IRGS14C40LTRLP [INFINEON]
IGBT with on-chip Gate-Emitter and Gate-Collector clamps; IGBT具有片上栅极 - 射极和门极 - 集电极夹型号: | IRGS14C40LTRLP |
厂家: | Infineon |
描述: | IGBT with on-chip Gate-Emitter and Gate-Collector clamps |
文件: | 总12页 (文件大小:171K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 93891A
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
TERMINAL DIAGRAM
Collector
Features
BVCES = 370V min, 430V max
IC @ TC = 110°C = 14A
Most Rugged in Industry
Logic-Level Gate Drive
VCE(on) typ= 1ꢀ2V @7A @25°C
IL(min)=11ꢀ5A @25°C,L=4ꢀ7mH
R1
> 6KV ESD Gate Protection
Low Saturation Voltage
Gate
R2
High Self-clamped Inductive Switching Energy
Emitter
Description
JEDEC TO-263AB
JEDEC TO-220AB
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits*
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits*
JEDEC TO-262AA
IRGS14C40L
IRGSL14C40L
IRGB14C40L
NOTE: IRGS14C40L is available in tape and reelꢀ Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, iꢀe, IRGS14C40LTRR or IRGS14C40LTRLꢀ
Absolute Maximum Ratings
Parameter
Max
Clamped
20
Unit
V
Condition
RG = 1K ohm
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
VGE = 5V
VGE = 5V
IC @ TC = 25°C
A
IC @ TC = 110°C Continuous Collector Current
14
A
IG
Continuous Gate Current
Peak Gate Current
1
mA
mA
V
tPK = 1ms, f = 100Hz
IGp
VGE
10
Gate-to-Emitter Voltage
Clamped
125
PD @ TC = 25°C Maximum Power Dissipation
PD @ T = 110°C Maximum Power Dissipation
W
54
W
TJ
Operating Junction and
- 40 to 175 °C
- 40 to 175 °C
TSTG
VESD
IL
Storage Temperature Range
Electrostatic Voltage
6
KV C = 100pF, R = 1.5K
ohm
Self-clamped Inductive Switching Current
11.5
A
L = 4.7mH, T = 25°C
Thermal Resistance
Parameter
Min
Typ
Max
1.2
40
Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(PCB Mounted, Steady State)
Rθ
Rθ
JC
JA
°C/W
Transient Thermal Impedance, Juction-to-Case (Fig.11)
Zθ
JC
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Page 1
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
(unless otherwise specified)
Off-State Electrical Charasteristics @ TJ = 25°C
Parameter
Min Typ Max Unit
Conditions
R G = 1K ohm, I C=7A, VGE = 0V
I G=2m A
Fig
Collector-to-Emitter Breakdown Voltage
Gate-to-Emitter Breakdown Voltage
Collector-to-Emitter Leakage Current
370 400 430
V
V
BVCES
BVGES
I CES
10
12
15
µA R G=1K ohm, VCE = 250V
100
µA R G=1K ohm, VCE = 250V, TJ =150°C
BVCER Emitter-to-Collector Breakdown Voltage
24
10
28
75
20
V
I C = -10m A
ohm
R 1
R 2
Gate Series Resistance
Gate-to-Emitter Resistance
30 K ohm
(unless otherwise specified)
On-State Electrical Charasteristics @ TJ = 25°C
Parameter
Min Typ Max Unit
Conditions
Fig
1.2 1.40
1.35 1.55
1.35 1.55
1.5 1.7
1.55 1.75
1.6 1.8
I C = 7A, VGE = 4.5V
Collector-to-Emitter Saturation
Voltage
VCE(on)
V
I C = 10A, VGE = 4.5V
1
2
4
I C = 10A, VGE = 4.5V, TC= -40oC
I C = 14A, VGE = 5.0V, TC= -40oC
I C = 14A, VGE = 5.0V
I
C = 14A, VGE = 5.0V, TC=150oC
VGE(th) Gate Threshold Voltage
1.3 1.8 2.2
V
VCE = VGE, I C = 1 m A, TC=25oC
3, 5
8
V
V
CE = VGE, I C = 1 m A, TC=150oC
CE = 25V, I C = 10A, TC=25oC
0.75
10
1.8
19
gfs
Transconductance
15
S
A
I C
Collector Current
20
VCE = 10V, VGE = 4.5V
(unless otherwise specified)
Switching Characteristics @ TJ = 25°C
Parameter
Min Typ Max Unit
Conditions
Fig
7
Q g
Total Gate charge
27
I C = 10A, VCE=12V, VGE=5V
Q ge
Q gc
Gate - Emitter Charge
Gate - Collector Charge
Turn - on delay time
2.5
10
nC I C = 10A, VCE=12V, VGE=5V
15
I
C = 10A, VCE=12V, VGE=5V
0.6 0.9 1.35
t d(on)
VGE=5V, RG=1K ohm, L=1mH, VCE=14V
12
14
Rise time
1.6 2.8
4
t r
µs VGE=5V, RG=1K ohm, L=1mH, VCE=14V
VGE=5V, RG=1K ohm, L=1mH, VCE=300V
Turn - off delay time
3.7
6
8.3
t d(off)
C ies
Input Capacitance
550 825
100 150
VGE=0V, VCE=25V, f=1M H z
C oes
C res
Output Capacitance
pF VGE=0V, VCE=25V, f=1M H z
6
VGE=0V, VCE=25V, f=1M H z
Reverse Transfer Capacitance
12
18
25
15.5
11.5
16.5
7.5
L=0.7m H, TC=25°C
L=2.2m H, TC=25°C
L=4.7m H, TC=25°C
L=1.5m H, TC=150°C
I L
Self-Clamped
A
9
Inductive Switching Current
10
13
14
L=4.7m H, TC=150°C
L=8.7m H, TC=150°C
6
TJ =150oC,
t SC
Short Circuit Withstand Time
120
µs VCC = 16V, L = 10µH
R G = 1K ohm, VGE = 5V
14
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Page 2
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Fig.1 - Typ. Output Characteristics
Fig.2 - Typ. Output Characteristics
TJ=25°C
TJ=125°C
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VGE = 10 V
VGE = 10 V
VGE = 5.0V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
V
V
GE = 4.5V
GE = 4.0V
VGE = 3.7V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE (V)
VCE (V)
Fig.3 - Transfer Characteristics
CE=20V; tp=20µs
Fig.4 - Typical VCE vs TJ
VGE=4.5V
V
100
90
80
70
60
50
40
30
20
10
0
1.6
TJ = 25°C
TJ = 125°C
1.5
1.4
1.3
1.2
1.1
1.0
IC = 10A
IC = 7A
150
-50
0
50
100
200
0
2
4
6
8
10
TJ (°C)
VGE (V)
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4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Fig.6 - Typ. Capacitance vs VCE
VGE=0V; VCE=25V; f=1MHz
Fig.5 - Typical VGE(th) vs TJ
IC=1mA
1000
2.2
2.0
1.8
1.6
1.4
1.2
1.0
C ies
100
10
1
C oes
C res
-50
0
50
100 150
200
1
10
100
TJ (°C)
VCE (V)
Fig.7 - Typ. Gate Charge vs VGE
IC=10A; VCE=12V; VGE=5V
Fig.8 - Typical VCE vs VGE
20
18
16
14
12
10
8
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
IC= 7A; 125°C
IC = 7A; 25°C
IC=10A; 125°C
IC=10A; 25°C
6
4
2
0
0
5
10
15
20
25
30
2.5
3
3.5
4
4.5
V
GE (V)
QG, Total Gate Charge (nC)
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4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Fig.9 - Self-clamp Avalance Current vs
Fig.10 - Self-clamp Avalance Current
Inductance @ 25°C
vs Inductance @ 150°C
40
20
18
16
14
12
10
8
35
30
25
20
15
10
Typical
Typical
Minimum
Minimum
1
6
4
0
2
3
4
5
0
2
4
6
8
10
Inductance (mH)
Inductance (mH)
Fig*11 - Transient Thermal Impedance, Junction-to-Case
10
1
D = 0.50
0.20
P
2
DM
0.10
0.05
0.1
t
1
t
2
0.02
0.01
Notes:
1. Duty factor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
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4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Fig.12 - Switching Waveform for Time Measurement
VGE= 5V; R = 1K ; L= 1mH; VCE= 14V; used circuit in Fig.14
Ω
G
450
400
350
300
250
200
150
100
50
8
VClamp
7
6
5
Vcl (measured)
4
3
VGE
2
1
t d (o f f )
0
0
-1
-2
t r
-2
-50
-14
-10
-6
2
6
10
14
t (µs)
Fig.13 - Self-clamped Inductive Switching Waveform
L=4.7mH; TC=25°C; used circuit in Fig.14
12
10
8
500
400
300
200
100
0
V clamp
I CE
6
4
2
0
-100
-2.E-05 -1.E-05 0.E+00 1.E-05
2.E-05
time
3.E-05
4.E-05
5.E-05
6.E-05
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Page 6
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Figꢀ14 - Test Circuit
0.47 Ω
L
1KΩ
D.U.T.
Ice
Figꢀ15 - Gate Charge Circuit
L
VCC
DUT
0
1K
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Page 7
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
TO-263AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
4.69 (.185)
4.20 (.165)
1.40 (.055)
MAX.
- A -
2
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
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4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
TO-263AB Package Outline in Tape and Reel
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
3.90 (.153)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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Page 9
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
TO-262AA Package Outline
Dimensions are shown in millimeters (inches)
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Page 10
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
3X
3X
0.46 (.018)
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
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Page 11
4/7/2000
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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