IRGIB7B60KDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGIB7B60KDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总12页 (文件大小：903K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95195
IRGIB7B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
IC = 8.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
G
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• Lead-Free
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB
FullPak
Absolute Maximum Ratings
Parameter
Max.
600
12
Units
V
Collector-to-Emitter Voltage
VCES
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
IC @ TC = 25°C
8.0
A
IC @ TC = 100°C
24
ICM
Clamped Inductive Load current
24
ILM
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
9.0
IF @ TC = 25°C
6.0
IF @ TC = 100°C
18
IFM
RMS Isolation Voltage, Terminal to Case, t=1 min.
Gate-to-Emitter Voltage
2500
±20
39
V
VISOL
VGE
Maximum Power Dissipation
W
PD @ TC = 25°C
Maximum Power Dissipation
20
PD @ TC = 100°C
Operating Junction and
-55 to +175
TJ
Storage Temperature Range
°C
TSTG
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
3.8
Units
Junction-to-Case- IGBT
Rθ
Rθ
Rθ
Rθ
JC
JC
CS
JA
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
6.0
°C/W
–––
62
–––
g
Wt
www.irf.com
1
04/27/04
IRGIB7B60KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
VGE = 0V, IC = 500µA
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
3.5
—
—
—
—
—
—
—
—
—
—
0.57
1.8
2.2
2.3
4.5
-9.5
3.7
1.0
200
—
V
∆
V
∆
(BR)CES/ TJ
VCE(on)
VGE(th)
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 8.0A, VGE = 15V, TJ = 25°C
IC = 8.0A, VGE = 15V, TJ = 150°C
IC = 8.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 250µA
Temperature Coeff. of Breakdown Voltage
—
V/°C
2.2
2.5
2.5
5.5
—
5,6,7
Collector-to-Emitter Voltage
V
9,10,11
Gate Threshold Voltage
V
mV/°C
S
9,10,11
12
∆
∆
VGE(th)/ TJ
VCE = VGE, IC = 1mA (25°C-150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
VCE = 50V, IC = 8.0A, PW = 80µs
VGE = 0V, VCE = 600V
gfe
—
150
500
ICES
VFM
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 5.0A, VGE = 0V
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
µA
V
720 1100
1.25 1.45
1.20 1.40
1.20 1.30
8
IF = 5.0A, TJ = 150°C, VGE = 0V
IF = 5.0A, TJ = 175°C, VGE = 0V
VGE = ±20V, VCE = 0V
IGES
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
23
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Qg
IC = 8.0A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
29
3.7
14
44
5.6
21
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
VCC = 400V
VGE = 15V
CT1
nC
µJ
ns
IC = 8.0A, VCC = 400V
CT4
CT4
160
160
320
23
268
268
433
27
VGE = 15V, RG = 50Ω, L = 1.1mH
TJ = 25°C
IC = 8.0A, VCC = 400V
Ω
VGE = 15V, RG = 50 , L = 1.1mH
Rise time
22
26
td(off)
tf
TJ = 25°C
Turn-Off delay time
140
32
150
42
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 8.0A, VCC = 400V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
220
270
490
22
330
381
711
27
CT4
13,15
WF1,WF2
14,16
CT4
Ω
VGE = 15V, RG = 50 , L = 1.1mH
µJ
ns
TJ = 150°C
IC = 8.0A, VCC = 400V
VGE = 15V, RG = 50Ω, L = 1.1mH
TJ = 150°C
Rise time
21
25
td(off)
tf
WF1
Turn-Off delay time
180
40
198
56
Fall time
WF2
LE
Internal Emitter Inductance
Input Capacitance
7.5
440
38
—
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
RBSOA
660
57
VCC = 30V
22
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
pF
16
24
f = 1.0MHz
TJ = 150°C, IC = 54A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 50Ω
4
CT2
FULL SQUARE
Ω
TJ = 150°C, Vp = 600V, RG = 100
VCC=360V,VGE = +15V to 0V
CT3
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
WF4
ISC (Peak)
WF4
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
—
—
70
100
95
—
A
µJ
ns
A
Erec
TJ = 150°C
133
120
17
17,18,19
20,21
CT4,WF3
trr
VCC = 400V, IF = 8.0A, L = 1.07mH
Irr
VGE = 15V, RG = 50Ω
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
13
Qrr
620
800
nC di/dt = 500A/µS
Note to
are on page 12
2
www.irf.com
IRGIB7B60KDPbF
14
12
10
8
50
40
30
20
10
0
6
4
2
0
0
20 40 60 80 100 120 140 160 180
(°C)
C
0
20 40 60 80 100 120 140 160 180
(°C)
C
T
T
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
100 µs
10
1ms
1
10ms
0.1
DC
0
0.01
10
100
1000
1
10
100
(V)
CE
1000
10000
V
V
(V)
CE
Fig. 4 - Reverse Bias SOA
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
TJ = 150°C; VGE =15V
www.irf.com
3
IRGIB7B60KDPbF
40
40
35
30
25
20
15
10
5
V
= 18V
GE
35
30
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
CE
(V)
V
CE
(V)
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
30
40
35
30
-40°C
25
20
15
10
5
25°C
150°C
V
= 18V
GE
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0.0
0.5
1.0
(V)
F
1.5
2.0
0
1
2
3
4
5
6
V
V
(V)
CE
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 80µs
TJ = 150°C; tp = 80µs
4
www.irf.com
IRGIB7B60KDPbF
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
GE
(V)
V
GE
(V)
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
20
18
16
14
12
10
8
100
80
60
40
20
0
T
= 25°C
J
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
T
= 150°C
J
6
T
= 150°C
J
4
T
J
= 25°C
2
0
5
10
15
20
0
5
10
15
20
V
(V)
V
GE
(V)
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
TJ = 150°C
VCE = 360V; tp = 10µs
www.irf.com
5
IRGIB7B60KDPbF
600
500
1000
100
10
td
OFF
400
E
OFF
300
200
100
0
t
F
E
ON
td
ON
t
R
0
5
10
(A)
15
20
0
5
10
(A)
15
20
I
C
I
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.1mH; VCE= 400V,
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.1mH; VCE= 400V
RG= 50Ω; VGE= 15V
RG= 50Ω; VGE= 15V
700
600
500
400
300
200
100
0
10000
E
ON
E
OFF
1000
100
10
td
OFF
td
ON
t
F
t
R
0
100
200
300
)
400
500
0
100
200
300
)
400
500
R
(
R
(
Ω
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
6
www.irf.com
IRGIB7B60KDPbF
16
14
12
10
8
20
18
16
14
12
10
8
R
50 Ω
G =
R
150
Ω
G =
R
270
Ω
G =
6
6
R
470
Ω
4
G =
4
2
2
0
0
0
5
10
(A)
15
20
0
100
200
300
400
500
I
R
(
Ω)
F
G
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C; IF = 8.0A
TJ = 150°C
16
14
12
10
8
1500
50Ω
16A
150Ω
1000
500
0
270Ω
470
Ω
8.0A
6
4.0A
4
2
0
0
100 200 300 400 500 600 700
0
100
200
300
400
500
600
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
IF= 8.0A; TJ = 150°C
www.irf.com
7
IRGIB7B60KDPbF
250
200
150
100
50
470Ω
270Ω
150 Ω
50
Ω
0
0
5
10
(A)
15
20
I
F
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
1000
100
10
16
14
12
10
8
Cies
300V
Coes
Cres
400V
6
4
2
1
0
0
20
40
60
(V)
80
100
0
5
10
15
20
25
30
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22- Typ. Capacitance vs. VCE
ICE = 8.0A; L = 600µH
VGE= 0V; f = 1MHz
8
www.irf.com
IRGIB7B60KDPbF
10
D = 0.50
1
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.05
0.367
0.425
1.070
1.928
0.000164
0.000652
0.081521
2.124500
τJ
τ
0.1
0.01
0.02
Cτ
τJ
τ
τ
1τ1
Ci= τi/Ri
τ
τ
2 τ2
3τ3
4τ4
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
1E+1
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
0.20
0.10
0.05
1
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
0.02
0.01
2.530
1.354
2.114
0.001
Cτ
0.1
τ
1τ1
τ3
2 τ2
0.068689
2.758
τ3
τ /
Ci= i Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
1
, Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com
9
IRGIB7B60KDPbF
10
www.irf.com
IRGIB7B60KDPbF
600
500
400
300
200
100
0
12
10
8
600
500
400
300
200
100
0
24
20
16
12
8
tf
Vce
tr
Vce
Ic e
90% Ice
5% Vce
90% Ice
10% Ice
6
4
5% Ice
Ice
2
4
5% Vce
0
Eoff Loss
0
-100
-200
-2
-4
Eon
Loss
-100
-4
0.3
0.5
0.7
Time (uS)
0.9
0
0.2
0.4
0.6
0.8
1
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
100
0
15
400
350
300
250
200
150
100
50
80
60
40
20
0
QRR
10
5
tRR
-100
-200
-300
-400
-500
-600
0
10%
Peak
IRR
-5
Peak
IRR
-10
-15
-20
0
0.00
10.00
20.00
30.00
40.00
50.00
-0.15
-0.05
0.05
0.15
0.25
Time (uS)
time (µS)
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
www.irf.com
11
IRGIB7B60KDPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
EXAMPLE: THIS IS AN IRFI840G
WITH ASSEMBLY
PART NUMBER
LOT CODE 3432
AS SEMBLED ON WW 24 1999
IN THE ASSEMBLY LINE "K"
INTERNATIONAL
RECTIFIER
LOGO
IRFI840G
924K
34
32
DATE CODE
YEAR 9 = 1999
WEE K 24
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB L Y
LOT CODE
LINE K
Notes:
VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 50Ω.
Energy losses include "tail" and diode reverse recovery.
TO-220AB FullPak package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/04
12
www.irf.com
相关型号：
IRGIH50FDPBF
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-259AA
INFINEON
IRGIH50FUPBF
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-259AA
INFINEON
IRGKA035U06
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7
INFINEON
IRGKA050F06
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7
INFINEON
IRGKA090U06
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7
INFINEON
IRGKA120F06
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7
INFINEON
IRGKI0025M12
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7
INFINEON
IRGKI0050M12
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7
INFINEON
IRGKI0050M12PBF
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7
INFINEON
©2020 ICPDF网 联系我们和版权申明