IRGS15B60KTRRPBF [INFINEON]
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3;
| 型号： | IRGS15B60KTRRPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 电动机控制 栅 晶体管 |
| 文件： | 总11页 (文件大小：259K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96358
IRGS15B60KPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
VCES = 600V
• Low VCE (on) Non Punch Through IGBT
Technology.
IC = 15A, TC=100°C
• 10µs Short Circuit Capability.
• Square RBSOA.
G
tsc > 10µs, TJ=150°C
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
E
n-channel
VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
IRGS15B60KPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
31
IC @ TC = 100°C
Continuous Collector Current
15
A
ICM
Pulse Collector Current Vge = 15V
Clamped Inductive Load Current Vge = 20V
62
62
ILM
VGE
V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
±20
PD @ TC = 25°C
208
W
PD @ TC = 100°C
83
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Rθ (IGBT)
Junction-to-Case-IGBT
–––
–––
–––
–––
–––
0.5
0.6
–––
40
JC
°C/W
Rθ
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (PCB Mount steady state)
Weight
CS
Rθ
–––
1.44
JA
–––
g (oz)
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1
02/22/11
IRGS15B60KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
VGE = 0V, IC = 500µA
Collector-to-Emitter Breakdown Voltage
600
—
0.3
1.8
2.05
2.1
4.5
-10
10.6
5.0
500
—
—
V
∆V(BR)CES/∆TJ
VGE = 0V, IC = 1.0mA (25°C-150°C)
IC = 15A, VGE = 15V, TJ = 25°C
IC = 15A, VGE = 15V, TJ = 125°C
IC = 15A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 250µA
Temperature Coeff. of Breakdown Voltage
—
—
V/°C
1.5
—
2.2
2.5
2.6
5.5
—
5,6,7
VCE(on)
8,9,10
Collector-to-Emitter Saturation Voltage
V
—
VGE(th)
Gate Threshold Voltage
3.5
—
V
mV/°C
S
8,9
∆
∆
V
GE(th)/ TJ
V
V
CE = VGE, IC =1.0mA (25°C - 150°C)
CE = 50V, IC = 20A, PW = 80µs
10,11
Threshold Voltage temp. coefficient
Forward Transconductance
gfe
—
—
ICES
VGE = 0V, VCE = 600V, TJ = 25°C
GE = 0V, VCE = 600V, TJ = 150°C
Collector-to-Emitter Leakage Current
—
150
1000
±100
µA
nA
V
—
IGES
VGE = ± 20V
Gate-to-Emitter Leakage Current
—
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
CT1
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
IC = 15A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
56
7.0
26
84
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
10
nC
J
V
CC = 400V
IC = 15A, VCC = 400V, VGE = 15V
G = 22Ω, L = 200µH
39
220
340
560
34
330
455
785
44
CT4
R
LS = 150nH TJ = 25°C
IC = 15A, VCC = 400V, VGE = 15V
CT4
R
G = 22Ω, L = 200µH
LS = 150nH TJ = 25°C
16
22
ns
td(off)
tf
Turn-Off delay time
Fall time
184
20
200
26
Eon
Eoff
Etotal
td(on)
tr
IC = 15A, VCC = 400V, VGE = 15V
CT4
12,14
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
355
490
835
34
470
600
1070
44
RG = 22Ω, L = 200µH
LS = 150nH TJ = 150°C
J
WF1, WF2
13, 15
CT4
IC = 15A, VCC = 400V, VGE = 15V
RG = 22Ω, L = 200µH
LS = 150nH TJ = 150°C
18
25
ns
td(off)
tf
Turn-Off delay time
Fall time
203
28
226
36
WF1
WF2
Cies
Coes
Cres
V
V
GE = 0V
Input Capacitance
850
75
—
CC = 30V
pF
µs
Output Capacitance
Reverse Transfer Capacitance
—
35
—
f = 1.0Mhz
C = 62A
I
4
VCC = 500V, Vp =600V
CT2
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
—
Rg = 22Ω, VGE = +20V to 0V, TJ =150°C
CC = 360V, Vp =600V ,TJ = 150°C
V
—
CT3
10
Rg = 22Ω, VGE = +15V to 0V
WF3
Note to are on page 11
2
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IRGS15B60KPbF
35
30
25
20
15
10
5
240
200
160
120
80
40
0
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
T
T
(°C)
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10 µs
10
1
100 µs
1ms
DC
0.1
0
1
10
100
(V)
1000
10000
10
100
(V)
1000
V
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
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3
IRGS15B60KPbF
100
100
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 300µs
TJ = -40°C; tp = 300µs
100
20
90
80
70
60
50
40
30
20
10
0
V
= 18V
18
16
14
12
10
8
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
I
I
I
= 5.0A
= 15A
= 30A
CE
CE
CE
6
4
2
0
0
1
2
3
4
5
6
4
6
8
10 12 14 16 18 20
(V)
V
(V)
V
CE
GE
Fig. 8 - Typical VCE vs. VGE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C
TJ = 150°C; tp = 300µs
4
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IRGS15B60KPbF
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 5.0A
= 15A
= 30A
I
I
I
= 5.0A
= 15A
= 30A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
4
6
8
10 12 14 16 18 20
(V)
4
6
8
10 12 14 16 18 20
(V)
V
V
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
TJ = 150°C
160
140
120
100
80
T
T
= 25°C
J
J
= 150°C
60
40
T
= 150°C
J
20
0
T
= 25°C
J
0
5
10
15
20
V
(V)
GE
Fig. 11 - Typ. Transfer Characteristics
CE = 50V; tp = 10µs
V
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5
IRGS15B60KPbF
1000
100
10
1800
1600
1400
1200
td
OFF
E
OFF
1000
800
600
400
200
0
E
ON
td
ON
t
F
t
R
0
10
20
30
40
50
0
10
20
30
40
50
I
(A)
C
I
(A)
C
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 22Ω; VGE= 15V
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 22Ω; VGE= 15V
1000
900
800
700
600
500
400
300
200
100
0
td
OFF
E
OFF
E
ON
100
td
ON
t
R
t
F
10
0
50
100
150
0
50
100
150
R
( )
Ω
R
( )
Ω
G
G
Fig. 15- Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 600V
ICE= 15A; VGE= 15V
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 15A; VGE= 15V
6
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IRGS15B60KPbF
10000
1000
100
16
14
12
10
8
300V
400V
Cies
6
Coes
Cres
4
2
0
10
0
20
40
60
0
20
40
60
80
100
Q
, Total Gate Charge (nC)
G
V
(V)
CE
Fig. 16- Typ. Capacitance vs. VCE
Fig. 17 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 15A; L = 600µH
1
D = 0.50
0.20
0.1
R1
R1
R2
R2
R3
R3
0.10
0.05
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
Cτ
0.231
0.175
0.201
0.000157
0.000849
0.011943
τ
0.01
0.02
1τ1
τ
2 τ2
3τ3
Ci= τi/Ri
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
t
, Rectangular Pulse Duration (sec)
1
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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7
IRGS15B60KPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
I
CM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
8
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IRGS15B60KPbF
600
500
400
300
200
100
0
30
25
20
15
10
5
500
400
300
200
100
0
50
tF
40
30
90% IC E
90% test current
5% IC E
20
test current
5% V C E
10
10% test current
tR
5% VCE
0
0
Eon Loss
E o ff L o s s
-100
-10
-100
-5
-0.2
-0.1
0.0
0.1
-0.5
0.0
0.5
1.0
1.5
t (µS)
t (µS )
WF.1- Typ. Turn-off Loss
@ TJ = 150°C using CT.4
WF.2- Typ. Turn-on Loss
@ TJ = 150°C using Fig. CT.4
500
400
300
200
100
0
250
V C E
200
150
100
50
IC E
0
-100
-10
-50
30
0
10
t (µS )
20
WF.3- Typ. Short Circuit
@ TJ = 150°C using CT.3
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9
IRGS15B60KPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DAT E CODE
YEAR 0 = 2000
WEE K 02
AS S E MB L Y
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
AS S E MB L Y
LOT CODE
YEAR 0 = 2000
WE EK 02
A= ASSEMBLY SITE CODE
10
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IRGS15B60KPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode HF15D060ACE.
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2011
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11
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