IRGSL4B60KTRL [INFINEON]
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN;
| 型号： | IRGSL4B60KTRL |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN 电动机控制 栅 晶体管 |
| 文件： | 总14页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94633A
IRGB4B60K
IRGS4B60K
IRGSL4B60K
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
IC = 6.8A, TC=100°C
tsc > 10µs, TJ=150°C
• Positive VCE (on) Temperature Coefficient.
G
• Maximum Junction Temperature rated at 175°C.
E
VCE(on) typ. = 2.1V
Benefits
• Benchmark Efficiency for Motor Control.
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
TO-262
TO-220
IRGS4B60K
IRGSL4B60K
IRGB4B60K
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Gate-to-Emitter Voltage
600
V
VCES
IC @ TC = 25°C
12
6.8
A
IC @ TC = 100°C
ICM
24
24
±20
ILM
VGE
V
Maximum Power Dissipation
63
W
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
31
Operating Junction and
-55 to +175
TJ
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
2.4
Units
RθJC
Junction-to-Case- IGBT
°C/W
Case-to-Sink, flat, greased surface
Junction-to-Ambient
0.50
–––
–––
62
Rθ
CS
RθJA
–––
40
Rθ
Junction-to-Ambient (PCB Mount, steady state)
Weight
JA
Wt
1.44
–––
g
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1
8/4/03
IRGB/S/SL4B60K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
VGE = 0V, IC = 500µA
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
3.5
—
—
—
—
—
—
—
0.28
2.1
2.5
2.6
4.5
-8.1
1.7
1.0
54
—
V
∆
∆
V(BR)CES/ TJ
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 4.0A, VGE = 15V, TJ = 25°C
IC = 4.0A, VGE = 15V, TJ = 150°C
IC = 4.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 250µA
Temperature Coeff. of Breakdown Voltage
—
V/°C
2.5
2.8
2.8
5.5
—
5,6,7
VCE(on)
Collector-to-Emitter Voltage
V
9,10,11
VGE(th)
Gate Threshold Voltage
V
mV/°C
S
9,10,11
12
∆
V
∆
GE(th)/ TJ
VCE = VGE, IC = 1mA (25°C-150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
VCE = 50V, IC = 4.0A, PW = 80µs
VGE = 0V, VCE = 600V
gfe
—
150
300
800
ICES
VGE = 0V, VCE = 600V, TJ = 150°C
Zero Gate Voltage Collector Current
µA
V
GE = 0V, VCE = 600V, TJ = 175°C
300
—
IGES
VGE = ±20V
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
IC = 4.0A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
12
1.7
6.5
73
—
23
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
VCC = 400V
VGE = 15V
—
nC
µJ
ns
CT1
—
IC = 4.0A, VCC = 400V
80
CT4
Ω
V
GE = 15V, RG = 100 , L = 2.5mH
47
53
TJ = 25°C
120
22
130
28
IC = 4.0A, VCC = 400V
VGE = 15V, RG = 100Ω, L = 2.5mH
TJ = 25°C
Rise time
18
23
CT4
td(off)
tf
Turn-Off delay time
100
66
110
80
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 4.0A, VCC = 400V
VGE = 15V, RG = 100Ω, L = 2.5mH
TJ = 150°C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
130
83
150
140
280
27
CT4
13,15
WF1,WF2
14,16
CT4
µJ
ns
220
22
IC = 4.0A, VCC = 400V
Ω
GE = 15V, RG = 100 , L = 2.5mH
V
Rise time
18
22
td(off)
tf
TJ = 150°C
Turn-Off delay time
120
79
130
89
WF1
Fall time
WF2
Cies
Coes
Cres
RBSOA
VGE = 0V
Input Capacitance
190
25
—
V
CC = 30V
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
pF
µs
22
6.2
—
f = 1.0MHz
TJ = 150°C, IC = 24A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 100Ω
FULL SQUARE
4
CT2
CT3
WF3
Ω
TJ = 150°C, Vp = 600V, RG = 100
SCSOA
Short Circuit Safe Operating Area
10
—
—
VCC=360V,VGE = +15V to 0V
Note to
are on page 16
2
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IRGB/S/SL4B60K
12
10
8
70
60
50
40
30
20
10
0
6
4
2
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10
100µs
1
1ms
10ms
0.1
DC
0.01
0
0
1
10
100
(V)
1000 10000
10
100
(V)
1000
V
CE
V
CE
Fig. 4 - Reverse Bias SOA
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
TJ = 150°C; VGE =15V
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3
IRGB/S/SL4B60K
30
30
25
20
15
10
5
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
25
20
15
10
5
0
0
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
25
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
15
10
5
0
0
2
4
6
8
10
12
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
4
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IRGB/S/SL4B60K
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 2.0A
= 4.0A
= 8.0A
I
I
I
= 2.0A
= 4.0A
= 8.0A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 8 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
20
18
16
14
12
10
8
30
25
20
15
10
5
T
= 25°C
J
I
I
I
= 2.0A
= 4.0A
= 8.0A
CE
CE
CE
T
= 150°C
J
6
4
2
0
0
0
5
10
15
20
5
10
15
20
V
, Gate-to-Source Voltage (V)
V
(V)
GS
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typ. Transfer Characteristics
TJ = 150°C
VCE = 360V; tp = 10µs
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IRGB/S/SL4B60K
350
300
1000
100
10
td
t
E
OFF
ON
250
F
200
150
100
50
td
ON
E
t
OFF
R
0
1
0
2
4
6
8
10
1
2
3
4
5
I
6
7
8
9
10
I
(A)
(A)
C
C
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V,
RG= 100Ω; VGE= 15V
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V
RG= 100Ω; VGE= 15V
350
300
250
200
150
100
50
1000
E
ON
td
OFF
100
t
F
E
OFF
td
ON
t
R
0
10
0
100
200
300
)
400
500
0
100
200
300
)
400
500
R
(
Ω
R
(
Ω
G
G
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
6
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IRGB/S/SL4B60K
1000
100
10
16
14
12
10
8
Cies
300V
400V
Coes
Cres
6
4
2
1
0
0
20
40
60
(V)
80
100
0
2
4
6
8
10
12
14
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 17 - Typical Gate Charge vs. VGE
Fig. 16- Typ. Capacitance vs. VCE
ICE = 4.0A; L = 3150µH
VGE= 0V; f = 1MHz
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
0.0429 0.000001
Cτ
τ
1τ1
τ
0.1
2 τ2
3τ3
1.3417 0.000178
1.0154 0.000627
0.02
0.01
Ci= τi/Ri
SINGLE PULSE
0.01
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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7
IRGB/S/SL4B60K
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
ICM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
8
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IRGB/S/SL4B60K
700
600
500
400
300
200
100
0
14
12
10
8
700
600
500
400
300
200
100
0
14
tf
tr
12
Vce
Ice
Vce
10
90% Ice
5% Vce
5% Ice
90% Ice
8
10% Ice
5% Vce
6
6
4
4
2
Ice
2
0
0
Eon
Eoff Loss
Loss
-100
-2
-100
-2
0.4
0.6
0.8
1
1.2
0.35
0.45
0.55
0.65
Time (uS)
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
400
350
300
250
40
35
30
25
Vce
Ice
A()
V()
200
150
100
50
20
15
10
5
EC
EC
I
V
0
0
-50
-5
30
40
50
60
70
Time (uS)
Fig. WF3- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
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9
IRGB/S/SL4B60K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1 - GATE
2 -COLLECTOR
1.15 (.045)
MIN
1
2
3
3 EMITTER
4 - COLLECTOR
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS SEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 7 = 1997
WE E K 19
AS S E MB L Y
LOT CODE
LINE C
10
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IRGB/S/SL4B60K
D2Pak Package Outline
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
F530S
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
DAT E CODE
YEAR 0 = 2000
WEE K 02
AS S E MB L Y
LOT CODE
LINE L
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11
IRGB/S/SL4B60K
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-262 Part Marking Information
EXA
MPLE:
THIS
IS AN IRL3103L
LOT CODE 178
PART NUMBER
9
INTERNATIONAL
RECTIFI
ASSEMBLED ON WW 19, 1
997
ER
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMB
LOT CODE
LY
L
INE C
12
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IRGB/S/SL4B60K
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 50Ω.
When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5.
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 8/03
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13
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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