiency

)

T_Jmax

°C

High repetitive peak current capability

Lead Free package

TO-220AB

Full-Pak

n-channel

Gate

Collector

Emitter

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced

trenchIGBTtechnologytoachievelowV_CE(on)andlowE_PULSE^TMratingpersiliconareawhichimprovepanel

efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current

capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP

applications.

Absolute Maximum Ratings

Max.

Parameter

Units

V_GE

±30

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_RP@ T_C= 25°C

P_D@T_C= 25°C

P_D@T_C= 100°C

Continuous Collector Current, V_GE@ 15V

Continuous Collector, V_GE@ 15V

Repetitive Peak Current c

Power Dissipation

210

Power Dissipation

0.30

Linear Derating Factor

W/°C

°C

T_J

-40 to + 150

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lbxin (1.1Nxm)

Thermal Resistance

Parameter

Typ.

–––

Max.

3.29

Units

°C/W

R_θJC

Junction-to-Case

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05/30/07

IRGI4085PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Conditions

V_GE= 0V, I_CE= 1 mA

Parameter

Min. Typ. Max. Units

BV_CES

Collector-to-Emitter Breakdown Voltage

Emitter-to-Collector Breakdown Voltagee

Breakdown Voltage Temp. Coefficient

330

–––

V_GE= 0V, I_CE= 1 A

V_(BR)ECS

–––

Reference to 25°C, I_CE= 1mA

V_GE= 15V, I_CE= 15A e

V_GE= 15V, I_CE= 28A e

V_GE= 15V, I_CE= 40A e

V_GE= 15V, I_CE= 70A e

V_GE= 15V, I_CE= 120A e

V_GE= 15V, I_CE= 70A, T_J= 150°C e

V_CE= V_GE, I_CE= 500µA

∆ΒV_CES/∆T_J

–––

0.31

1.05

V/°C

1.21 1.50

1.35

1.68

2.23

1.90

–––

-10

2.0

5.0

100

–––

5.0

V_CE(on)

Static Collector-to-Emitter Voltage

–––

2.6

V_GE(th)

Gate Threshold Voltage

∆V_GE(th)/∆T_J

I_CES

Gate Threshold Voltage Coefficient

Collector-to-Emitter Leakage Current

–––

100

––– mV/°C

_CE= 330V, V_GE= 0V

V_CE= 330V, V_GE= 0V, T_J= 100°C

_CE= 330V, V_GE= 0V, T_J= 150°C

–––

100

-100

–––

µA

V_GE= 30V

I_GES

Gate-to-Emitter Forward Leakage

Gate-to-Emitter Reverse Leakage

Forward Transconductance

Total Gate Charge

Gate-to-Collector Charge

Turn-On delay time

Rise time

V_GE= -30V

V_CE= 25V, I_CE= 25A

V_CE= 200V, I_C= 25A, V_GE= 15Ve

g_fe

Q_g

Q_gc

t_d(on)

t_r

I_C= 25A, V_CC= 196V

R_G= 10Ω, L=200µH, L_S= 150nH

T_J= 25°C

t_d(off)

t_f

t_d(on)

t_r

t_d(off)

t_f

Turn-Off delay time

Fall time

180

102

I_C= 25A, V_CC= 196V

R_G= 10Ω, L=200µH, L_S= 150nH

T_J= 150°C

Turn-On delay time

Rise time

Turn-Off delay time

Fall time

234

185

–––

t_st

V_CC= 240V, V_GE= 15V, R_G= 5.1Ω

Shoot Through Blocking Time

µJ

L = 220nH, C= 0.40µF, V_GE= 15V

V_CC= 240V, R_G= 5.1Ω, T_J= 25°C

L = 220nH, C= 0.40µF, V_GE= 15V

V_CC= 240V, R_G= 5.1Ω, T_J= 100°C

–––

854

977

–––

E_PULSE

Energy per Pulse

_GE= 0V

C_ies

C_oes

C_res

L_C

Input Capacitance

––– 2287 –––

V_CE= 30V

Output Capacitance

–––

141

–––

ƒ = 1.0MHz,

See Fig.13

Reverse Transfer Capacitance

Internal Collector Inductance

5.0

Between lead,

nH 6mm (0.25in.)

from package

L_E

Internal Emitter Inductance

–––

and center of die contact

Notes:

Half sine wave with duty cycle = 0.10, ton=2µsec.

R is measured at T_Jof approximately 90°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

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IRGI4085PbF

600

500

400

300

200

100

600

500

400

300

200

100

Top

= 18V

= 15V

= 12V

= 10V

= 8.0V

= 6.0V

Top

= 18V

= 15V

= 12V

= 10V

= 8.0V

= 6.0V

Bottom

(V)

Fig 2. Typical Output Characteristics @ 75°C

Fig 1. Typical Output Characteristics @ 25°C

400

Top

= 18V

= 15V

= 12V

= 10V

= 8.0V

= 6.0V

Top

= 18V

= 15V

= 12V

= 10V

= 8.0V

= 6.0V

300

200

100

300

200

100

Bottom

(V)

Fig 3. Typical Output Characteristics @ 125°C

Fig 4. Typical Output Characteristics @ 150°C

500

= 25A

400

300

200

100

= 25°C

= 150°C

Gate-to-Emitter Voltage (V)

(V)

GE,

Fig 5. Typical Transfer Characteristics

Fig 6. V_CE(ON)vs. Gate Voltage

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IRGI4085PbF

220

200

180

160

140

120

100

ton= 2µs

Duty cycle <= 0.10

Half Sine Wave

100

125

150

100

125

150

Case Temperature (°C)

, Case Temperature (°C)

Fig 8. Typical Repetitive Peak Current vs. Case Temperature

1000

Fig 7. Maximum Collector Current vs. Case Temperature

1000

= 240V

L = 220nH

C = variable

L = 220nH

C = variable

900

800

700

600

500

400

900

800

700

600

500

400

100°C

25°C

170 180 190 200 210 220 230 240

, Peak Collector Current (A)

170 180 190 200 210 220 230 240

I , Peak Collector Current (A)

Fig 9. Typical E_PULSEvs. Collector Current

Fig 10. Typical E_PULSEvs. Collector-to-Emitter Voltage

1400

1000

= 240V

L = 220nH

t = 1µs half sine

1200

1000

800

C= 0.4µF

100

10µsec

1msec

100µsec

C= 0.3µF

C= 0.2µF

600

Tc = 25°C

Tj = 150°C

Single Pulse

400

200

0.1

100

125

150

100

1000

T , Temperature (ºC)

(V)

Fig 11. E_PULSEvs. Temperature

Fig 12. Forrward Bias Safe Operating Area

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IRGI4085PbF

100000

10000

1000

100

= 0V,

= C

f = 1 MHZ

+ C , C

= 25A

SHORTED

ies

res

oes

= C

= 240V

= 150V

= 60V

CES

= C + C

CES

Cies

Coes

Cres

100

150

200

, Total Gate Charge (nC)

, Collector-toEmitter-Voltage(V)

Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage

D = 0.50

0.20

0.10

0.05

R₁

R₂

R₃

R₄

Ri (°C/W) τi (sec)

0.1

0.01

0.14521 0.000104

0.02

0.01

^Jτ_J

^Cτ

0.39603 0.002547

1.23063 0.171095

¹τ₁

Ci= τi/Ri

²τ₂

³τ₃

⁴τ₄

1.51959

2.615

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

, Rectangular Pulse Duration (sec)

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRGI4085PbF

PULSEA

PULSEB

DRIVER

VCC

Ipulse

DUT

t_ST

Fig 16a. t_stand E_PULSETest Circuit

Fig 16b. t_stTest Waveforms

V_CE

Energy

I_CCurrent

VCC

DUT

Fig 16c. E_PULSETest Waveforms

Fig. 17 - Gate Charge Circuit (turn-off)

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IRGI4085PbF

TO-220 Full-Pak Package Outline

Dimensions are shown in millimeters (inches)

TO-220 Full-Pak Part Marking Information

TO-220AB Full-Pak package is not recommended for Surface Mount Application.

The specifications set forth in this data sheet are the sole and

exclusive specifications applicable to the identified product,

and no specifications or features are implied whether by

industry custom, sampling or otherwise. We qualify our

products in accordance with our internal practices and

procedures, which by their nature do not include qualification to

all possible or even all widely used applications. Without

limitation, we have not qualified our product for medical use or

applications involving hi-reliability applications. Customers are

encouraged to and responsible for qualifying product to their

own use and their own application environments, especially

where particular features are critical to operational performance

or safety. Please contact your IR representative if you have

specific design or use requirements or for further information.

Data and specifications subject to change without notice.

This product has been designed for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.05/07

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