IRGP4085DPBF [INFINEON]
PDP TRENCH IGBT; PDP TRENCH IGBT
| 型号： | IRGP4085DPBF |
| 厂家： | 
Infineon |
| 描述： | PDP TRENCH IGBT |
| 文件： | 总7页 (文件大小：667K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97286
IRGP4085DPbF
PDP TRENCH IGBT
Key Parameters
Features
VCE min
330
1.69
250
150
V
V
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
VCE(ON) typ. @ IC = 70A
IRP max @ TC= 25°C c
TJ max
A
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for Improved Panel Efficiency
)
°C
l
l
High Repetitive Peak Current Capability
Lead Free Package
C
C
E
G
C
G
E
TO-247AC
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on) andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
A
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current c
Power Dissipation
70
40
250
160
W
63
Power Dissipation
1.3
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Thermal Resistance
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount) d
Weight
Typ.
–––
Max.
0.80
Units
RθJC (IGBT)
RθJC (Diode)
RθCS
d
d
1.6
2.4
0.24
–––
40
°C/W
g (oz)
RθJA
–––
6.0 (0.21)
–––
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1
06/05/07
IRGP4085DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 1 mA
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 25A
VGE = 15V, ICE = 40A
VGE = 15V, ICE = 70A
GE = 15V, ICE = 120A
VGE = 15V, ICE = 70A, TJ = 150°C
CE = VGE, ICE = 500µA
CE = 330V, VGE = 0V
VCE = 330V, VGE = 0V, TJ = 100°C
CE = 330V, VGE = 0V, TJ = 150°C
VGE = 30V
Parameter
Collector-to-Emitter Breakdown Voltage
∆ΒVCES/∆TJ Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
BVCES
330
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
—
–––
0.34
1.18
1.36
1.69
2.26
1.93
–––
-11
2.0
–––
–––
1.48
1.68
2.09
2.76
–––
5.0
–––
25
–––
–––
100
-100
–––
–––
–––
—
V
V/°C
VCE(on)
Static Collector-to-Emitter Voltage
V
V
V
V
VGE(th)
∆VGE(th)/∆TJ
ICES
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
V
mV/°C
µA
5.0
V
100
–––
–––
50
85
31
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
nA
V
V
V
GE = -30V
CE = 25V, ICE = 25A
CE = 200V, IC = 25A, VGE = 15V
gfe
Qg
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
S
nC
47
IC = 25A, VCC = 196V
RG = 10Ω, L=200µH, LS= 200nH
TJ = 25°C
—
—
—
—
37
176
99
45
38
—
—
—
—
ns
ns
IC = 25A, VCC = 196V
RG = 10Ω, L=200µH, LS= 200nH
TJ = 150°C
—
—
Turn-Off delay time
Fall time
—
—
228
183
–––
—
—
tst
VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
Shoot Through Blocking Time
100
–––
ns
µJ
–––
–––
834
985
–––
–––
EPULSE
Energy per Pulse
Ciss
Coss
Crss
LC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
–––
–––
–––
–––
2297
141
74
–––
–––
–––
–––
V
CE = 30V
pF
ƒ = 1.0MHz,
See Fig.13
5.0
Between lead,
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
13
–––
and center of die contact
Diode Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
Parameter
Average Forward Current at
TC=155°C
Min. Typ. Max. Units
IF(AV)
–––
–––
8.0
A
IFSM
VF
TJ = 155°C, PW = 6.0ms half sine wave
IF = 8A
IF = 8A, TJ = 150°C
IF = 1A, di/dt = -50A/µs, VR =30V
TJ = 25°C
Non Repetitive Peak Surge Current
Forward Voltage
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.19
0.94
35
43
67
100
1.3
1.0
A
V
trr
Reverse Recovery Time
60
ns
–––
–––
–––
–––
–––
–––
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 8A
Qrr
Irr
Reverse Recovery Charge
Peak Recovery Current
60
nC
A
di/dt = 200A/µs
VR = 200V
210
2.8
6.3
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Half sine wave with duty cycle = 0.1, ton=2µsec.
R is measured at TJ of approximately 90°C.
θ
2
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IRGP4085DPbF
200
160
120
80
200
160
120
80
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
40
40
0
0
0
4
8
12
16
0
4
8
12
16
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
200
200
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
160
120
80
40
0
160
120
80
40
0
0
4
8
12
16
0
4
8
12
16
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
300
250
200
150
14
I
= 25A
C
12
10
8
T
T
= 25°C
J
J
= 150°C
6
100
50
0
T
T
= 25°C
J
J
4
= 150°C
2
0
2
4
6
8
10
12
14
16
0
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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3
IRGP4085DPbF
80
70
60
50
40
30
20
10
0
300
200
100
0
ton= 2µs
Duty cycle = 0.1
Half Sine Wave
25
50
75
100
125
150
0
25
50
75
100
125
150
Case Temperature (°C)
T
, Case Temperature (°C)
C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
1000
1000
V
= 240V
L = 220nH
C = 0.4µF
CC
L = 220nH
C = variable
900
800
700
600
500
400
900
100°C
100°C
800
700
600
500
400
25°C
25°C
170 180 190 200 210 220 230 240
180
190
CE,
200
210
220
230
240
I , Peak Collector Current (A)
C
V
Collector-to-Emitter Voltage (V)
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
1400
1000
V
= 240V
CC
L = 220nH
t = 1µs half sine
1200
1000
800
C= 0.4µF
C= 0.3µF
C= 0.2µF
10 µs
100 µs
100
1ms
10
600
400
1
200
1
10
100
1000
25
50
75
100
125
150
V
(V)
CE
T , Temperature (ºC)
J
Fig 11. EPULSE vs. Temperature
Fig 12. Forward Bias Safe Operating Area
4
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IRGP4085DPbF
10000
1000
100
25
20
15
10
5
I = 25A
D
V
= 240V
DS
VDS= 200V
VDS= 150V
Cies
Coes
Cres
0
10
0
20
40
60
80
100
120
0
100
200
300
Q
Total Gate Charge (nC)
G
V
(V)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
1
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
D = 0.50
0.20
0.1
0.10
R1
R1
R2
R2
R3
R3
0.05
Ri (°C/W) τi (sec)
τ
JτJ
τ
τ
Cτ
0.146
0.382
0.271
0.000131
0.001707
0.014532
0.02
τ
1τ1
τ
2 τ2
3τ3
0.01
0.01
Ci= τi/Ri
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τι (sec)
0.07854 0.000637
0.829201 0.000532
1.002895 0.003412
0.490875 0.055432
0.05
0.02
0.01
0.1
τJ
τC
τJ
τ1
τ
τ
τ
3τ3
τ4
2 τ2
τ1
τ4
Ci= τi/Ri
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case (DIODE)
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5
IRGP4085DPbF
90
80
70
60
50
40
30
20
100
10
1
I
= 8.0A, T =125°C
F
J
Tj = 150°C
Tj = 25°C
I
= 8.0A, T =25°C
F
J
0.1
0.0
0.5
1.0
1.5
2.0
2.5
100
1000
V
, Forward Voltage Drop (V)
FM
di / dt - (A / µs)
f
Fig.18-TypicalReverseRecovery vs.di F /dt
Fig.17-Typical Forward Voltage Drop Characteristics
400
300
200
100
0
I = 8.0A, T =125°C
F J
Fig.20 - Switching Loss Circuit
A
I
= 8.0A, T =25°C
J
RG
C
F
DRIVER
L
100
1000
VCC
di / dt - (A / µs)
f
B
Ipulse
Fig.19-TypicalStoredCharge vs.diF /dt
RG
DUT
VCE
Energy
IC Current
Fig 21a. tst and EPULSE Test Circuit
Fig 21b. tst Test Waveforms
PULSE A
L
VCC
DUT
0
PULSE B
1K
tST
Fig. 22 - Gate Charge Circuit (turn-off)
Fig 21c. EPULSE Test Waveforms
6
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IRGP4085DPbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
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TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkigbt.html
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
procedures, which by their nature do not include qualification to
all possible or even all widely used applications. Without
limitation, we have not qualified our product for medical use or
applications involving hi-reliability applications. Customers are
encouraged to and responsible for qualifying product to their
own use and their own application environments, especially
where particular features are critical to operational
performance or safety. Please contact your IR representative if
you have specific design or use requirements or for further
information.
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/07
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