IRGS4615DPBF [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRGS4615DPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总12页 (文件大小：322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGS4615DPbF
IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
C
C
VCES = 600V
IC = 15A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.55V @ 8A
E
E
C
G
G
G
E
D2-Pak
IRGS4615DPbF
TO-220AB
IRGB4615DPbF
n-channel
G
C
E
Gate
Collector
Emitter
Applications
• Appliance Drives
• Inverters
• UPS
→
Features
Benefits
Low VCE(ON) and switching losses
High efficiency in a wide range of applications and switching frequencies
Improved reliability due to rugged hard switching performance and higher
power capability
Square RBSOA and maximum junction temperature 175°C
Positive VCE(ON) temperature coefficient and tighter distribution of
parameters
Excellent current sharing in parallel operation
5μs short circuit SOA
Lead-free, RoHS compliant
Enables short circuit protection scheme
Environmentally friendly
Standard Pack
Form
Tube
Base part number
Package Type
Orderable Part Number
Quantity
50
IRGS4615DPbF
IRGS4615DTRRPbF
IRGS4615DTRLPbF
IRGB4615DPbF
IRGS4615DPbF
IRGS4615DTRRPbF
IRGS4615DTRLPbF
IRGB4615DPbF
D2 PAK
Tape and Reel Right
Tape and Reel Left
Tube
800
800
50
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
600
23
15
24
32
14
9
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
V
IC@ TC = 25°C
IC@ TC = 100°C
ICM
Continuous Collector Current
Pulsed Collector Current, VGE = 15V
ILM
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
A
IF@TC=25°C
IF@TC=100°C
IFM
32
± 20
± 30
99
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
V
VGE
PD @ TC =25°
PD @ TC =100°
TJ
W
50
Maximum Power Dissipation
Operating Junction and
-40 to + 175
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
10lbf. In (1.1 N.m)
Mounting Torque, 6-32 or M3 Screw
TO-220
1
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October 25, 2013
IRGS/B4615DPbF
Thermal Resistance
Parameter
Min.
–––
–––
–––
Typ.
–––
–––
0.5
Max.
1.51
3.66
–––
Units
RθJC
RθJC
RθCS
Thermal Resistance, Junction-to-Case -(each IGBT)
Thermal Resistance, Junction-to-Case -(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
°C/W
Thermal Resistance, Junction-to-Ambient (PCB mount
Thermal Resistance, Junction-to-Ambient ( Socket mount: TO-220)
D2PAK)
–––
–––
40
80
–––
–––
RθJA
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
/ T Temperature Coeff. of Breakdown Voltage
600
—
—
—
0.3
1.55 1.85
—
—
V
V/°C
VGE = 0V, Ic =100 μA
V
GE = 0V, Ic = 250μA ( 25 -175 oC )
V
Δ
(BR)CES Δ
J
IC = 8.0A, VGE = 15V, TJ = 25°C
IC = 8.0A, VGE = 15V, TJ = 150°C
IC = 8.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 250μA
VCE = VGE, IC = 250μA ( 25 -175 oC )
VCE = 50V, IC = 8.0A, PW =80 s
VCE(on)
Collector-to-Emitter Saturation Voltage
—
—
4.0
—
1.95
2.00
—
—
—
6.5
—
V
VGE(th)
V
Gate Threshold Voltage
/ TJ Threshold Voltage temp. coefficient
Forward Transconductance
V
mV/°C
S
-18
5.6
—
Δ
GE(th) Δ
gfe
—
—
—
25
μ
VGE = 0V,VCE = 600V
ICES
μA
Collector-to-Emitter Leakage Current
VGE = 0V, VCE = 600V, TJ =175°C
—
—
—
—
400
1.80
1.30
—
—
2.8
—
IF = 8.0A
IF = 8.0A, TJ = 175°C
VGE = ± 20 V
VFM
IGES
V
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
19
5
8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IC = 8.0A
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
nC VCC = 400V
VGE = 15V
IC = 8.0A, VCC = 400V, VGE = 15V
R = 47 , L=1mH, L = 150nH, T = 25°C
70
145
215
30
μJ
Ω
G
S
J
Energy losses include tail and diode reverse recovery
IC = 8.0A, VCC = 400V
ns
R = 47 , L=1mH, L = 150nH
15
Ω
G
S
td(off)
tf
Turn-Off delay time
Fall time
TJ = 25°C
95
20
165
240
405
28
17
117
35
535
45
15
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
IC = 8.0A, VCC = 400V, VGE = 15V
R = 47 , L=1mH, L = 150nH, T = 175°C
μJ
Ω
G
S
J
Energy losses include tail and diode reverse recovery
IC = 8.0A, VCC = 400V
ns
R = 47 , L=1mH, L = 150nH
Ω
G
S
td(off)
tf
Turn-Off delay time
Fall time
TJ = 175°C
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF VCC = 30V
f = 1Mhz
TJ = 175°C, IC = 32A
VCC = 480V, Vp =600V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
R = 47 , VGE = +20V to 0V
Ω
G
VCC = 400V, Vp =600V
SCSOA
Erec
Short Circuit Safe Operating Area
5
—
—
μs
R = 47 , VGE = +15V to 0V
Ω
G
—
—
TJ = 175oC
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
165
60
14
μJ
ns
A
VCC = 400V, IF = 8.0A
VGE = 15V, Rg = 47 , L=1mH, L =150nH
Ω
S
trr
Irr
—
—
—
—
Notes:
VCC = 80% (VCES), VGE = 20V, L =100 μH, RG = 47Ω.
Pulse width limited by max. junction temperature.
Rθ is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
ꢀ
2
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IRGS/B4615DPbF
24
22
20
18
16
14
12
10
8
110
100
90
80
70
60
50
40
30
20
10
0
6
4
2
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10μs
10
100μs
1ms
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
10
100
1000
1
10
100
1000
V
(V)
V
(V)
CE
CE
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VCE = 15V
Fig. 3 - Forward SOA,
TC = 25°C; TJ ≤ 175°C
30
25
20
15
10
5
30
25
20
15
10
5
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
2
4
6
8
0
2
4
6
8
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
3
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IRGS/B4615DPbF
80
70
60
50
40
30
20
10
0
30
25
20
15
10
5
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
-40°C
25°C
175°C
0
0.0
1.0
2.0
(V)
3.0
4.0
0
2
4
6
8
V
V
(V)
F
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
20
20
18
16
14
12
10
8
18
16
14
12
10
8
I
I
I
= 4.0A
= 8.0A
= 16A
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
35
30
25
20
15
10
5
20
18
16
14
12
10
8
T
T
= 25°C
J
J
= 175°C
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
6
4
2
0
0
0
5
10
15
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
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October 25, 2013
IRGS/B4615DPbF
1000
100
10
500
450
400
350
300
250
200
150
100
50
td
OFF
t
F
E
OFF
td
ON
E
ON
t
R
0
1
0
5
10
(A)
15
20
0
5
10
(A)
15
20
I
C
I
C
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 47Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47Ω; VGE = 15V.
350
1000
100
10
300
E
OFF
250
td
OFF
200
150
100
50
E
ON
td
t
ON
R
t
F
0
0
25
50
75
100
125
0
25
50
75
100
125
R
(Ω)
R
( )
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 8A; VGE = 15V
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 8A; VGE= 15V
30
25
20
15
10
5
R
R
10 Ω
22 Ω
G =
25
20
15
10
5
G =
R
47 Ω
G =
R
100Ω
G =
0
0
0
5
10
15
20
0
25
50
75
100
125
I
(A)
F
R
(
Ω)
G
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 175°C; IF = 8.0A
TJ = 175°C
5
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IRGS/B4615DPbF
1400
1200
1000
800
600
400
200
0
25
20
15
10
5
Ω
10
16A
22Ω
Ω
47
100Ω
8.0A
4.0A
0
0
500
1000
1500
0
500
1000
di /dt (A/μs)
F
di /dt (A/μs)
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 8A; TJ = 175°C
18
16
14
12
10
8
80
500
450
400
350
300
250
200
150
100
50
70
60
50
40
30
20
10
10 Ω
22 Ω
47 Ω
100 Ω
6
4
0
0
5
10
(A)
15
20
8
10
12
14
(V)
16
18
V
GE
I
F
Fig. 22- Typ. VGE vs Short Circuit Time
Fig. 21 - Typical Diode ERR vs. IF
VCC=400V, TC =25°C
TJ = 175°C
1000
100
10
16
14
12
10
8
Cies
300V
400V
Coes
Cres
6
4
2
0
1
0
5
10
15
20
0
20
40
60
80
100
Q
, Total Gate Charge (nC)
G
V
(V)
CE
Fig. 23- Typ. Capacitance vs. VCE
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 8A, L=600μH
VGE= 0V; f = 1MHz
6
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IRGS/B4615DPbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
τι
Ri (°C/W)
(sec)
τ
J τJ
τ
τ
Cτ
0.555579 0.000216
0.590565 0.00117
0.365255 0.009076
0.02
0.01
τ
1 τ1
τ
2 τ2
3 τ3
Ci= τi/Ri
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
R1
R1
R2
R2
R3
R3
τι
Ri (°C/W)
(sec)
τ
J τJ
τ
Cτ
0.821094 0.000233
1.913817 0.001894
0.926641 0.014711
τ
τ
1 τ1
τ
2 τ2
3τ3
Ci= τi/Ri
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
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IRGS/B4615DPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
8
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October 25, 2013
IRGS/B4615DPbF
500
400
300
200
100
0
25
20
15
10
5
500
400
300
200
100
0
25
20
tr
90% ICE
15
TEST
tf
90% test
10
5% ICE
10% test current
5
5% VCE
5% VCE
0
0
EOFF Loss
0.60
E
ON Loss
-100
-5
-100
-5
12.10
-0.40
0.10
1.10
11.70
11.90
Time(μs)
Time (μs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
15
10
5
500
100
80
60
40
20
0
QRR
tRR
VCE
400
300
200
100
0
ICE
0
10%
Peak
-5
Peak
IRR
IRR
-10
-15
-20
-100
-20
-5.00
0.00
5.00
10.00
-0.05
0.05
0.15
time (μS)
time (μS)
WF.3- Typ. Reverse Recovery Waveform
@ TJ = 175°C using CT.4
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
9
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IRGS/B4615DPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 2000
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 0 = 2000
WE E K 19
Note: "P" in assembly lineposition
indicates "L ead - F ree"
AS S E MB L Y
LOT CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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October 25, 2013
IRGS/B4615DPbF
D2PakPackageOutline
Dimensions are shown in millimeters (inches)
D2PakPartMarkingInformation
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DAT E CODE
YEAR 0 = 2000
WE E K 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB L Y
LOT CODE
WEEK 02
A= ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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October 25, 2013
IRGS/B4615DPbF
D2Pak Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
3.90 (.153)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Qualification Level
D2Pak
TO-220
Moisture Sensitivity Level
RoHS Compliant
MSL1
N/A
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visithttp://www.irf.com/whoto-call/
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October 25, 2013
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