IRGPC20F [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A); 绝缘栅双极晶体管（ VCES = 600V ， VGE @ = 15V ， IC = 9.0A ）
| 型号： | IRGPC20F |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A) |
| 文件： | 总6页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.1022
IRGPC20F
INSULATED GATE BIPOLAR TRANSISTOR
Fast Speed IGBT
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCES = 600V
V
CE(sat) ≤ 2.8V
G
@VGE = 15V, IC = 9.0A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
16
IC @ TC = 100°C
9.0
A
ICM
64
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
64
VGE
±20
V
mJ
W
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
5.0
60
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
2.1
—
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
0.24
—
—
40
—
6 (0.21)
—
g (oz)
Revision 0
C-69
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IRGPC20F
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
600
20
—
—
—
—
—
V
V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.72
2.0
2.6
2.3
—
—
V/°C VGE = 0V, IC = 1.0mA
IC = 9.0A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.8
—
VGE = 15V
—
V
IC = 16A
See Fig. 2, 5
—
—
IC = 9.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.9 5.1
—
S
VCE = 100V, IC = 9.0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
250
1000
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
16
2.4
7.9
24
21
3.4
10
—
IC = 9.0A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
13
—
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
Fall Time
160 270
310 600
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.18
0.90
—
—
mJ
ns
See Fig. 9, 10, 11, 14
1.08 2.0
td(on)
tr
td(off)
tf
25
18
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 10, 14
Turn-Off Delay Time
Fall Time
210
600
1.65
13
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
340
63
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
5.9
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Pulse width 5.0µs,
single shot.
Repetitive rating; pulse width
limited by maximum junction
temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 50Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor
0.1%.
≤
C-70
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IRGPC20F
25
20
F o r bo th:
T ria ng ular w ave :
D uty cycle: 50%
T
T
= 125°C
J
= 90°C
sin k
G ate d rive as specified
P o w e r D issip a tion 1 5 W
C la m p v o lta g e :
80 % o f ra te d
=
15
Square w ave:
60 % of ra ted
vo lta g e
10
5
Ide al diod es
0
0.01
0.1
1
10
100
f, F reque ncy (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=I PK
)
100
10
1
100
T
= 25°C
J
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
10
V
= 15V
V
= 100V
G E
20µs PULSE W IDTH
CC
5µs PULSE W IDTH
0.1
1
0.1
1
10
5
10
15 20
V
, G ate-to-E m itter Voltage (V )
VCE , Collector-to-Emitter Voltage (V)
G E
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-71
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IRGPC20F
16
12
8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
= 15V
V
= 15V
G E
G E
80µs P ULSE W IDTH
I
= 18A
C
I
= 9.0A
= 4.5A
C
C
I
4
0
-60 -40 -20
0
20
40
60
8 0 1 00 120 140 160
25
50
75
100
125
150
T
, Case Temperature (°C)
TC , Case Temperature (°C)
C
Fig.
5
-
Collector-to-Emitter
Fig. 4 - Maximum Collector Current vs.
Voltage vs. Case Temperature
Case Temperature
10
D
=
0 .50
0.20
1
0.1 0
0 .05
P
D M
0.1
0 .02
0.0 1
t
1
S IN G LE PU L SE
t
(T HE R M A L R ES PO N S E)
2
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular Pulse D ura tion (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-72
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IRGPC20F
20
16
12
8
700
V
C
C
C
= 0V,
f = 1MHz
V
I
= 400V
= 9.0A
CE
C
GE
ies
res
oes
= C + C
,
C
SHORTED
ge
gc
ce
= C
gc
600
500
400
300
200
100
0
= C + C
ce
gc
C
ies
C
oes
C
res
4
0
1
10
100
0
4
8
12
16
20
VCE , Collector-to-Emitter Voltage (V)
Q
, Total G ate Charge (nC)
g
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Collector-to-Emitter
Voltage
10
1.36
1.34
1.32
1.30
1.28
1.26
1.24
Ω
= 50
= 15V
= 480V
R
V
V
V
V
T
I
= 480V
= 15V
= 25°C
= 9.0A
G
GE
CC
CC
G E
C
I
I
= 18A
= 9.0A
C
C
C
1
I
= 4.5A
C
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
20
30
40
50
60
T , Case Temperature (°C)
C
R G , Gate Resistance (
Ω )
W
Fig.
9
-
Typical Switching
Fig. 10 - Typical Switching
Losses vs.
Losses vs. Gate Resistance
Case Temperature
C-73
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IRGPC20F
4.0
100
10
1
Ω
= 50
R
T
V
V
V
T
= 20V
= 125°C
G
G E
J
= 150°C
= 480V
= 15V
C
CC
G E
3.0
2.0
1.0
0.0
S AFE OPE RATING A REA
1
10
100
1000
4
8
12
16
20
V
, C olle ctor-to-E m itter V oltage (V )
I
, Collector-to-E mitter Current (A)
C
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13
C-74
To Order
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