IRGPC40KD2-EPBF [INFINEON]
Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AD;
| 型号： | IRGPC40KD2-EPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AD 超快软恢复二极管 快速软恢复二极管 局域网 电动机控制 栅 晶体管 |
| 文件： | 总9页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1114
IRGPC40KD2
INSULATEDGATEBIPOLARTRANSISTOR
WITHULTRAFASTSOFTRECOVERYDIODE
Short Circuit Rated
UltraFastCoPackIGBT
Features
C
VCES =600V
• Short circuit rated -10µs @125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
V
CE(sat) ≤ 3.2V
G
@VGE = 15V, IC = 25A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
T
O -247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Foward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
42
25
84
84
A
IF @ TC = 100°C
15
IFM
tsc
VGE
84
10
± 20
µs
V
PD @ TC = 25°C
Maximum Power Dissipation
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
------
------
------
-----
Typ.
------
------
0.24
Max.
0.77
1.7
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
------
40
-----
------
6 (0.21)
------
g (oz)
IRGPC40KD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage 600 ---- ----
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage---- 0.46 ---- V/°C VGE = 0V, IC = 1.0mA
Min. Typ. Max. Units
Conditions
V(BR)CES
V
VGE = 0V, IC = 250µA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 2.1 3.2
---- 2.8 ----
---- 2.5 ----
3.0 ---- 5.5
IC = 25A
VGE = 15V
V
IC = 42A
See Fig. 2, 5
IC = 25A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
7.0 14
----
S
VCE = 100V, IC = 25A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
---- ---- 250
---- ---- 3500
---- 1.3 1.7
---- 1.2 1.6
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 15A
See Fig. 13
IC = 15A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
---- ---- ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
---- 61
---- 13
---- 22
---- 72
---- 90
92
19
IC = 25A
nC VCC = 400V
See Fig. 8
Qge
Qgc
td(on)
tr
33
----
----
TJ = 25°C
RiseTime
ns
IC = 25A, VCC = 480V
VGE = 15V, RG = 10Ω
td(off)
tf
Turn-Off Delay Time
FallTime
---- 170 250
---- 140 220
---- 1.5 ----
---- 1.5 ----
---- 3.0 4.2
10 ---- ----
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
mJ
µs
tsc
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω, VCPK < 500V
td(on)
tr
td(off)
tf
Turn-On Delay Time
RiseTime
---- 70
---- 86
----
----
TJ = 150°C,
See Fig. 9, 10, 11, 18
ns
IC = 25A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
Turn-Off Delay Time
FallTime
---- 280 ----
---- 270 ----
---- 4.2 ----
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
---- 13
----
Cies
Coes
Cres
trr
---- 1500 ----
---- 190 ----
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
---- 17
---- 42
----
60
ƒ = 1.0MHz
TJ = 25°C See Fig.
---- 74 120
Diode Peak Reverse Recovery Current ---- 4.0 6.0
---- 6.5 10
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
TJ = 125°C 16
14
IF = 15A
Irr
VR = 200V
Qrr
Diode Reverse Recovery Charge
---- 80 180
---- 220 600
di/dt = 200A/
188
µs
di(rec)M/dtDiode Peak Rate of Fall of Recovery ----
TJ = 25°C See Fig. During tb ----
----
A/µs
160
N--o--tes:
TJ = 125°C
17
Pulse width 5.0µs,
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω, ( See fig. 19 )
single shot.
Repetitive rating; VGE=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
IRGPC40KD2
25
20
15
10
5
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 35W
60% of rated
voltage
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
1000
100
T = 150°C
J
T = 150°C
J
T = 25°C
J
10
T = 25°C
J
V
= 15V
V
= 100V
CC
GE
20µs PULSE WIDTH
5µs PULSE WIDTH
A
A
0.1
1
0.1
1
10
5
10
15
20
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRGPC40KD2
50
40
30
20
10
0
5.0
4.0
3.0
2.0
1.0
V
GE
= 15V
V
= 15V
GE
80µs PULSE WIDTH
I
= 50A
C
I
I
= 25A
= 13A
C
C
A
A
25
50
75
100
125
150
-60 -40 -20
0
20
40
60
80 100 120 140 160
T , Case Temperature (°C)
T , Case Temperature (°C)
C
C
Fig. 4 - Maximum Collector Current vs.
Fig. 5 - Collector-to-Emitter Voltage vs.
CaseTemperature
CaseTemperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
t
SINGLE PULSE
(THERMAL RESPONSE)
2
0.02
0.01
Notes:
1. Duty factor D = t / t
1
2
thJC
1
2. Peak T = P
J
x Z
+ T
C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular Pulse Duration (sec)
1
Fig. 6-MaximumIGBTEffectiveTransientThermalImpedance,Junction-to-Case
IRGPC40KD2
20
16
12
8
2500
2000
1500
1000
500
V
= 400V
= 25A
V
C
C
C
= 0V,
f = 1MHz
CE
GE
ies
= C + C
,
C
SHORTED
I
C
ge
gc
gc
ce
= C
res
oes
= C + C
ce
gc
C
ies
C
oes
4
C
res
A
A
0
0
1
10
100
0
20
40
60
80
V , Collector-to-Emitter Voltage (V)
CE
Q , Total Gate Charge (nC)
g
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
3.20
3.15
3.10
3.05
3.00
2.95
2.90
100
10
1
V
= 480V
= 15V
= 25°C
= 25A
R
V
V
= 10Ω
= 15V
= 480V
CC
G
V
T
GE
C
GE
CC
I
C
I
= 50A
C
I
I
= 25A
= 13A
C
C
A
A
0.1
0
10
20
30
40
50
60
-60 -40 -20
0
20
40
60
80 100 120 140 160
T , Case Temperature (°C)
Ω
R , Gate Resistance ( )
G
C
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
CaseTemperature
IRGPC40KD2
12
1000
100
10
R
= 10Ω
V
GE
= 20V
G
T
V
V
= 150°C
= 480V
= 15V
T
= 125°C
C
J
CC
GE
9
6
3
0
SAFE OPERATING AREA
A
A
1
0
10
20
30
40
50
60
1
10
100
1000
I , Collector-to-Emitter Current (A)
V
CE
, Collector-to-Emitter Voltage (V)
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-EmitterCurrent
100
10
T = 150°C
J
T = 125°C
J
T = 25°C
J
1
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRGPC40KD2
100
10
1
100
80
60
40
20
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 30A
F
I
= 30A
F
I
= 15A
F
I
= 15A
= 5.0A
F
I
= 5.0A
F
I
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
800
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
600
I
= 30A
F
I
= 5.0A
F
400
200
0
I
= 15A
I = 15A
F
F
I
= 30A
F
I
= 5.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
IRGPC40KD2
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td(off)
tf
t1+5µS
Eoff = Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
td(on)
tr
t2
Eon = Vce ie dt
t1
t4
Erec =
Vd id dt
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
IRGPC40KD2
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
D.U.T.
L
480V
4 X IC @25°C
RL=
1000V V *
c
0 - 480V
50V
6000µF
100V
Fig. 20- Pulsed Collector Current
Fig. 19- Clamped Inductive Load Test
Test Circuit
Circuit
NOTES:
- D -
3.65 (.143)
3.55 (.140)
0.25 (.010)
1 DIMENSIONS& TOLERANCING
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
15.90 (.626)
15.30 (.602)
PER ANSI Y14.5M, 1982.
2 CONTROLLINGDIMENSION : INCH.
3 DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO-247AC.
M
D B M
- B-
- A -
5.50 (.217)
20.30 (.800)
19.70 (.775)
5.50 (.217)
4.50 (.177)
2X
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - COLLECTOR
3 - EMITTER
4 - COLLECTOR
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
*
LONGER LEADED (20mm)
VERSION AVAILABLE (TO-247AD)
*
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
2.60 (.102)
2.20 (.087)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3X
3X
M
S
A
C
5.45 (.215)
3.40 (.133)
3.00 (.118)
2X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)
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